Abstract: A method for manufacturing a wiring board according to the present disclosure includes: in the following order, (a) a step of irradiating an insulating layer composed of a resin composition with active energy rays; (b) a step of adsorbing an electroless plating catalyst to the insulating layer; and (c) a step of forming a metal layer on a surface of the insulating layer by electroless plating, in which in the step (a), a modified region having a thickness of 20 nm or more in a depth direction from the surface of the insulating layer and voids communicating from the surface of the insulating layer is formed by irradiation of the active energy rays.

Abstract: A method for manufacturing a semiconductor device is disclosed. The method for manufacturing a semiconductor device includes preparing a base material, preparing a plurality of semiconductor elements each having a connection terminal, preparing a wiring board provided with a first wiring, arranging the plurality of semiconductor elements on the base material, covering the plurality of semiconductor elements on the base material with an insulating material, arranging the wiring board on at least one of the plurality of semiconductor elements so that the first wiring is connected to at least some of the connection terminals of the plurality of semiconductor elements covered with the insulating material, and forming a second wiring around the first wiring. The first wiring has finer wiring than the second wiring.

Abstract: An organic core material including a first layer having a first fiber cloth and a first resin layer formed from a first resin component and having the first fiber cloth embedded therein, and a second layer having a second fiber cloth and a second resin layer formed from a second resin component and having the second fiber cloth embedded therein. The organic core material has a laminated structure including the second layer, a plurality of the first layers, and the second layer in order, and a content percentage of the second resin component based on a mass of the second resin layer is higher than a content percentage of the first resin component based on a mass of the first resin layer.

Abstract: A method for producing a wiring board according to the present disclosure includes: (A) forming a first insulating material layer on a supporting substrate; (B) forming a first opening part in the first insulating material layer; (C) forming a seed layer on the first insulating material layer; (D) providing a resist pattern on a surface of the seed layer; (E) forming a wiring part including a pad and wiring; (F) removing the resist pattern; (G) removing the seed layer; (H) applying a first surface treatment to the surface of the pad; (I) forming a second insulating material layer; (J) forming a second opening part in the second insulating material layer; (K) applying a second surface treatment to the surface of the pad; and (L) heating the second insulating material layer to a temperature equal to or higher than the glass transition temperature of the second insulating material layer.

Abstract: An organic interposer includes: a first organic insulating layer including a groove; a first metal wire located in the groove; a barrier metal material covering the first metal wire; and a second metal wire located above the first metal wire, wherein the barrier metal material includes: a first barrier metal film interposed between the first metal wire and an inner surface of the groove; and a second barrier metal film located on the first metal wire, and wherein the second metal wire is in contact with both of the first barrier metal film and the second barrier metal film.

Abstract: An organic interposer includes: a first organic insulating layer including a groove; a first metal wire located in the groove; a barrier metal material covering the first metal wire; and a second metal wire located above the first metal wire, wherein the barrier metal material includes: a first barrier metal film interposed between the first metal wire and an inner surface of the groove; and a second barrier metal film located on the first metal wire, and wherein the second metal wire is in contact with both of the first barrier metal film and the second barrier metal film.

Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Abstract: A method for manufacturing a wiring board according to the present disclosure includes: in the following order, (a) a step of irradiating an insulating layer composed of a resin composition with active energy rays; (b) a step of adsorbing an electroless plating catalyst to the insulating layer; and (c) a step of forming a metal layer on a surface of the insulating layer by electroless plating, in which in the step (a), a modified region having a thickness of 20 nm or more in a depth direction from the surface of the insulating layer and voids communicating from the surface of the insulating layer is formed by irradiation of the active energy rays.

Abstract: A wiring board according to the present disclosure includes a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less, a metal wiring provided on the surface of the first insulating material layer, and a second insulating material layer provided to cover the metal wiring, in which the metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and a nickel content rate of the metal layer is 0.25 to 20% by mass.

Abstract: Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 ?m to 0.8 ?m, and flake-shaped micro copper particles having a maximum particle size of 1 ?m to 20 ?m, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 ?m to 20 ?m and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.

Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Abstract: An organic interposer includes: a first organic insulating layer including a groove; a first metal wire located in the groove; a barrier metal material covering the first metal wire; and a second metal wire located above the first metal wire, wherein the barrier metal material includes: a first barrier metal film interposed between the first metal wire and an inner surface of the groove; and a second barrier metal film located on the first metal wire, and wherein the second metal wire is in contact with both of the first barrier metal film and the second barrier metal film.

Abstract: There are provided an organic interposer capable of improving insulation reliability and a method for manufacturing the organic interposer. An organic interposer 10 is provided with: an organic insulating laminate 12 comprising a plurality of organic insulating layers; and a plurality of wires 13 arranged in the organic insulating laminate 12, and each of the wires 13 and each of the organic insulating layers are separated by a barrier metal film 14. The organic insulating laminate 12 may include: a first organic insulating layer 21 having a plurality of grooves 21a each having each of the wires 13 disposed therein; and a second organic insulating layer 22 laminated to the first organic insulating layer 21 in such a way as to embed the wires 13.

Abstract: Provided is a copper paste for joining including copper particles, second particles including a metal element other than copper, and a dispersion medium, in which the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 ?m or more and 0.8 ?m or less and micro copper particles having a volume-average particle diameter of 2 ?m or more and 50 ?m or less, a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles, the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.

Abstract: Provided is a copper paste for joining including copper particles, second particles including a metal element other than copper, and a dispersion medium, in which the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 ?m or more and 0.8 ?m or less and micro copper particles having a volume-average particle diameter of 2 ?m or more and 50 ?m or less, a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles, the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.

Abstract: Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 ?m to 0.8 ?m, and flake-shaped micro copper particles having a maximum particle size of 1 ?m to 20 ?m, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 ?m to 20 ?m and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.

Abstract: One aspect of the present invention relates to a resin composition comprising a curable resin and a curing agent, which is used for forming an inter-wiring layer insulating layer in contact with a copper wiring.

Abstract: Provided is a joined body including: a first member; a second member; and a sintered metal layer that joins the first member and the second member. The sintered metal layer includes a structure that is derived from flake-shaped copper particles which are oriented in approximately parallel to an interface between the first member or the second member, and the sintered metal layer, and the amount of copper contained in the sintered metal layer is 65% by volume or greater on the basis of a volume of the sintered metal layer.

Abstract: A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 ?m and less than or equal to 0.8 ?m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 ?m and less than or equal to 50 ?m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300° C., and a content of the solvent having a boiling point of higher than or equal to 300° C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.