Patents by Inventor Kazuhide Ino
Kazuhide Ino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11936369Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: GrantFiled: April 25, 2023Date of Patent: March 19, 2024Assignee: ROHM CO., LTD.Inventors: Masashi Hayashiguchi, Kazuhide Ino
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Publication number: 20230268914Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: ApplicationFiled: April 25, 2023Publication date: August 24, 2023Inventors: Masashi HAYASHIGUCHI, Kazuhide INO
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Publication number: 20230268915Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: ApplicationFiled: April 25, 2023Publication date: August 24, 2023Inventors: Masashi HAYASHIGUCHI, Kazuhide INO
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Publication number: 20230261647Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: ApplicationFiled: April 25, 2023Publication date: August 17, 2023Inventors: Masashi HAYASHIGUCHI, Kazuhide INO
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Patent number: 11728801Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: GrantFiled: April 18, 2022Date of Patent: August 15, 2023Assignee: ROHM CO., LTD.Inventors: Masashi Hayashiguchi, Kazuhide Ino
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Publication number: 20220239289Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: ApplicationFiled: April 18, 2022Publication date: July 28, 2022Inventors: Masashi HAYASHIGUCHI, Kazuhide INO
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Patent number: 11336275Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: GrantFiled: October 14, 2020Date of Patent: May 17, 2022Assignee: ROHM CO., LTD.Inventors: Masashi Hayashiguchi, Kazuhide Ino
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Publication number: 20210028779Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: ApplicationFiled: October 14, 2020Publication date: January 28, 2021Inventors: Masashi HAYASHIGUCHI, Kazuhide INO
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Patent number: 10826481Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: GrantFiled: February 7, 2019Date of Patent: November 3, 2020Assignee: ROHM CO., LTD.Inventors: Masashi Hayashiguchi, Kazuhide Ino
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Publication number: 20190173461Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: ApplicationFiled: February 7, 2019Publication date: June 6, 2019Inventors: Masashi HAYASHIGUCHI, Kazuhide INO
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Patent number: 10263612Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: GrantFiled: November 18, 2014Date of Patent: April 16, 2019Assignee: ROHM CO., LTD.Inventors: Masashi Hayashiguchi, Kazuhide Ino
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Patent number: 9800239Abstract: Provided is an electronic circuit capable of preventing a switching device from breakage when a short-circuit occurs. When a gate control signal CG1 is inverted from an L level to an H level, a first switching circuit 32 selects a first input terminal a, and connects an output terminal d to the first input terminal a, whereby turning on a MOSFET 21. When a predetermined time Tx elapses after the output terminal d of the first switching circuit 32 is connected to the first input terminal a, a second switching circuit 34 selects a first input terminal e, and connects an output terminal g to the first input terminal e. Furthermore, immediately after the connection, the first switching circuit 32 selects a second input terminal b, and connects the output terminal d to the second input terminal b. Consequently, immediately after the MOSFET 21 is turned on, a gate resistor is switched from a first gate resistor 33 having a small resistance value to a second gate resistor 35 having a large resistance value.Type: GrantFiled: June 10, 2014Date of Patent: October 24, 2017Assignee: ROHM CO., LTD.Inventors: Masashi Hayashiguchi, Kazuhide Ino
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Publication number: 20160294379Abstract: A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.Type: ApplicationFiled: November 18, 2014Publication date: October 6, 2016Inventors: Masashi HAYASHIGUCHI, Kazuhide INO
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Patent number: 9461533Abstract: When an overcurrent is detected by an overcurrent detecting circuit (36), a first switch circuit (32) selects a second input terminal (b) and connects an output terminal (c) to the second input terminal (b), with the result that the output terminal (c) of the first switch circuit (32) is put into a high-impedance state. The second switch circuit (34) selects a second output terminal (f) and connects an input terminal (d) to the second output terminal (f), with the result that the input terminal (d) of the second switch circuit (34) is grounded. That is, the gate of a first MOSFET (21) is grounded via a current interrupting resistor (35).Type: GrantFiled: October 30, 2013Date of Patent: October 4, 2016Assignee: ROHM CO., LTD.Inventors: Masashi Hayashiguchi, Mineo Miura, Kazuhide Ino
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Publication number: 20160112043Abstract: Provided is an electronic circuit capable of preventing a switching device from breakage when a short-circuit occurs. When a gate control signal CG1 is inverted from an L level to an H level, a first switching circuit 32 selects a first input terminal a, and connects an output terminal d to the first input terminal a, whereby turning on a MOSFET 21. When a predetermined time Tx elapses after the output terminal d of the first switching circuit 32 is connected to the first input terminal a, a second switching circuit 34 selects a first input terminal e, and connects an output terminal g to the first input terminal e. Furthermore, immediately after the connection, the first switching circuit 32 selects a second input terminal b, and connects the output terminal d to the second input terminal b. Consequently, immediately after the MOSFET 21 is turned on, a gate resistor is switched from a first gate resistor 33 having a small resistance value to a second gate resistor 35 having a large resistance value.Type: ApplicationFiled: June 10, 2014Publication date: April 21, 2016Inventors: Masashi HAYASHIGUCHI, Kazuhide INO
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Publication number: 20150311779Abstract: When an overcurrent is detected by an overcurrent detecting circuit (36), a first switch circuit (32) selects a second input terminal (b) and connects an output terminal (c) to the second input terminal (b), with the result that the output terminal (c) of the first switch circuit (32) is put into a high-impedance state. The second switch circuit (34) selects a second output terminal (f) and connects an input terminal (d) to the second output terminal (f), with the result that the input terminal (d) of the second switch circuit (34) is grounded. That is, the gate of a first MOSFET (21) is grounded via a current interrupting resistor (35).Type: ApplicationFiled: October 30, 2013Publication date: October 29, 2015Inventors: Masashi HAYASHIGUCHI, Mineo MIURA, Kazuhide INO
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Patent number: 8741779Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).Type: GrantFiled: July 17, 2013Date of Patent: June 3, 2014Assignees: ROHM Co., Ltd.Inventors: Tadahiro Ohmi, Kazuhide Ino, Takahiro Arakawa
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Publication number: 20130302918Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).Type: ApplicationFiled: July 17, 2013Publication date: November 14, 2013Inventors: Tadahiro OHMI, Kazuhide Ino, Takahiro Arakawa
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Patent number: 8513137Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).Type: GrantFiled: September 14, 2012Date of Patent: August 20, 2013Assignees: Rohm Co., Ltd., Tadahiro OhmiInventors: Tadahiro Ohmi, Kazuhide Ino, Takahiro Arakawa
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Publication number: 20130017686Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).Type: ApplicationFiled: September 14, 2012Publication date: January 17, 2013Applicant: ROHM CO., LTD.Inventors: Tadahiro OHMI, Kazuhide INO, Takahiro ARAKAWA