Abstract: A polymerization apparatus for performing anionic polymerization includes: a raw material container that contains a raw material; a reaction container that is connected to the raw material container via a raw material supply pipe and causes anionic polymerization of the raw material supplied; and a switching valve that is provided in the raw material supply pipe and opens and closes the raw material supply pipe, and the raw material supply pipe includes a joint portion sealed by using a metal gasket, and the switching valve is a gas valve.

Abstract: Provided is a polymer material for self-assembly, a self-assembled film, a method for producing a self-assembled film, a pattern, and a method for forming a pattern all of which are capable of reducing defects based on faulty microscopic phase separation sites and capable of forming a fine, minute pattern. The polymer material for self-assembly of the present invention contains a multi-block copolymer of a triblock copolymer or more containing a first polymer block containing a structural unit having a specific structure and a second polymer block containing a structural unit having a specific structure. The first polymer block and the second polymer block are coupled with each other.

Abstract: A polymer material for self-assembly of the present invention includes a multi-block copolymer containing a first polymer block with a structural unit having a specific structure as a main component and a second polymer block with a structural unit having a specific structure as a main component that are coupled with each other.

Abstract: The present invention includes a first raw material feeding unit, a second raw material feeding unit, a reactor unit, and a controller configured to control the amount of a first raw material being fed from the first raw material feeding unit to the reactor unit, the amount of a second raw material being fed from the second raw material feeding unit to the reactor unit, the temperature of the first raw material being fed from the first raw material feeding unit to the reactor unit, and the temperature of the second raw material being fed from the second raw material feeding unit to the reactor unit. The first raw material is raw material monomer solution containing a raw material monomer. The second raw material is polymerization initiator solution containing a polymerization initiator. A reaction product is polymer compound resulting from a living anionic polymerization reaction of the raw material monomer.

Abstract: Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.

Abstract: A silicone resin composition is provided comprising a silicon base polymer obtained from dehydration reaction of a silicon base monomer comprising at least 70 mol % of a hydrolyzable silane compound (A). The hydrolyzable silane compound (A) has at least a pair of silicon atoms linked by a linking group which is an aliphatic hydrocarbon group or an aromatic ring-containing hydrocarbon group, and having attached thereto at least three substituent groups selected from hydrogen, hydroxyl and hydrolyzable groups. A proportion of aromatic structure-containing substituent groups is up to 30 mol % of the entire silicon-bonded substituent groups. The composition is suited to form an optical material.

Abstract: Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.

Abstract: Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.

Abstract: Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere.

Abstract: A silicone resin composition is provided comprising a silicon base polymer obtained from dehydration reaction of a silicon base monomer comprising at least 70 mol % of a hydrolyzable silane compound (A). The hydrolyzable silane compound (A) has at least a pair of silicon atoms linked by a linking group which is an aliphatic hydrocarbon group or an aromatic ring-containing hydrocarbon group, and having attached thereto at least three substituent groups selected from hydrogen, hydroxyl and hydrolyzable groups. A proportion of aromatic structure-containing substituent groups is up to 30 mol % of the entire silicon-bonded substituent groups. The composition is suited to form an optical material.

Abstract: An object is to provide a highly pure aminosilane having a reduced amount of halogen impurity, which is suitable for applications of electronic materials and others. More specifically, provided is a method for preparing a purified aminosilane comprising at least the steps of treating, with an alkyl metal reagent, an aminosilane having a Si—N bond but not a Si-halogen bond and having halogen impurity content of 1 ppm (w/w) or more; and distilling the treated aminosilane.

Abstract: Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere.

Abstract: Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.

Abstract: Disclosed is a producing method of a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.

Abstract: Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product.

Abstract: An organometallic compound vaporizing and feeding system includes a carrier gas feed passageway connecting a carrier gas source to a container containing an organometallic compound MO and having a carrier gas mass flow controller, an MO gas passageway connecting the container to an in-line monitor for transporting the MO gas, a sample gas passageway connecting the in-line monitor to a sample inlet of an ICP spectrometer, a standard gas passageway connecting a gas cylinder filled with a calibration standard gas to the sample gas passageway and having a standard gas mass flow controller, and a diluent gas passageway connected to the standard gas passageway for passing a diluent gas for adjusting the concentration of the standard gas and having a diluent gas mass flow controller.

Abstract: A chemical amplification positive resist composition comprising a polymeric mixture of a polyhydroxystyrene derivative having a Mw of 1000-500,000 and a copolymer of hydroxystyrene and (meth)acrylate having a Mw of 1000-500,000, as a base resin, has improved dry etching resistance, high sensitivity, high resolution, and process adaptability, and is suppressed in the slimming of pattern films after development with aqueous base.

Abstract: A liquid organometallic compound vaporizing and feeding system includes a container containing a liquid organometallic compound MO, a vaporizer for vaporizing MO, a liquid passageway connecting the container to the vaporizer and having a liquid MO mass flow controller, a carrier gas source, a carrier gas passageway connecting the source to the vaporizer and having a carrier gas mass flow controller, a sample gas passageway connecting the vaporizer to an ICP emission spectrometer and having an in-line monitor, a calibration standard gas cylinder, and a standard gas passageway connecting the cylinder to the sample gas passageway downstream of the in-line monitor and having a standard gas mass flow controller.

Abstract: An organometallic compound vaporizing and feeding system includes a carrier gas feed passageway connecting a carrier gas source to a container containing an organometallic compound MO and having a carrier gas mass flow controller, an MO gas passageway connecting the container to an in-line monitor for transporting the MO gas, a sample gas passageway connecting the in-line monitor to a sample inlet of an ICP spectrometer, a standard gas passageway connecting a gas cylinder filled with a calibration standard gas to the sample gas passageway and having a standard gas mass flow controller, and a diluent gas passageway connected to the standard gas passageway for passing a diluent gas for adjusting the concentration of the standard gas and having a diluent gas mass flow controller.

Abstract: A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.