Abstract: A clad steel plate having tensile strength (TS) of 780 MPa or more, excellent bendability, collision resistance, and LME resistance. The clad steel plate having a base metal and a cladding metal on front and back surfaces of the base metal, and the chemical composition and microstructure of the base metal and the cladding metal being appropriately controlled so that the average Vickers hardness (HVL) of the cladding metal is 260 or less, the average Vickers hardness (HVL) of the cladding metal divided by the average Vickers hardness (HVB) of the base metal is 0.80 or less, the boundary roughness between the base metal and the cladding metal is 50 ?m or less at the maximum height Ry, and the number of voids at the boundary between the base metal and the cladding metal is controlled to 20 or fewer per 10 mm length of the boundary.

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract: A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract: A composition is provided which includes a polymerizable compound (A) which includes a (meth)acryloyl group and an isocyanate group in a molecule thereof; and a reaction accelerator (B) which is a compound including a (meth)acryloyl group and a halogenated carbamoyl group in a molecule.

Abstract: A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

Abstract: A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

Abstract: A reaction accelerator is provided which is used in a reaction of a compound including an isocyanate group that is not directly bonded to an aromatic ring in a molecule with a compound including an active hydrogen-containing group and is formed of a compound including a halogenated carbamoyl group. A production method is provided which includes reacting a compound including an isocyanate group that is not directly bonded to an aromatic ring in a molecule with a compound including an active hydrogen-containing group to produce a urethane compound, a thiourethane compound, an amide compound or a urea compound, in which the reaction is performed in the presence of the reaction accelerator.

Abstract: A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

Abstract: The present invention provides an apparatus and a method for polishing a substrate having a film formed thereon. The method includes: rotating a polishing table supporting a polishing pad by a table motor; pressing the substrate against the polishing pad by a top ring; obtaining a signal containing a thickness information of the film; producing from the signal a polishing index value that varies in accordance with a thickness of the film; monitoring a torque current value of the table motor and the polishing index value; and determining a polishing end point based on a point of time when the torque current value has reached a predetermined threshold value or a point of time when a predetermined distinctive point of the polishing index value has appeared, whichever comes first.

Abstract: A polishing apparatus for polishing a substrate includes a polishing table holding a polishing pad, a top ring configured to press the substrate against the polishing pad, and first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate. The polishing apparatus also includes spectroscopes each configured to measure at each wavelength an intensity of the reflected light received, and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

Abstract: A composition is provided which includes a polymerizable compound (A) which includes a (meth)acryloyl group and an isocyanate group in a molecule thereof; and a reaction accelerator (B) which is a compound including a (meth)acryloyl group and a halogenated carbamoyl group in a molecule.

Abstract: A reaction accelerator is provided which is used in a reaction of a compound including an isocyanate group that is not directly bonded to an aromatic ring in a molecule with a compound including an active hydrogen-containing group and is formed of a compound including a halogenated carbamoyl group. A production method is provided which includes reacting a compound including an isocyanate group that is not directly bonded to an aromatic ring in a molecule with a compound including an active hydrogen-containing group to produce a urethane compound, a thiourethane compound, an amide compound or a urea compound, in which the reaction is performed in the presence of the reaction accelerator.

Abstract: A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

Abstract: A polishing method for reducing an amount of polishing liquid used without lowering a polishing rate is provided. The polishing method comprises determining, in advance, the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished without controlling a surface temperature of the polishing pad, and the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished while controlling a surface temperature of the polishing pad at a predetermined level, and continuously supplying the polishing liquid to the surface of the polishing pad to achieve a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined level, than when the substrate is polished without controlling the surface temperature of the polishing pad.

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract: An apparatus for polishing a substrate includes a rotatable polishing table supporting a polishing pad, a substrate holder configured to hold the substrate and press the substrate against a polishing surface of the polishing pad on the rotating polishing table so as to polish the substrate, and a pad-temperature detector configured to measure a temperature of the polishing surface of the polishing pad. The apparatus also includes a pad-temperature regulator configured to contact the polishing surface to regulate the temperature of the polishing surface, and a temperature controller configured to control the temperature of the polishing surface by controlling the pad-temperature regulator based on information on the temperature of the polishing surface detected by the pad-temperature detector.

Abstract: A polishing apparatus polishes a substrate having a film formed thereon. A sensor is disposed in a polishing table that supports a polishing pad thereon. The polishing apparatus is configured to perform an idling process in which polishing of the substrate on the polishing pad does not progress substantially, while rotating the polishing table and the substrate. The sensor obtains the film thickness data, which varies in accordance with a thickness of the film, while the idling process is performed. A processor calculates, from the film thickness data, a polishing index value indicating the progress of polishing of the film.

Abstract: A polishing method for reducing an amount of polishing liquid used without lowering a polishing rate is provided. The polishing method comprises determining, in advance, the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished without controlling a surface temperature of the polishing pad, and the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished while controlling a surface temperature of the polishing pad at a predetermined level, and continuously supplying the polishing liquid to the surface of the polishing pad to achieve a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined level, than when the substrate is polished without controlling the surface temperature of the polishing pad.

Abstract: A polishing method polishes a surface (surface to be polished) of a substrate at a sufficient polishing rate and obtains a desired polishing profile while preventing an unpolished portion from remaining on the surface of the substrate after polishing. The polishing method polishes a surface to be polished with a polishing pad while controlling the temperature of the polishing pad by blowing a gas toward the polishing pad. The polishing method includes monitoring the polishing state of the substrate to be polished during polishing while PID-controlling the flow rate or the blow direction of the gas, and changing the control temperature of the polishing pad when a predetermined thickness of a film to be polished is reached.