Abstract: In a PLL circuit, the number of LPFs is reduced to one to reduce mounting area and pin number, and to simplify design. In one embodiment, the PLL circuit includes a variable-gain phase comparator, a mixer, an LPF, VCOs, couplers, and a control circuit to controlling the on/off operation of the VCOs. The variable-gain phase comparator is capable of varying a phase difference gain. The on/off of the operation of the VCOs is controlled by the control circuit so that one of the VCOs is turned off. The phase difference conversion gain is varied in accordance with the sensitivity of the VCOs so the number of LPFs required for the PLL circuit can be reduced to only one.

Abstract: A communication semiconductor integrated circuit device is capable of transmission in two or more different modulation modes and outputting transmission signals with less distortion. The communication semiconductor integrated circuit device comprises a gain variable amplification circuit which amplifies I-signals and Q-signals; and a mixer circuit which synthesizes the amplified I-signals and Q-signals and local oscillation signals to carry out modulation and frequency conversion. The communication semiconductor integrated circuit device is capable of transmission in two or more different modulation methods, for example, in GSM mode and EDGE mode. A low-pass filter of second or higher order is placed between the gain variable amplification circuit and the mixer circuit.

Abstract: The present invention provides a communication semiconductor integrated circuit device equipped with a high-frequency power amplifier circuit including a gain control amplifier and a bias circuit which supplies such a bias current as to linearly change the gain of the gain control amplifier, and a wireless communication system using the same. A bias current generating circuit which supplies a bias current to a linear amplifier that constitutes the communication high-frequency power amplifier circuit, comprises a plurality of variable current sources respectively different in current value and start level. These variable current sources are controlled according to an input control voltage and thereby combine their currents into a bias current. The combined bias current changes exponentially with respect to the input control voltage.

Abstract: Disclosed is a direct conversion type transmitter or transceiver circuit suitable for a mobile communication device which corresponds to broad signal output level variable width to be required by W-CDMA, which does not necessitate any high-performance low noise VCO and RF filter, capable of reducing a number of components and the cost. In the input portion of an orthogonal modulator composed of a divider, mixers, and a common load, there are provided variable attenuators. If an input signal level of the orthogonal modulator within the transmitter circuit lowers, this variable attenuator circuit is operated so as to lower the bias of the orthogonal modulator to reduce the amount of occurrence of carrier leak, and to prevent the signal during low output level and carrier leak ratio from being deteriorated.

Abstract: In a direct conversion receiver, to cancel a DC offset generated in the baseband processing block, negative feedback arrangements comprising a gain control amplifier and a low-pass filter are respectively attached to the I and Q signal branches of the baseband block following mixer outputs. The gain control amplifier in each negative feedback circuit is gain adjusted so that the product G-B of the gain G of a primary gain control amplifier and its own gain B will be constant and thereby the DC offset is cancelled. This DC offset cancellation can be applied in a continuous receiving system with no intermittent time during a receiving operation. Capacitance elements located off-chip can be reduced to those to be used only in the low-pass filters in the negative feedback circuits, whereas many off-chip capacitance elements have been required to be inserted between each stage of gain control amplifiers in conventional baseband chains.

Abstract: The present invention provides a communication semiconductor integrated circuit device equipped with a high-frequency power amplifier circuit including a gain control amplifier and a bias circuit which supplies such a bias current as to linearly change the gain of the gain control amplifier, and a wireless communication system using the same. A bias current generating circuit which supplies a bias current to a linear amplifier that constitutes the communication high-frequency power amplifier circuit, comprises a plurality of variable current sources respectively different in current value and start level. These variable current sources are controlled according to an input control voltage and thereby combine their currents into a bias current. The combined bias current changes exponentially with respect to the input control voltage.

Abstract: The dynamic range is changed by switching a current applied to an amplifying circuit to obtain the minimum ICP required to keep linearity with the number of multiplexes even when the number of multiplexes of data is changed by switching the operation current of the amplifying circuits of the transmission system and also supplying the information about number of multiplexes of data to be transmitted to the amplifying circuits of the transmission system from the baseband circuit. Thereby, the signal can be transmitted without distortion even when the number of multiplexes increases and the current of the amplifying circuit may be reduced when the number of multiplexes is small in order to reduce the current consumption in the communication semiconductor integrated circuit device which can form a wireless communication system of the code division multiplex system such as W-CDMA system.

Abstract: Disclosed here is a wireless LAN system employed for quick and accurate auto gain controlling with no work load to be applied to its baseband processing block. When the wireless LAN system gets ready to receive a signal, the gain control circuit switches between the receiving antennas alternately. The gain control circuit, when receiving a signal over a predetermined receiving sensitivity, sets gain setting value time divisional data according to the level of the received signal measured by the first measurement circuit to roughly control the gain to be set in the LNA and the gain to be set in the two programmable gain amplifiers provided in the front steps of the LPF/PGA circuits. The gain control circuit then cancels the DC offset while the second measurement circuit measures the signal level.

Abstract: As the gain control amplifiers for amplifying the reception signal, the step amplifiers are used. Two sets of these step amplifiers are provided and are then controlled to be used alternately. When switching of the gain occurs, after the gain is switched with the step amplifier not operated and offset is cancelled, the amplifier to which the reception signal is inputted is switched. Accordingly, the step amplifier can be used as the gain control amplifier for amplifying the reception signal to provide almost constant power consumption even when the gain is changed depending on the intensity of reception signal in the semiconductor integrated circuit device for communication to form a wireless communication system of dual-mode or more modes including the W-CDMA system. As a result, the operation life of battery, namely, the reception waiting period and communication period by single charging process can be expanded.

Abstract: In a PLL circuit, the number of LPFs is reduced to one to reduce mounting area and pin number, and to simplify design. In one embodiment, the PLL circuit includes a variable-gain phase comparator, a mixer, an LPF, VCOs, couplers, and a control circuit to controlling the on/off operation of the VCOs. The variable-gain phase comparator is capable of varying a phase difference gain. The on/off of the operation of the VCOs is controlled by the control circuit so that one of the VCOs is turned off. The phase difference conversion gain is varied in accordance with the sensitivity of the VCOs so the number of LPFs required for the PLL circuit can be reduced to only one.

Abstract: The present invention provides a communication semiconductor integrated circuit device equipped with a high-frequency power amplifier circuit including a gain control amplifier and a bias circuit which supplies such a bias current as to linearly change the gain of the gain control amplifier, and a wireless communication system using the same. A bias current generating circuit which supplies a bias current to a linear amplifier that constitutes the communication high-frequency power amplifier circuit, comprises a plurality of variable current sources respectively different in current value and start level. These variable current sources are controlled according to an input control voltage and thereby combine their currents into a bias current. The combined bias current changes exponentially with respect to the input control voltage.

Abstract: The disclosed invention provides a wireless communication receiver that is able to lessen the effect of noise that accompanies gain change by programmable gain amplifiers. Such noise is produced when direct conversion type programmable gain amplifiers by which gains are adjustable in steps are used for gain control of signals of CDMA or the like in which reception is not intermitted.

Abstract: A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

Abstract: A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

Abstract: A magnetic recording/reproducing apparatus equipped with an image sensor, has a camera portion having an A/D converter for converting a signal from an image sensor into a digital signal and a first digital processor for receiving an output of the A/D converter and for digitally processing thereof. A VTR portion of a helical scan type mounts at least two or more of magnetic heads for recording/reproducing a FM modulated luminance signal and a low band converted chrominance signal. A second digital processor processes a video signal of the VTR. A switching circuit is provided in a preceding stage of the A/D converter. The image sensor signal, an external video signal and a reproduced signal from the magnetic heads are exchanged. The output of the A/D converter is inputed to the second digital processor, and a sampling clock of the A/D converter is exchanged to the most appropriate clock for the respective image sensor signal, the external video signal and the reproduced signal from the magnetic heads.

Abstract: A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

Abstract: A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

Abstract: A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

Abstract: A magnetic recording/reproducing apparatus equipped with an image sensor, comprising:

Abstract: A magnetic recording/reproducing apparatus equipped with an image sensor includes a camera portion having an A/D converter for converting a signal from an image sensor into a digital signal and a first digital processor for receiving an output of said A/D converter and for digitally processing thereof. A VTR portion of a helical scan type mounts at least two or more of magnetic heads for recording/reproducing a FM modulated luminance signal and a low band converted chrominance signal. A second digital processor processes a video signal of the VTR. A switching circuit is provided in a preceding state of said A/D converter. The signal from the image sensor, an external video signal and a reproduced signal from the magnetic heads are exchanged.