Abstract: An apparatus and method for production simulation simulates to calculate a total number of assembly boards manufactured with time by an electronic-component-mounting apparatus which includes a component feeding section having plural component feeders for feeding various components. The apparatus and the method allow a result of the simulation to be displayed. The production simulation apparatus is linked with a host computer for generating, transmitting, receiving, and storing data. When data for mounting components on a bare board is generated, production data for providing local maximum mounting efficiency is generated through carrying out an optimization process. The simulation for manufacturing the assembly boards is carried out using the production data and a production command data.

Abstract: A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.

Abstract: When plural board blocks formed in one board undergo sequential part-mountings at plural mounting stages, particular recognition points and recognition points in the board blocks target of a downstream mounting stage are recognized at an upstream mounting stage. Relative positional data of each recognition point of the board block with respect to the particular recognition points are thus obtained at the upstream mounting stage. At the mounting stage on downstream side, only the particular recognition points are recognized thereby detecting a whole position of the board. Based on the whole position and the relative positional data, a positional deviation of the board block at the mounting stage can be detected, so that repeated recognition of the same recognition points is avoided thereby shortening a total time of position recognition.

Abstract: An apparatus and method for production simulation simulates to calculate a total number of assembly boards manufactured with time by an electronic-component-mounting apparatus which includes a component feeding section having plural component feeders for feeding various components. The apparatus and the method allow a result of the simulation to be displayed. The production simulation apparatus is linked with a host computer for generating, transmitting, receiving, and storing data. When data for mounting components on a bare board is generated, production data for providing local maximum mounting efficiency is generated through carrying out an optimization process. The simulation for manufacturing the assembly boards is carried out using the production data and a production command data.

Abstract: A high-frequency semiconductor device according to the present invention achieves improvements in degradation of noise characteristics and a reduction in gain, and an improvement in reduction in power efficiency while suppressing a concentration of a current to multifinger HBTs. In the multifinger HBTs constituting a first stage and an output stage of an amplifier 10, basic HBTs 14 that constitute the multifinger HBT 12 corresponding to the first stage, are each made up of an HBT 14a and an emitter resistor 14b connected to the corresponding emitter of the HBT 14a, whereas basic HBTs 18 that constitute the multifinger HBT 16 corresponding to the output stage, are each comprised of an HBT 18a and a base resistor 18c connected to the corresponding base of the HBT 18a. The high-frequency semiconductor device according to the present invention is useful as a high output power amplifier used in satellite communications, ground microwave communications, mobile communications, etc.

Abstract: A T-type circuit having series resistors and a parallel resistor is arranged on the outside of an amplifier, a signal is amplified in the amplifier while stabilizing the signal by using the T-type circuit functioning as a stabilizing circuit, and the amplified signal is output. In this case, values of the series resistors and the parallel resistor of the T-type circuit are determined so as to set an output load impedance obtained by seeing the output side of the high-frequency amplifier from the amplifier to a value near to or slightly lower than a value of the conjugate complex impedance of an output impedance of the amplifier. Therefore, the output signal having a high output electric power and a low distortion can be obtained in the high-frequency amplifier while keeping a gain and a noise characteristic of the high-frequency amplifier.

Abstract: A component mounter which includes a component feeder carriage; mounting head having two or more suction nozzles for picking up a component from the feeder carriage; image capturing means for taking an image of each component held by the suction nozzles; and a recognizer for recognizing each component based on image data obtained by the image capturing means according to a mounting sequence of each component. Each component is immediately and individually mounted on a mounting target after recognition. This configuration allows to eliminate wasteful standby time, thus offering efficient component mounting.

Abstract: A microwave amplifier (10) of the present invention contains such an arrangement that both an inductor (12) and a resistor (13) are loaded in a parallel manner between a source electrode of a field-effect transistor (11) and the ground. Since the inductor (12) has a stray capacitance component (B), the inductor (12) is resonated at a resonant frequency “f0”. However, since the source electrode of the field-effect transistor (11) is grounded via a resistor (13) connected in parallel to the inductor (12), even when the inductor (12) is opened due to a resonant operation, the field-effect transistor (11) is operated under normal condition. As a result, the operation of the microwave amplifier (10) is stabilized.

Abstract: When plural board blocks formed in one board undergo sequential part-mountings at plural mounting stages, particular recognition points and recognition points in the board blocks target of a downstream mounting stage are recognized at an upstream mounting stage. Relative positional data of each recognition point of the board block with respect to the particular recognition points are thus obtained at the upstream mounting stage. At the mounting stage on downstream side, only the particular recognition points are recognized thereby detecting a whole position of the board. Based on the whole position and the relative positional data, a positional deviation of the board block at the mounting stage can be detected, so that repeated recognition of the same recognition points is avoided thereby shortening a total time of position recognition.

Abstract: In a method of mounting electronic components on a surface, where an electronic component is picked up by a moving head and is mounted onto a printed circuit board, a board recognition camera moves together with a mounting head and recognizes a recognition point set on a first board block of a board which is divided into a plurality of sections. After mounting an electronic component onto the first board block, a judgement is made whether or not a recognition point exists along the travelling path of the mounting head from a mounting position to the place for the next action. When it is judged that there is a recognition point, the board recognition camera is moved to the recognition point during the travelling and causes the camera to recognize the recognition point. As a result, useless travelling of the mounting head is eliminated and a tact time is shortened.

Abstract: An epoxy resin composition of this invention is obtained by solidifying epoxy resins represented by the following general formula (1) (wherein G is glycidyl group and R.sup.1 to R.sup.8 are hydrogen atoms, halogen atoms or hydrocarbon groups with 1 to 6 carbon atoms, and n is an integer of 0 to 10) by crystallization and adding epoxy resin curing agents to the resulting solid. It shows good flow and low moisture absorption, cures with excellent heat resistance at soldering temperature and is useful for a variety of applications, in particular, for encapsulating semiconductor devices.

Abstract: A phase shifter includes first and second single pole double throw switches, a low-pass filter, and a high-pass filter. The first switch has an input terminal and first and second output terminals, and the second switch has first and second input terminals and an output terminal. The low-pass filter is interposed between the first output terminal of the first switch and the first input terminal of the second switch and includes FETs as capacitors. The high-pass filter is interposed between the second output terminal of the first switch and the second input terminal of the second switch and includes a plurality of FETs as capacitors. The input terminal of first switch and the output terminal of the second switch are an input terminal and an output terminal of the phase shifter, respectively. Each of the high-pass filter and the low-pass filter produces two different phase quantities by the on-off switching of the FETs. Therefore, four different phase quantities are obtained in the phase shifter, i.e.

Abstract: A variable attenuation microwave attenuator includes input and output terminals, a high-pass filter having an electrical length of 90.degree. and transmitting signals with frequencies higher than a cut-off frequency, a first variable resistor connected between the input terminal and an input end of the high-pass filter, and a second variable resistor connected between an output end of the high-pass filter and the output terminal, wherein input signals applied to the input terminal are attenuated by the first and second variable resistors before and after the high-pass filter. Therefore, the variable attenuator can be a lumped parameter circuit, i.e., the high-pass filter including two inductors and a capacitor, without using a transmission line as in the prior art device, so that the size of the device is significantly reduced.

Abstract: A microwave switch circuit includes a first impedance conversion circuit, one end of which is connected to an input terminal; a resonance circuit connected between an output of the first impedance conversion circuit and ground and including a parallel connection of a field effect transistor and a resonance inductor; and a second impedance conversion circuit connected between the output of the first impedance conversion circuit and an output terminal. One microwave switch circuit may be connected between an antenna terminal and a signal input terminal and another microwave switch circuit may be connected between the antenna terminal and a signal receiving terminal. The microwave switch circuit output terminal and input terminal may have an impedance of 50 .OMEGA. and the output of the first impedance conversion circuit may have an impedance lower than 50 .OMEGA.. The microwave switch circuit may include one-fourth wavelength transmission lines as the first and second impedance conversion circuits.

Abstract: A switched line phase shifter includes at least three transmission lines having different electrical lengths disposed between an input terminal and an output terminal and connectable in parallel to each other, at least three input side FET switches for connecting and disconnecting the input terminal and the input ends of the transmission lines, and at least three output side FET switches for connecting and disconnecting the output terminal and the output ends of the transmission lines. As many signal transmission paths as transmission lines are produced between the input terminal and the output terminal by controlling the input side and the output side FET switches. When one of the signal transmission paths is selected as a reference and a signal is transmitted through the remaining at least two signal transmission paths, at least two different phase shift quantities are obtained in the phase shifter.

Abstract: A distributed amplifier includes an input side circuit including a plurality of distributed constant lines connected in series between an input terminal and ground and a plurality of source-grounded FETs for switching operation having drains connected to respective junctions of the distributed constant lines, an output side circuit including a plurality of distributed constant lines connected in series between an output terminal and ground, and a plurality of source-grounded amplifier FETs having gates connected to respective junctions of the distributed constant lines of the input side circuit via capacitors and drains connected to junctions of the distributed constant lines of the output side circuit.

Abstract: A switched line type 90.degree. phase shifter includes two single pole double throw switches, a reference transmission line having an electrical length of .alpha. connected between output terminals of the first and the second single pole double throw switches, a phase difference producing transmission line having an electrical length of (90.degree.+.alpha.) at a usage frequency, connected between other output terminals of the first and the second single pole double throw switches, and a phase inverting circuit switchablely connected for serial connection to and between two parts of the reference transmission line, which two parts produce the entirety of the reference transmission line, the one terminal of the first single pole double throw switch is an input terminal of the entire terminal and one terminal of the second single pole double throw switch is an output terminal.

Abstract: A loaded line phase shifter includes a semiconductor substrate; a main transmission line one-quarter wavelength long disposed on the semiconductor substrate; loaded lines connected to opposite ends of the main line; first and second FETs with drain electrodes connected to the other ends of the loaded lines and grounded source electrodes; and a resonant circuit including a third FET and an inductor connected between the drain electrodes of said first and second FETs. A desired phase shift quantity of the phase shifter is determined by the characteristic impedance of the main line, the reactance components of the loaded lines, and the off-capacitances of the FETs. When the resonant circuit is closed in this structure, the susceptance of the loaded lines and the first and second FETs is equal to zero, resulting in a phase shift quantity equivalent to half of the phase shift quantity obtained when the resonant circuit is opened.

Abstract: A reflection phase shifter includes a 3 dB directional coupler having opposite first and second ends, a reflection circuit connected between the first and second ends of the 3 dB directional coupler, a first resonant circuit connected between a node connecting the first end of the 3 dB directional coupler and the reflection circuit and ground, and a second resonant circuit connected between a node connecting the second end of the 3 dB directional coupler and the reflection circuit and ground. Each resonant circuit comprises an FET and an inductor connected between source and drain electrodes of the FET. In this reflection phase shifter, when the resonant circuits are open, the first and second ends of the 3 dB directional coupler are connected to the reflection circuit. On other hand, when the resonant circuits are short-circuited, the first and second ends of the 3 dB directional coupler are grounded. As a result, three different phases, i.e.

Abstract: An optoelectronic integrated circuit includes a light responsive element for converting an optical signal into an electrical signal and an electronic circuit for processing the electrical signal. The light responsive element is disposed on a first surface of a substrate and includes p side electrodes and n side electrodes alternatingly arranged parallel to each other. The electronic circuit is disposed on a second surface of the substrate. The light responsive element is electrically connected to the electronic circuit by a via hole penetrating the substrate. In this structure, light incident on the first surface is almost completely absorbed by the substrate and hardly reaches the electronic circuit on the second surface. Therefore, variations in operation of the electronic circuit, such as an increase in drain current, are reduced.