Patents by Inventor Katsuyoshi Komatsu
Katsuyoshi Komatsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11985907Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.Type: GrantFiled: March 15, 2021Date of Patent: May 14, 2024Assignee: Kioxia CorporationInventors: Shogo Itai, Tadaomi Daibou, Yuichi Ito, Katsuyoshi Komatsu
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Patent number: 11963459Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3—ZN line is B, the material has a composition satisfying X=1.2 (1?A) (0.5+B), Y=A (0.5+B), and W=1?X?Y, where ?0.06?B?0.06 is satisfied when ?>A and ¾<A, and ?0.06?B and Y?0.45 are satisfied when ??A?¾.Type: GrantFiled: September 8, 2021Date of Patent: April 16, 2024Assignee: Kioxia CorporationInventors: Hiroshi Takehira, Katsuyoshi Komatsu, Tadaomi Daibou, Hiroki Kawai, Yuichi Ito
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Publication number: 20240114811Abstract: According to one embodiment, a nonvolatile semiconductor memory includes a first electrode and a second electrode spaced from the first electrode. A memory element and a switching element are disposed between the first electrode and the second electrode. The switching element includes a tunnel insulating film enabling carrier tunneling, and the tunnel insulating film includes yttrium and oxygen and at least one of tantalum, titanium, and zirconium Ti, and Zr.Type: ApplicationFiled: September 1, 2023Publication date: April 4, 2024Inventors: Jieqiong ZHANG, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Yosuke MATSUSHIMA
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Publication number: 20240099153Abstract: A storage device includes a first conductive layer, a second conductive layer, a third conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and a switching layer disposed between the second conductive layer and the third conductive layer. The second conductive layer is disposed between the first conductive layer and the third conductive layer. The switching layer includes a first area, a second area, and a third area disposed between the first area and the second area. The first area includes a first element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The second area includes a second element selected from Sn, Ga, Zn, Ta, Ti, and In, and O or N. The third area includes a third element selected from Zr, Y, Ce, Hf, Al, Mg, and Nb, O or N, and a metal element selected from Te, Sb, Bi, Ti, and Zn.Type: ApplicationFiled: August 24, 2023Publication date: March 21, 2024Inventors: Takeshi IWASAKI, Zhu QI, Katsuyoshi KOMATSU, Jieqiong ZHANG
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Publication number: 20240099020Abstract: According to one embodiment, memory device includes a first, second, and third conductive layers in this order, a resistance change layer between the first and the second conductive layers, and a switching layer between the second and the third conductive layers. The switching layer contains: at least one first substance from a group consisting of oxide of at least one element from a group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance being at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance.Type: ApplicationFiled: June 30, 2023Publication date: March 21, 2024Applicant: Kioxia CorporationInventors: Takeshi IWASAKI, Yosuke MATSUSHIMA, Katsuyoshi KOMATSU
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Publication number: 20230301118Abstract: A semiconductor memory device includes a first wiring extending in a first direction; a second wiring extending in a second direction and spaced from the first wiring in a third direction; a stacked body disposed between the first and second wirings and including conductive layers and insulating layers alternately stacked on top of one another in the third direction; a columnar body extending through the stacked body and including: (a) an electrode disposed between the first wiring and the second wiring, (b) a memory layer disposed between the electrode and the conductive layers, and (c) a selection layer disposed between the electrode and the first wiring; and a diode disposed between the electrode and the second wiring.Type: ApplicationFiled: September 1, 2022Publication date: September 21, 2023Applicant: Kioxia CorporationInventors: Katsuyoshi KOMATSU, Hiroki TOKUHIRA, Hiroshi TAKEHIRA, Hiroyuki ODE, Jieqiong ZHANG
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Patent number: 11678593Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).Type: GrantFiled: August 12, 2021Date of Patent: June 13, 2023Assignee: Kioxia CorporationInventors: Katsuyoshi Komatsu, Takeshi Iwasaki, Tadaomi Daibou, Hiroki Kawai
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Publication number: 20230085722Abstract: A semiconductor storage device including a phase change memory film having a composition containing at least Ge, Sb, Te, and Se, and containing Se as a design composition ratio to Te in a composition ratio showing a phase change memory property with at least three elements Ge, Sb, and Te. The composition ratio of Se is 33.6 atom % or less.Type: ApplicationFiled: March 4, 2022Publication date: March 23, 2023Inventors: Jieqiong ZHANG, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Takeshi IWASAKI, Hiroki TOKUHIRA, Hiroki KAWAI, Hiroshi TAKEHIRA
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Publication number: 20230085635Abstract: A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.Type: ApplicationFiled: March 7, 2022Publication date: March 23, 2023Applicant: Kioxia CorporationInventors: Hiroki KAWAI, Kasumi YASUDA, Hiroki TOKUHIRA, Kazuhiro KATONO, Akifumi GAWASE, Katsuyoshi KOMATSU, Tadaomi DAIBOU
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Patent number: 11600772Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C1 satisfies x?(3?(3+b)×y?z)/(3+a).Type: GrantFiled: September 8, 2020Date of Patent: March 7, 2023Assignee: Kioxia CorporationInventors: Hiroki Kawai, Katsuyoshi Komatsu, Tadaomi Daibou, Hiroki Tokuhira, Masatoshi Yoshikawa, Yuichi Ito
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Publication number: 20220238801Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).Type: ApplicationFiled: August 12, 2021Publication date: July 28, 2022Applicant: Kioxia CorporationInventors: Katsuyoshi KOMATSU, Takeshi IWASAKI, Tadaomi DAIBOU, Hiroki KAWAI
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Publication number: 20220093851Abstract: A switching device according to an embodiment includes a switching layer disposed between a first electrode and a second electrode. The switching layer contains a material containing a first cation element Z, Te, and N. This material contains at least 5 atomic % or more of each of Z, Te, and N, and when an atomic ratio of Te is X, an atomic ratio of N is Y, an atomic ratio of Z is W, a ratio of Z2Te3 to ZN on a straight line connecting a compound of the first cation element Z with tellurium and nitride of the first cation element Z in a ternary phase diagram of Z, Te, and N is A, and a change in an N content from the Z2Te3-ZN line is B, the material has a composition satisfying X=1.2 (1?A) (0.5+B), Y=A (0.5+B), and W=1?X?Y, where ?0.06?B?0.06 is satisfied when ?>A and ¾<A, and ?0.06?B and Y?0.45 are satisfied when ??A?¾.Type: ApplicationFiled: September 8, 2021Publication date: March 24, 2022Applicant: Kioxia CorporationInventors: Hiroshi TAKEHIRA, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Hiroki KAWAI, Yuichi ITO
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Publication number: 20220083849Abstract: A switching circuit includes: a first circuit including a first capacitor, a first resistor, and a first selector above the first capacitor and resistor; and a second circuit including a second capacitor, a second resistor, and a second selector above the second capacitor and resistor. The capacitors have: a first and a second lower electrode on a semiconductor substrate; a dielectric layer on the lower electrodes; a resistive layer on the dielectric layer to form the resistors with the dielectric layer; a first upper electrode on the resistive layer opposite to the first lower electrode to form the first capacitor with the first lower electrode; and a second upper electrode on the resistive layer opposite to the second lower electrode to form the second capacitor with the second lower electrode.Type: ApplicationFiled: August 30, 2021Publication date: March 17, 2022Applicant: Kioxia CorporationInventors: Katsuyoshi KOMATSU, Kenichi MUROOKA, Tadaomi DAIBOU, Yuichi ITO
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Publication number: 20220085277Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element including first and second magnetic layers each having a fixed magnetization direction, a third magnetic layer provided between the first and second magnetic layers, and having a variable magnetization direction, a first nonmagnetic layer between the first and third magnetic layers, and a second nonmagnetic layer between the second and third magnetic layers, and a switching element connected in series to the magnetoresistance effect element, changing from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals is higher than or equal to a threshold voltage.Type: ApplicationFiled: March 15, 2021Publication date: March 17, 2022Applicant: Kioxia CorporationInventors: Shogo ITAI, Tadaomi DAIBOU, Yuichi ITO, Katsuyoshi KOMATSU
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Publication number: 20210296585Abstract: A switching device in an embodiment includes: a first electrode; a second electrode, and a switching layer disposed between the first electrode and the second electrode. The switching layer is made of a material containing hafnium nitride. Otherwise, the switching layer is made of a material containing bismuth and at least one selected from the group consisting of silicon oxide, aluminum oxide, zirconium oxide, and gallium oxide, or a material containing at least one selected from the group consisting of bismuth oxide, bismuth nitride, bismuth boride, and bismuth sulfide.Type: ApplicationFiled: September 14, 2020Publication date: September 23, 2021Applicant: Kioxia CorporationInventors: Tadaomi DAIBOU, Hiroki KAWAI, Katsuyoshi KOMATSU, Weidong LI, Shogo ITAI, Kouji MATSUO
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Patent number: 11081525Abstract: A storage device includes a first conductor, a second conductor, a variable resistance layer, a first portion, and a second portion. The variable resistance layer connects with the first conductor or the second conductor. The first portion is provided between the first conductor and the second conductor, and has a first threshold voltage value at which the resistance value changes. The second portion is provided between the first conductor and the first portion and/or between the second conductor and the first portion, and has a second threshold voltage value at which the resistance value changes and which is higher than the first threshold voltage value.Type: GrantFiled: August 28, 2019Date of Patent: August 3, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Takeshi Iwasaki, Katsuyoshi Komatsu, Hiroki Kawai
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Publication number: 20210202838Abstract: A resistance variable device of an embodiment includes a stack arranged between a first electrode and a second electrode and including a resistance variable layer and a chalcogen-containing layer. The chalcogen-containing layer contains a material having a composition represented by a general formula: C1xC2yAz, where C1 is at least one element selected from Sc, Y, Zr, and Hf, C2 is at least one element selected from C, Si, Ge, B, Al, Ga, and In, A is at least one element selected from S, Se, and Te, and x, y, and z are numbers representing atomic ratios satisfying 0<x<1, 0<y<1, 0<z<1, and x+y+z=1, and when an oxidation number of the element C1 is set to a, and an oxidation number of the element C2 is set to b, the atomic ratio x of the element C2 satisfies x?(3?(3+b)×y?z)/(3+a).Type: ApplicationFiled: September 8, 2020Publication date: July 1, 2021Applicant: Kioxia CorporationInventors: Hiroki KAWAI, Katsuyoshi KOMATSU, Tadaomi DAIBOU, Hiroki TOKUHIRA, Masatoshi YOSHIKAWA, Yuichi ITO
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Patent number: 10916698Abstract: A semiconductor storage device is disclosed. The device includes: a first conductive layer; a second conductive layer apart from the first conductive layer in a first direction; a variable resistance layer provided between the first conductive layer and the second conductive layer; a third conductive layer provided between the first conductive layer and the variable resistance layer; a nonlinear layer provided between the first conductive layer and the third conductive layer; and a first insulating layer provided at least between the first conductive layer and the nonlinear layer or between the third conductive layer and the nonlinear layer. The first insulating layer includes nitrogen (N) and boron (B).Type: GrantFiled: July 26, 2019Date of Patent: February 9, 2021Assignee: TOSHIBA MEMORY CORPORATIONInventors: Katsuyoshi Komatsu, Takeshi Iwasaki
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Patent number: 10892300Abstract: A storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).Type: GrantFiled: September 13, 2019Date of Patent: January 12, 2021Assignee: Toshiba Memory CorporationInventors: Takanori Usami, Takeshi Ishizaki, Ryohei Kitao, Katsuyoshi Komatsu, Takeshi Iwasaki, Atsuko Sakata
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Publication number: 20200295086Abstract: A storage device includes a first conductor, a second conductor, a variable resistance layer, a first portion, and a second portion. The variable resistance layer connects with the first conductor or the second conductor. The first portion is provided between the first conductor and the second conductor, and has a first threshold voltage value at which the resistance value changes. The second portion is provided between the first conductor and the first portion and/or between the second conductor and the first portion, and has a second threshold voltage value at which the resistance value changes and which is higher than the first threshold voltage value.Type: ApplicationFiled: August 28, 2019Publication date: September 17, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Takeshi IWASAKI, Katsuyoshi KOMATSU, Hiroki KAWAI