Abstract: A method of etching a semiconductor wafer is provided. The method comprises the steps of: jetting a mixed gas including hydrogen fluoride and ozone onto a surface of a semiconductor wafer; monitoring the surface of the semiconductor wafer; analyzing the surface of the semiconductor wafer; and adjusting at least one of the hydrogen fluoride concentration and the ozone concentration in the mixed gas based on a result of the analysis.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.

Abstract: A method of recycling an abrasive slurry for recycling a slurry that: contains colloidal silica; and has been used in polishing semiconductor wafer(s) is provided. The method includes: adding a dispersant to the used slurry having been collected so as to prevent the used slurry from being gelled; irradiating ultrasound to the used slurry having been added with the dispersant so as to disperse a gelled portion and aggregated silica in the used slurry; and, by using a filter, removing a foreign substance contained in the used slurry having been irradiated with the ultrasound.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer using a polishing apparatus includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit. The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table in the first polishing step.

Abstract: A manufacturing method of an epitaxial silicon wafer is provided. The epitaxial silicon wafer includes: a substrate cut out from a silicon monocrystal that has been manufactured, doped with nitrogen and pulled up in accordance with Czochralski method; and an epitaxial layer formed on the substrate. The manufacturing method includes: cleaning a surface of the substrate with fluorinated acid by spraying onto the surface of the substrate fluorinated acid vaporized by a bubbling tank of a substrate cleaning apparatus; and forming an epitaxial layer on the cleaned surface of the substrate.

Abstract: A rough-polishing method for conducting a rough polishing before mirror-finish polishing on a semiconductor wafer (W) using a polishing apparatus (1) includes a first polishing step for polishing the semiconductor wafer using slurry containing colloidal silica supplied by a slurry supplying unit (4) and a second polishing step for polishing the semiconductor wafer using alkali solution provided by mixing deionized water supplied from a deionized-water supplying unit (5) and alkali concentrate solution supplied by an alkali-concentrate-solution supplying unit (6). The pH value of the alkali solution and polishing time in the second polishing step are determined based on the load current value of the polishing table (2) in the first polishing step.

Abstract: A polishing method includes a slurry adjusting step for adjusting a polishing slurry containing silica particles so that the number of silica particles having a composition ratio of Si/O of 50–60 wt %/40–50 wt %, a modulus of elasticity of 1.4×1010 Pa or higher and a particle size of 1 ?m or larger is 3000 pcs/ml or less. A semiconductor wafer is polished using the polishing slurry adjusted in the slurry adjusting step.

Abstract: A polishing method includes a slurry adjusting step for adjusting a polishing slurry containing silica particles so that the number of silica particles having a composition ratio of Si/O of 50-60 wt %/40-50 wt %, a modulus of elasticity of 1.4×1010 Pa or higher and a particle size of 1 ?m or larger is 3000 pcs/ml or less. A semiconductor wafer is polished using the polishing slurry adjusted in the slurry adjusting step.