Abstract: A smell sensor includes an ion sensor in which a sensing section provided with a sensitive film configured to change a potential in accordance with a state of a measurement target is formed on a semiconductor substrate; a substance adsorption film disposed on the sensitive film and configured to change the state with adsorption of a smell substance; and a reference electrode configured to apply a reference voltage to the substance adsorption film. The reference electrode is disposed to be separated from the sensitive film and not to overlap the sensing section when viewed in a thickness direction of the semiconductor substrate.

Abstract: A gas measuring device includes a gas chamber into which a sample gas containing a target gas is introduced, a gas detection unit configured to detect the target gas contained in the sample gas introduced into the gas chamber, an irradiation unit configured to apply polarized light to the sample gas introduced into the gas chamber using a polarizer, an optical rotation measurement unit configured to measure optical rotation between the polarized light applied from the irradiation unit to the sample gas and the polarized light that has been transmitted through the sample gas using an analyzer, and an output unit configured to output information on the target gas detected by the gas detection unit and information on the optical rotation of the polarized light detected by the optical rotation measurement unit in association with each other.

Abstract: A gas measuring device includes: a gas rectification unit configured to rectify gas to control traveling directions and traveling speeds of gas molecules based on molecular weights of the gas molecules; and a gas sensor configured to absorb the gas molecules of the gas rectified by the gas rectification unit, and to detect absorption positions and absorption amounts.

Abstract: A gas measuring device includes: a filter to which a power supply that applies a voltage or current is connected, which generates resistance heat, and which combusts a predetermined combustible gas in contact therewith; and a gas sensor configured to detect the combustible gas that has passed through the filter.

Abstract: A gas measuring device includes: a magnetic field generation unit configured to generate a magnetic field; and a gas sensor configured to detect a gas that has passed through the magnetic field generated by the magnetic field generation unit.

Abstract: The gas measurement device includes a plurality of electrodes arranged apart from each other so as to have a gap through which gas can pass, each electrode connected to a power source for applying voltage or current, and a gas sensor configured to detect gas molecules passing between the electrodes.

Abstract: The gas measurement device includes a gas sensor disposed in a gas chamber, a filter configured to control passing gas molecules to the gas chamber, and a driving unit configured to move at least a part of a member defining the gas chamber.

Abstract: The gas measurement device includes a filter having a plurality of openings, each opening being variable in size, an adjustment mechanism configured to vary size of the plurality of openings, a first gas sensor configured to detect gas molecules passing through an opening of the filter and output a first measurement value corresponding to the detected gas molecules, and a second gas sensor configured to detect the gas molecules passing through the opening of the filter, output a second measurement value corresponding to the detected gas molecules, and detect gas molecules of a gas species different from the gas molecules detected by the second gas sensor.

Abstract: The gas measurement device includes a catalyst member connected to a power source applying voltage or current, performing a reaction of a first gas and a second gas contained in a mixed gas contacted with the catalyst member to generate a third gas, and exhibiting a catalytic action in which the reaction changes in response to temperature, and a gas sensor configured to detect gas molecules contacted with the catalyst member.

Abstract: A smell sensor includes an ion sensor in which a sensing section provided with a sensitive film configured to change a potential in accordance with a state of a measurement target is formed on a semiconductor substrate; a substance adsorption film disposed on the sensitive film and configured to change the state with adsorption of a smell substance; and a reference electrode configured to apply a reference voltage to the substance adsorption film. The reference electrode is disposed to be separated from the sensitive film and not to overlap the sensing section when viewed in a thickness direction of the semiconductor substrate.

Abstract: An ion concentration distribution measurement device includes a unit detection element for outputting charges of an amount according to an ion concentration, and an integration circuit for outputting a signal value according to the amount of charges which are output from the unit detection element. The unit detection element includes a MOS transistor, an ion sensitive portion, a first capacitive portion, and a transfer switch. The integration circuit includes an amplifier, a second capacitive portion, and a reset switch.

Abstract: An ion concentration distribution measurement device includes a unit detection element for outputting charges of an amount according to an ion concentration, and an integration circuit for outputting a signal value according to the amount of charges which are output from the unit detection element. The unit detection element includes a MOS transistor, an ion sensitive portion, a first capacitive portion, and a transfer switch. The integration circuit includes an amplifier, a second capacitive portion, and a reset switch.

Abstract: Proposed is a device for detecting a chemical/physical phenomenon, in which, via a novel scheme, charges are accumulated in a charge accumulation region. An amount of charges thus accumulated reflects the potential of a sensing region and the potential corresponds to an external environment (chemical phenomenon or physical phenomenon) to be detected. A charge accumulation region 5 includes a first potential well region FD1 that is continuous with a sensing region 3, the boundary potential of the charges held in the first potential well region FD1 being made equal to the potential of the sensing region 3, whereby the potential of the sensing region 3 is made to be reflected in the amount of charges held in the first potential well region FD1.

Abstract: Provided is an ion sensor including a supporting substrate, a plurality of cells, a silicon substrate, a plurality of transistors, and an analog-digital conversion circuit. The plurality of cells, the plurality of transistors, and the analog-digital conversion circuit are provided above the supporting substrate. Each of the plurality of transistors has a corresponding gate provided on a first surface of the silicon substrate. The analog-digital conversion circuit is provided on the silicon substrate. The ion-sensing surface is provided on a second surface of the silicon substrate. The second surface is opposite to the first surface.

Abstract: An ion sensor is configured such that part of a P well on which part a sensing section is provided is different, in dopant concentration, from the other part of the P well so that electric charges are injected merely to the sensing section in a state where a voltage is applied to an N-type substrate.

Abstract: Provided is a charge-transfer-type sensor suitable for high integration while eliminating a potential barrier. A sensor provided with a semiconductor substrate 10 partitioned into a sensing region 5 in which a potential varies in corresponding fashion to a variation in the external environment, a charge input region 2 for supplying charges to the sensing region 5, an input charge control region 3 interposed between the sensing region 5 and the charge input region 2, and a charge accumulation region 7 for accumulating electric charges transported from the sensing region 5, the sensor for detecting the amount of electric charges accumulated in the charge accumulation region 7, wherein a diffusion layer 4 is formed between the input charge control region 3 and the sensing region 5 of the substrate 10, and dopants for producing charges having the same polarity as the charges supplied from the charge input region 2 are diffused in the diffusion layer 4.

Abstract: The purpose of the present invention is to measure pH of a sample with high accuracy in a pH sensor array, without the use of a glass reference electrode. Each time that a sample is measured, the potential Vrm of the sample is identified, and the identified potential Vrm is used to calculate the pH. The outputs Voi1 and Voi2 of a first element and a second element located near one another in a sensor array are represented as follows. Voi1=Si1×pHi1+Gi1×Vrm+Ci1, Voi2=Si2×pHi2+Gi2×Vrm+Ci2. Voi is the output of the element, Si and Gi are sensitivity coefficients, and Ci is a constant, these values having been derived in advance. Here, where the potential Vrm is constant, and the elements located near one another are presumed to be at equal pH (pHi1=pHi2), the potential Vrm is identified by solving a linear equation with two unknowns.

Abstract: Proposed is a device for detecting a chemical/physical phenomenon, in which, via a novel scheme, charges are accumulated in a charge accumulation region. An amount of charges thus accumulated reflects the potential of a sensing region and the potential corresponds to an external environment (chemical phenomenon or physical phenomenon) to be detected. A charge accumulation region 5 includes a first potential well region FD1 that is continuous with a sensing region 3, the boundary potential of the charges held in the first potential well region FD1 being made equal to the potential of the sensing region 3, whereby the potential of the sensing region 3 is made to be reflected in the amount of charges held in the first potential well region FD1.

Abstract: Provided is a charge-transfer-type sensor suitable for high integration while eliminating a potential barrier. A sensor provided with a semiconductor substrate 10 partitioned into a sensing region 5 in which a potential varies in corresponding fashion to a variation in the external environment, a charge input region 2 for supplying charges to the sensing region 5, an input charge control region 3 interposed between the sensing region 5 and the charge input region 2, and a charge accumulation region 7 for accumulating electric charges transported from the sensing region 5, the sensor for detecting the amount of electric charges accumulated in the charge accumulation region 7, wherein a diffusion layer 4 is formed between the input charge control region 3 and the sensing region 5 of the substrate 10, and dopants for producing charges having the same polarity as the charges supplied from the charge input region 2 are diffused in the diffusion layer 4.

Abstract: Provided are a device for detecting chemical and physical phenomenon suitable for high integration, and a method therefor. Rather than using a TG section signal to select pixels that require charge measurement, the on-off timing (the timing for moving the charge from a sensing section to an FD section) of the TG section is harmonized for all pixels, and the release or injection of the charge to the sensing section is separately controlled, whereby the charge is held only in sensing sections of pixels that require charge measurement, and the charge is emptied in sensing sections of pixels that do not require charge measurement. In this state, the TG section of all pixels can be opened at the same time, whereby the charge is transferred to the FD section from only the sensing sections holding a charge, and the charge level of the pixel is detected.