Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate, and the color filter includes a plurality of second micro structures disposed over the back side of the substrate.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, and a reflective grid disposed over the isolation grid on the back side of the substrate. A depth of the reflective grid is less than a depth of the isolation grid.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

Abstract: A glass for magnetic recording medium substrate is an amorphous oxide glass. In terms of mol %, SiO2 content ranges from 45 to 68%, Al2O3 from 5 to 20%, total content of SiO2 and Al2O3 60 to 80%, B2O3 from 0 to 5%, MgO from 3 to 28%, CaO from 0 to 18%, total content of BaO and SrO 0 to 2%, total content of alkali earth metal oxides from 12 to 30%, total content of alkali metal oxides from 3.5 to 15%, and at least one kind selected from the group made of Sn oxide and Ce oxide being included, a total content of Sn oxide and Ce oxide ranges from 0.05 to 2.00%, a glass transition temperature ?625° C., a Young's modulus ?83 GPa, a specific gravity ?2.85, and an average linear expansion coefficient at 100 to 300° C.?48x10-7/° C.

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells including first, second, and third unit cells. The first and second unit cells are adjacent to each other in a first direction, the second and third unit cells are adjacent to each other in a second direction transverse to the first direction. Each of the first, second, and third unit cells includes at least one first yellow filter configured to transmit a green component and a red component of incident light, and each of the first, second, and third unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, and a reflective grid disposed over the isolation grid on the back side of the substrate. A depth of the reflective grid is less than a depth of the isolation grid.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate, and the color filter includes a plurality of second micro structures disposed over the back side of the substrate.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to aligned with the isolation structure.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, and a plurality of pixel sensors arranged in an array. Each of the pixel sensors includes a photo-sensing device in the substrate, a color filter over the pixel sensor on the back side, and an optical structure over the color filter on the back side. The optical structure includes a first sidewall, and the first sidewall and a plane substantially parallel with a front surface of the substrate form an included angel greater than 0°.

Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

Abstract: The invention is aimed that the soundness (degree of deterioration) of a tunnel can be inspected according to each span. The image synthesis processing is performed to obtain the image showing both sides of the tunnel lining surface according to the each span of the tunnel lining surface, by comparing the first image photographied by the photography means, showing one side face in both side faces of the tunnel lining surface, while the photography means is fixed to the first photography position, and the second image photographied by the photography means, showing the other side face in both side faces of the tunnel lining surface, while the photography means is fixed to the second photography position, and indicating the portions forming the identical span of the tunnel lining surface.

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

Abstract: An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter.

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) package is provided. The image sensor package comprises a first integrated circuit (IC) die, a second IC die, and a fan-out structure. The first IC die comprises a pixel sensor array, and the second IC die is under and bonded to the first IC die. Further, the fan-out structure is under and bonded to the second IC die. The fan-out structure comprises a third IC die, a fan-out dielectric layer laterally adjacent to the third IC die, a through insulator via (TIV) extending through the fan-out dielectric layer, and one or more redistribution layers (RDLs) under the third IC die and the TIV. The one or more RDLs electrically couple to the third IC die and the TIV. A method for manufacturing the CIS package is also provided.

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) package is provided. The image sensor package comprises a first integrated circuit (IC) die, a second IC die, and a fan-out structure. The first IC die comprises a pixel sensor array, and the second IC die is under and bonded to the first IC die. Further, the fan-out structure is under and bonded to the second IC die. The fan-out structure comprises a third IC die, a fan-out dielectric layer laterally adjacent to the third IC die, a through insulator via (TIV) extending through the fan-out dielectric layer, and one or more redistribution layers (RDLs) under the third IC die and the TIV. The one or more RDLs electrically couple to the third IC die and the TIV. A method for manufacturing the CIS package is also provided.

Abstract: The present invention is capable of inspecting with high accuracy the shape of a road travel surface when travelling at a low speed, and even when acceleration, deceleration, or stoppages occur frequently, and generates a highly reproducible road surface longitudinal profile. A photograph is taken along the longitudinal direction of a travel path by a photography means in a light section method via a travel surface photography means (21). Corrected image information, in which a tilt in photographic image information has been corrected using inclination information, is generated on the basis of the photographic image information, the inclination information, and movement information via a road surface profile generation means (7), and thereafter the corrected image information is arranged using the movement information. Vertical motion information pertaining to the travel surface photography means is specified from image contents of overlapped regions.

Abstract: The tunnel lining surface inspection system capable of measuring the three dimensional shape of the surface of the tunnel lining surface to precisely determine whether cracking has a risk of leading to flaking, by the light section method using the photography means and the slit laser beam projecting means, mounted in the vehicle, while the vehicle is traveling in the tunnel, and the vehicle used in the system are proposed. Image processing is performed to obtain the image used for inspecting the tunnel lining surface, by using the result of the three dimensional shape measurement of one side face of the tunnel lining surface, measured while the photography means/slit laser beam projecting means arrangement means is fixed to the first measurement position, and the result of the three dimensional shape measurement of the other side face of the tunnel lining surface, measured while the photography means/slit laser beam projecting means arrangement means is fixed to the second measurement position.

Abstract: In some embodiments in accordance with the present disclosure, an image sensor is provided. The image sensor includes a substrate having a body. The body includes a first surface and a second surface opposite to the first surface. A through via is configured to extend from the first surface to the second surface. An intermediate layer is disposed over the body and configured to cover the through via. An image sensing device is disposed over the intermediate layer. In addition, a lens structure is disposed over the substrate, the intermediate layer and the image sensing device. In certain embodiments, the image sensing device is curved. In some embodiments, the image sensing device includes a semiconductor chip having a CMOS image sensing array.