Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Abstract: Pedestal assemblies with a thermal barrier plate, a torque plate and at least one kinematic mount to change a plane formed by the thermal barrier plate are described. Susceptor assemblies and processing chambers incorporating the pedestal assemblies are also described. Methods of leveling a susceptor to form parallel planes between the susceptor surface and a gas distribution assembly surface are also described.

Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

Abstract: Apparatus and method for processing a plurality of substrates in a batch processing chamber are described. The apparatus comprises a susceptor assembly, a lift assembly and a rotation assembly. The susceptor assembly has a top surface and a bottom surface with a plurality of recesses in the top surface. Each of the recesses has a lift pocket in the recess bottom. The lift assembly including a lift plate having a top surface to contact the substrate. The lift plate is connected to a lift shaft that extends through the susceptor assembly and connects to a lift friction pad. The rotation assembly has a rotation friction pad that contacts the lift friction pad. The rotation friction pad is connected to a rotation shaft and can be vertically aligned with the lift friction pad.

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

Abstract: Described are apparatus and methods for processing a semiconductor wafer in which the gap between the wafer surface and the gas distribution assembly remains uniform and of known thickness. The wafer is positioned within a susceptor assembly and the assembly is lifted toward the gas distribution assembly using actuators. The wafer can be lifted toward the gas distribution assembly by creating a fluid bearing below and/or above the wafer.

Abstract: Apparatus and methods of measuring and controlling the gap between a susceptor assembly and a gas distribution assembly are described. Apparatus and methods for positional control and temperature control for wafer transfer purposes are also described.

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

Abstract: Apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing.

Abstract: Gas distribution assemblies and susceptor assemblies made up of a plurality of pie-shaped segments which can be individually leveled, moved or changed. Processing chambers comprising the gas distribution assemblies, the susceptor assemblies and sensors with feedback circuits to adjust the gap between the susceptor and gas distribution assembly are also described. Methods of using the gas distribution assemblies, susceptor assemblies and processing chambers are also described.

Abstract: Described are apparatus and methods for processing a semiconductor wafer in which the gap between the wafer surface and the gas distribution assembly remains uniform and of known thickness. The wafer is positioned within a susceptor assembly and the assembly is lifted toward the gas distribution assembly using actuators. The wafer can be lifted toward the gas distribution assembly by creating a fluid bearing below and/or above the wafer.

Abstract: Apparatus and methods for processing a semiconductor wafer including a two-axis lift-rotation motor center pedestal with vacuum capabilities. Wafers are subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer through interface with the motor assembly.

Abstract: A probe system for facilitating the inspection of a device under test. System incorporates a storage rack; a probe bar gantry assembly; a probe assembly configured to electrically mate the device under test; and a robot system for picking the probe assembly from the storage rack and deliver the probe assembly to the probe bar gantry. The robot system is also enabled to pick a probe assembly from the probe bar gantry and deliver the probe assembly to the storage rack. The probe assembly includes a clamping assembly for attaching the probe assembly to the probe bar gantry or the storage rack. The probe assembly may include an array of contact pins configured to mate with conductive pads on the device under test when the probe assembly is installed on the probe bar gantry assembly.

Abstract: A probe system for facilitating the inspection of a device under test. System incorporates a storage rack; a probe bar gantry assembly; a probe assembly configured to electrically mate the device under test; and a robot system for picking the probe assembly from the storage rack and deliver the probe assembly to the probe bar gantry. The robot system is also enabled to pick a probe assembly from the probe bar gantry and deliver the probe assembly to the storage rack. The probe assembly includes a clamping assembly for attaching the probe assembly to the probe bar gantry or the storage rack. The probe assembly may include an array of contact pins configured to mate with conductive pads on the device under test when the probe assembly is installed on the probe bar gantry assembly.

Abstract: A system performs continuous full linear scan of a flat media. The system includes, in part, a chuck, and at least first, second and third gantries. The chuck is adapted to support the flat media during the test. The first gantry includes at least one linear array of non-contacting sensors that spans the width of the flat media and is adapted to move across an entire length of the flat media. Each of the second and third gantries includes a probe head that spans the width of the flat media and each is adapted to apply an electrical signal to the flat media. Each probe head is further adapted to move along a direction substantially perpendicular to the surface of the flat media during the times when the first gantry is in motion and while test signals are being continuously applied.

Abstract: A system performs continuous full linear scan of a flat media. The system includes, in part, a chuck, and at least first, second and third gantries. The chuck is adapted to support the flat media during the test. The first gantry includes at least one linear array of non-contacting sensors that spans the width of the flat media and is adapted to move across an entire length of the flat media. Each of the second and third gantries includes a probe head that spans the width of the flat media and each is adapted to apply an electrical signal to the flat media. Each probe head is further adapted to move along a direction substantially perpendicular to the surface of the flat media during the times when the first gantry is in motion and while test signals are being continuously applied.