Abstract: A paper sheet stacking mechanism 50 includes a stacking wheel 52, a roller 54 that is disposed outward from the stacking wheel 52 so as to be coaxially aligned with the stacking wheel 52 and that is rotatable about a shaft 53 at a greater angular velocity than that of the stacking wheel 52, and a transport unit that is configured to transport a paper sheet to the gap between two adjacent vanes 52b of the stacking wheel 52. The transport unit is located such that a discharge position is disposed outward from the outer periphery of the base 52a of the stacking wheel 52 and inward of the circular region defined by the tips of the vanes 52b of the stacking wheel 52 during the rotation of the stacking wheel 52, when viewed in the axial direction of the shaft 53 of the stacking wheel 52.

Abstract: A paper sheet stacking mechanism 50 includes a stacking wheel 52, a roller 54 that is disposed outward from the stacking wheel 52 so as to be coaxially aligned with the stacking wheel 52 and that is rotatable about a shaft 53 at a greater angular velocity than that of the stacking wheel 52, and a transport unit that is configured to transport a paper sheet to the gap between two adjacent vanes 52b of the stacking wheel 52. The transport unit is located such that a discharge position is disposed outward from the outer periphery of the base 52a of the stacking wheel 52 and inward of the circular region defined by the tips of the vanes 52b of the stacking wheel 52 during the rotation of the stacking wheel 52, when viewed in the axial direction of the shaft 53 of the stacking wheel 52.

Abstract: A paper sheet stacking mechanism 50 includes a stacking wheel 52, a roller 54 that is disposed outward from the stacking wheel 52 so as to be coaxially aligned with the stacking wheel 52 and that is rotatable about a shaft 53 at a greater angular velocity than that of the stacking wheel 52, and a transport unit that is configured to transport a paper sheet to the gap between two adjacent vanes 52b of the stacking wheel 52. The transport unit is located such that a discharge position is disposed outward from the outer periphery of the base 52a of the stacking wheel 52 and inward of the circular region defined by the tips of the vanes 52b of the stacking wheel 52 during the rotation of the stacking wheel 52, when viewed in the axial direction of the shaft 53 of the stacking wheel 52.

Abstract: A paper sheet stacking mechanism 50 includes a stacking wheel 52, a roller 54 that is disposed outward from the stacking wheel 52 so as to be coaxially aligned with the stacking wheel 52 and that is rotatable about a shaft 53 at a greater angular velocity than that of the stacking wheel 52, and a transport unit that is configured to transport a paper sheet to the gap between two adjacent vanes 52b of the stacking wheel 52. The transport unit is located such that a discharge position is disposed outward from the outer periphery of the base 52a of the stacking wheel 52 and inward of the circular region defined by the tips of the vanes 52b of the stacking wheel 52 during the rotation of the stacking wheel 52, when viewed in the axial direction of the shaft 53 of the stacking wheel 52.

Abstract: To provide a semiconductor device having improved reliability at an improved production yield. After forming an insulating film on the main surface of a semiconductor substrate as an oxide film, form a silicon nitride film on the insulating film. Then, form an element isolating trench by plasma dry etching, form an insulating film made of silicon oxide so as to fill the trench by using HDP-CVD, and remove the insulating film outside the trench by CMP, while leaving the insulating film in the trench. Then, remove the silicon nitride film, followed by removal of the insulating film by wet etching to expose the semiconductor substrate. At this time the insulating film is wet etched while applying light of 140 lux or greater to the main surface of the semiconductor substrate.

Abstract: To provide a semiconductor device having improved reliability at an improved production yield. After forming an insulating film on the main surface of a semiconductor substrate as an oxide film, form a silicon nitride film on the insulating film. Then, form an element isolating trench by plasma dry etching, form an insulating film made of silicon oxide so as to fill the trench by using HDP-CVD, and remove the insulating film outside the trench by CMP, while leaving the insulating film in the trench. Then, remove the silicon nitride film, followed by removal of the insulating film by wet etching to expose the semiconductor substrate. At this time, the insulating film is wet etched while applying light of 140 lux or greater to the main surface of the semiconductor substrate.

Abstract: In one embodiment, a method for removing a resist includes irradiating, with an UV light having a wavelength of less than about 240 nm, a structure having a resist on a pattern surface in an atmosphere having oxygen. The resist is used as a mask as it remains above the pattern after the pattern has been transferred to a magnetic recording medium surface having a magnetic film thereon, and the irradiating is performed during production of the magnetic recording medium. In another embodiment, a method for forming a magnetic recording medium includes applying a resist to a surface of a magnetic film above a substrate, curing the resist by irradiating the resist with first UV light to form a pattern, transferring the pattern to the magnetic film using the pattern, and removing the resist by irradiating using second UV light having a shorter wavelength in an atmosphere including oxygen.

Abstract: To provide a semiconductor device having improved reliability at an improved production yield. After forming an insulating film on the main surface of a semiconductor substrate as an oxide film, form a silicon nitride film on the insulating film. Then, form an element isolating trench by plasma dry etching, form an insulating film made of silicon oxide so as to fill the trench by using HDP-CVD, and remove the insulating film outside the trench by CMP, while leaving the insulating film in the trench. Then, remove the silicon nitride film, followed by removal of the insulating film by wet etching to expose the semiconductor substrate. At this time, the insulating film is wet etched while applying light of 140 lux or greater to the main surface of the semiconductor substrate.

Abstract: A radio communication terminal includes a communication unit, a channel investigating unit and a channel setting unit. The communication unit communicates using at least one channel in a first frequency band. The channel investigating unit investigates all channels in the first frequency band, detects an available channel in the all channels and outputs a detection result as available channel information. The channel setting unit receives the available channel information, determines whether or not a plurality of channels adjacent to each other in the first frequency band are available for communication based on the available channel information.

Abstract: Hydrochloric acid, sulfuric acid or an L-lysine solution having an equivalent ratio of anion/L-lysine higher than 0.95 is added to a raw material L-lysine solution having an equivalent ratio of anion/L-lysine lower than 0.68 to adjust the equivalent ratio of anion/L-lysine of the raw material solution to be in the range of 0.68 to 0.95, and the obtained L-lysine solution or a concentrate thereof is granulated and dried to obtain a dry granulated product having a high L-lysine content and showing low caking property and low hygroscopic property.

Abstract: In one embodiment, a method for removing a resist includes irradiating, with an UV light having a wavelength of less than about 240 nm, a structure having a resist on a pattern surface in an atmosphere having oxygen. The resist is used as a mask as it remains above the pattern after the pattern has been transferred to a magnetic recording medium surface having a magnetic film thereon, and the irradiating is performed during production of the magnetic recording medium. In another embodiment, a method for forming a magnetic recording medium includes applying a resist to a surface of a magnetic film above a substrate, curing the resist by irradiating the resist with first UV light to form a pattern, transferring the pattern to the magnetic film using the pattern, and removing the resist by irradiating using second UV light having a shorter wavelength in an atmosphere including oxygen.

Abstract: A drawing apparatus which can display image data about a plurality of objects including opaque objects and semitransparent objects, each having information about a depth direction, on a computer display screen.

Abstract: A radio communication terminal includes a communication unit, a channel investigating unit and a channel setting unit. The communication unit communicates using at least one channel in a first frequency band. The channel investigating unit investigates all channels in the first frequency band, detects an available channel in the all channels and outputs a detection result as available channel information. The channel setting unit receives the available channel information, determines whether or not a plurality of channels adjacent to each other in the first frequency band are available for communication based on the available channel information.

Abstract: The preset invention relates to an image forming apparatus comprising; an original loading member on which an original is loaded, image reading means for scanning the loaded original to read image information, recording material conveying unit which conveys a recording material in a direction substantially orthogonal to a direction in which the image reading means reads the image information, image forming means for forming an image on the conveyed recording material and an image forming electric board which is arranged in a space on a side of a lengthwise direction of said original relative to said recording material conveying unit.

Abstract: Hydrochloric acid, sulfuric acid or an L-lysine solution having an equivalent ratio of anion/L-lysine higher than 0.95 is added to a raw material L-lysine solution having an equivalent ratio of anion/L-lysine lower than 0.68 to adjust the equivalent ratio of anion/L-lysine of the raw material solution to be in the range of 0.68 to 0.95, and the obtained L-lysine solution or a concentrate thereof is granulated and dried to obtain a dry granulated product having a high L-lysine content and showing low caking property and low hygroscopic property.

Abstract: A method is provided for multi-pass semitransparent processing having three passes. The method provides for displaying image data about a plurality of objects including opaque objects and semitransparent objects on a computer display screen by using an updatable Z-buffer as a storage, utilizing information about a depth direction for each object. A hardware resource capable of implementing the multi-pass method is also disclosed. The hardware resource, for example, is implemented as a drawing apparatus which can display image data about a plurality of objects including opaque objects and semitransparent objects on a computer display screen, utilizing information about a depth direction for each object.

Abstract: A drawing apparatus which can display image data about a plurality of objects including opaque objects and semitransparent objects, each having information about a depth direction, on a computer display screen.

Abstract: Hydrochloric acid, sulfuric acid or an L-lysine solution having an equivalent ratio of anion/L-lysine higher than 0.95 is added to a raw material L-lysine solution having an equivalent ratio of anion/L-lysine lower than 0.68 to adjust the equivalent ratio of anion/L-lysine of the raw material solution to be in the range of 0.68 to 0.95, and the obtained L-lysine solution or a concentrate thereof is granulated and dried to obtain a dry granulated product having a high L-lysine content and showing low caking property and low hygroscopic property.