Abstract: Described is an apparatus which comprises: a first electrical path comprising at least one driver and receiver; and a second electrical path comprising at least one driver and receiver, wherein the first and second electrical paths are to receive a same input signal, wherein the first electrical path and the second electrical path are parallel to one another and have substantially the same propagation delays, and wherein the second electrical path is enabled during a first operation mode and disabled during a second operation mode.

Abstract: Embodiments include apparatuses, methods, and systems associated with save-restore circuitry including metal-ferroelectric-metal (MFM) devices. The save-restore circuitry may be coupled to a bit node and/or bit bar node of a pair of cross-coupled inverters to save the state of the bit node and/or bit bar node when an associated circuit block transitions to a sleep state, and restore the state of the bit node and/or bit bar node when the associated circuit block transitions from the sleep state to an active state. The save-restore circuitry may be used in a flip-flop circuit, a register file circuit, and/or another suitable type of circuit. The save-restore circuitry may include a transmission gate coupled between the bit node (or bit bar node) and an internal node, and an MFM device coupled between the internal node and a plate line. Other embodiments may be described and claimed.

Abstract: Described is an apparatus which comprises: a first electrical path comprising at least one driver and receiver; and a second electrical path comprising at least one driver and receiver, wherein the first and second electrical paths are to receive a same input signal, wherein the first electrical path and the second electrical path are parallel to one another and have substantially the same propagation delays, and wherein the second electrical path is enabled during a first operation mode and disabled during a second operation mode.

Abstract: One embodiment provides an apparatus. The apparatus includes a pair of nonvolatile resistive random access memory (RRAM) memory cells coupled to a volatile static RAM (SRAM) memory cell. The pair of nonvolatile RRAM memory cells includes a first RRAM memory cell and a second RRAM memory cell. The first RRAM memory cell includes a first resistive memory element coupled to a first bit line, and a first selector transistor coupled between the first resistive memory element and a first output node of the volatile SRAM memory cell. The second RRAM memory cell includes a second resistive memory element coupled to a second bit line, and a second selector transistor coupled between the second resistive memory element and a second output node of the volatile SRAM memory cell.

Abstract: An apparatus is provided which comprises: a select line; a select transistor coupled to a resistive memory element and to the select line; a word-line coupled to a gate terminal of the select transistor; and a current mirror operable to be coupled to the select line during a first mode and to be de-coupled during a second mode.

Abstract: Embodiments include a pattern matching circuit that implements a Bloom filter including one or more hash functions. The hash functions may generate respective addresses corresponding to bits of a memory array. Various techniques for improving the area and/or power efficiency of the pattern matching circuit are disclosed. For example, a number of logic 1 bits per column of hash matrixes associated with the one or more hash functions may be restricted to a pre-defined number. A plurality of addresses generated by the hash functions may use the same column address to correspond to bits of a same column. A single read port memory may be used to simultaneously read two bits and generate an output signal that indicates whether the two bits are both a first logic value. Other embodiments may be described and claimed.

Abstract: An apparatus is described that includes a resistive random access memory cell having a word line that is to receive a narrowed word line signal that limits an amount of time that an access transistor is on so as to limit the cell's high resistive state and/or the cell's low resistive state. Another apparatus is described that includes a resistive random access memory cell having SL and BL lines that are to receive respective signals having different voltage amplitudes to reduce source degeneration effects of the resistive random access memory cell's access transistor. Another apparatus is described that includes a resistive random access memory cell having a storage cell comprising a bottom-side OEL layer. Another apparatus is described that includes a resistive random access memory cell having a storage cell within a metal layer that resides between a pair of other metal layers where parallel SL and BL lines of the resistive random access memory cell respectively reside.

Abstract: In one aspect, a method comprises providing at least two identical front-end-of-line (FEOL) portions of an integrated circuit (IC) in a single wafer, with at least some of each FEOL portion comprising a plurality of circuit elements; building a design back-end-of-line (BEOL) portion of the IC on at least one of the FEOL portions to form a product chip, with the design BEOL portion configuring design-type interconnections of the same plurality of circuit elements for a first instantiation; building a test-only BEOL structure on at least one of the FEOL portions to form a sacrificial test device, with the test-only BEOL structure configuring test-type interconections of the same plurality of circuit elements for a second instantiation; and testing the sacrificial test device for at least one of functionality or reliability.