Abstract: A sensitivity of a cumulative chemical/physical phenomenon detecting apparatus is improved. Prior to transferring charges at a sensing section to a floating diffusion section, the charges remaining at the sensing section are removed from the sensing section by a potential barrier formed between the sensing section and a charge injection adjusting section.

Abstract: An object of the present invention is to provide a ferroelectric element having excellent properties, which includes a monocrystalline film of ?-Al2O3 formed as a buffer layer on a silicon substrate. The monocrystalline ?-Al2O3 film 6 is formed on the silicon substrate 4 which is the lowermost layer of an MFMIS structure 2. On the monocrystalline ?-Al2O3 film 6, there is formed an electrically conductive oxide in the form of a LaNiO3 film 8 as a lower electrode. On the LaNiO3 film 8, there is formed a PZT thin film 10 which is a ferroelectric material. ON the PZT thin film 10, there is formed a Pt film as an upper electrode.

Abstract: A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown ?-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the ?-Al2O3 single crystal film (2).

Abstract: A transverse two-wheeled vehicle has an increased turning limit value. A turning limit estimation system obtains a turning limit value and a center-of-gravity position adjustment system improves the obtained turning limit value. The turning limit estimation system obtains values for turning limit and turning stability by estimating a center-of-gravity position and a lateral acceleration. In the center-of-gravity position adjustment system, the turning limit value is increased by causing the estimated center-of-gravity position to move toward a centripetal direction. The mechanism for moving the center of gravity to is one or more of i) a vehicle body tilt mechanism, ii) a weight movement mechanism, and iii) a seat parallel movement mechanism. Accordingly, particularly a vehicle with two wheels narrowly spaced and a high center of gravity, can make a faster and smaller turn, and driving performance, stability, and security of the turning operation are improved.

Abstract: An integrated device including a sensor and the like formed on a ?-alumina layer epitaxially grown on a silicon substrate is provided at low cost. This integrated device includes: a silicon substrate; a first function area formed on a ?-alumina film epitaxially grown on a portion of the silicon substrate; a second function area formed on an area of the silicon substrate other than an area where the ?-alumina film is grown; and wiring means for connecting the first function area with the second function area.

Abstract: An electronic circuit device comprises a silicon substrate having front and rear surfaces, a semiconductor element formed on the front surface, and at least one through-hole penetrating through the front surface and the rear surface. At least one passive element is supported by the silicon substrate. At least one connecting element is disposed in the through-hole of the silicon substrate for electrically connecting the semiconductor element to the passive element.

Abstract: A method for measuring incident light employing a simple semiconductor structure provided with a single electron-capturing section corresponding to incident light, and a sensor having a spectroscopic mechanism employing the same are provided. A spectroscopic sensor includes a semiconductor substrate (1), a first diffusion layer (2) provided on the semiconductor substrate (1), a second diffusion layer (3)provided at a part of the first diffusion layer (2), and an electrode (7)film provided on the first diffusion layer (2) with an insulating film (4) provided therebetween, the electrode film (7) transmitting the incident light and being applied with a gate voltage. In the spectroscopic sensor, the gate voltage is varied, the depth (position) for capturing electrons generated in the first diffusion layer (2) by the incident light is varied so as to correspond to the gate voltage, and a current indicating the quantity of the electrons is measured.

Abstract: A sensitivity of a cumulative chemical/physical phenomenon detecting apparatus is improved. Prior to transferring charges at a sensing section to a floating diffusion section, the charges remaining at the sensing section are removed from the sensing section by a potential barrier formed between the sensing section and a charge injection adjusting section.

Abstract: In a photosensor for composing pixels of an image sensor, a wide dynamic range having self-suppression action in the sensor unit in every pixel is realized. The photosensor includes a semiconductor substrate, a first electrode film formed on the semiconductor substrate, an insulator film being between the semiconductor substrate and the first electrode film, passing an incident light and receiving a gate voltage, and a first diffusion layer adjacent to the first electrode film, in which the first electrode film and the first diffusion layer are connected by wiring.

Abstract: charge generated by the incident light is accumulated in a charge accumulation well in the semiconductor substrate immediately beneath the first electrode film when the gate voltage applied to the first electrode film is a first gate voltage, and the accumulated charge is amplified when the gate voltage is a second gate voltage.

Abstract: A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown ?-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the ?-Al2O3 single crystal film (2).

Abstract: A method for measuring incident light employing a simple semiconductor structure provided with a single electron-capturing section corresponding to incident light, and a sensor having a spectroscopic mechanism employing the same are provided. A spectroscopic sensor includes a semiconductor substrate (1), a first diffusion layer (2) provided on the semiconductor substrate (1), a second diffusion layer (3) provided at a part of the first diffusion layer (2), and an electrode film (7) provided on the first diffusion layer (2) with an insulating film (4) provided therebetween, the electrode film (7) transmitting the incident light and being applied with a gate voltage. In the spectroscopic sensor, the gate voltage is varied, the depth (position) for capturing electrons generated in the first diffusion layer (2) by the incident light is varied so as to correspond to the gate voltage, and a current indicating the quantity of the electrons is measured.

Abstract: The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.

Abstract: A highly-sensitive, pyroelectric infrared sensing method and apparatus that can detect infrared temperature with high sensitivity throughout the entire electromagnetic wave range including millimeter waves and radioactive rays. The supersensitive infrared sensor is an infrared sensor of a type that emits electrons from a surface of a ferroelectric body having no emitter. Therefore, a gate electrode is not required to be provided in the vicinity of an emitter. Accordingly, since electrons are emitted directly from a PZT thin film, which serves as a ferroelectric body, in proportion to a temperature variation caused by irradiation of an infrared ray, only provision of an anode is required. Further, designation of machining conditions of the surface of the ferroelectric body is unnecessary.

Abstract: A power generation circuit using an electromagnetic wave which does not require any additional energy is provided. Power generation is performed by utilizing the electromagnetic wave existing in a space for living.

Abstract: An electronic circuit device having a silicon substrate is provided comprising: a silicon substrate having a semiconductor element and a recess; and at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed. In the electronic circuit device, the passive element is entrenched in the recess of the silicon substrate, and the semiconductor element formed on the silicon substrate is electrically connected to the passive element.

Abstract: The surface of a semiconductor substrate (1) comprises an input diode section (2) and a floating diffusion section (3) consisting of a diffusion region reverse to the substrate in conductivity type, an input gate (6) and an output gate (7) fixed on an insulation film (5) extending from an input diode section to a floating diffusion section, a sensing section (9) consisting of an ion sensitive film fixed on the insulation film extending from the input.

Abstract: An object is to provide a highly-sensitive, pyroelectric infrared sensing method and apparatus which can detect infrared temperature with high sensitivity throughout the entire electromagnetic wave range including millimeter waves and radioactive rays.

Abstract: A detector assembly for detecting a plurality of different properties at the same location at the same time is provided by integrating onto a single semiconductor substrate a first detector unit for measuring a first property and a second detector unit for measuring a second property. The first and second detector units can share, for example, a common element, such as a sensor device that can provide electrical output signals representative of, respectively, the first property and the second property. The common element can include a diaphragm with a pyroelectric element to provide a measurement of temperature and pressure.

Abstract: Method and equipment easily visualize various physical phenomena or chemical phenomena by simultaneously taking in, accumulating, and transferring data at a plurality of points. Electric charge is injected in potential wells constructed to vary the depth in accord with the magnitude of the physical or chemical quantity, and the physical or chemical quantity is converted into electric charge according to the depth of the potential wells.