Patents by Inventor Kazuhiro Katayama
Kazuhiro Katayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8198016Abstract: The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid. A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.Type: GrantFiled: May 4, 2009Date of Patent: June 12, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Tsutomu Ogihara, Mutsuo Nakashima, Kazuhiro Katayama
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Patent number: 8192921Abstract: A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.Type: GrantFiled: January 13, 2010Date of Patent: June 5, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takao Yoshihara, Kazuhiro Katayama
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Publication number: 20120058428Abstract: A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator having both a 9-fluorenylmethyloxycarbonyl-substituted amino group and a carboxyl group onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising an alcohol and an optional ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.Type: ApplicationFiled: September 2, 2011Publication date: March 8, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kazuhiro Katayama
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Patent number: 8129099Abstract: Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.Type: GrantFiled: February 13, 2009Date of Patent: March 6, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Katsuya Takemura, Jun Hatakeyama, Tsunehiro Nishi, Kazuhiro Katayama, Toshinobu Ishihara
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Patent number: 8105760Abstract: A pattern is formed by applying a first positive resist composition comprising a polymer comprising recurring units which become alkali soluble under the action of acid onto a substrate to form a first resist coating, heat treating, exposing, heat treating, developing to form a first resist pattern, applying a pattern surface coating composition comprising a hydroxyl-containing crosslinkable polymer onto the first resist pattern and crosslinking, thereby covering the first resist pattern with a crosslinked polymer film, applying a second positive resist composition thereon, heat treating, exposing, heat treating, and developing to form a second resist pattern.Type: GrantFiled: August 21, 2008Date of Patent: January 31, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takeru Watanabe, Katsuhiro Kobayashi, Kazuhiro Katayama
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Patent number: 8101341Abstract: A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, forming a space pattern, and shrinking the space pattern.Type: GrantFiled: January 13, 2010Date of Patent: January 24, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Kazuhiro Katayama
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Publication number: 20120009527Abstract: A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group and recurring units having an acid labile group-substituted carboxyl group, an acid generator, and an organic solvent onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, PEB, and developing the exposed film two times with an organic solvent and an alkaline aqueous solution. Due to the two developments, one line is divided into two lines, achieving a resolution doubling the mask pattern.Type: ApplicationFiled: July 6, 2011Publication date: January 12, 2012Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kazuhiro Katayama, Koji Hasegawa
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Patent number: 8057982Abstract: A pattern is formed by applying a positive resist composition comprising a polymer comprising hydroxyalkylnaphthalene-bearing recurring units and acid labile group-bearing recurring units onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer to form a first pattern, and causing the resist film to crosslink and cure with the aid of heat or of acid and heat. A second pattern is then formed in the space area of the first pattern. The double patterning process reduces the pitch between patterns to one half.Type: GrantFiled: March 5, 2009Date of Patent: November 15, 2011Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Jun Hatakeyama, Takeshi Kinsho, Masaki Ohashi, Kazuhiro Katayama
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Publication number: 20110091812Abstract: The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.Type: ApplicationFiled: October 15, 2010Publication date: April 21, 2011Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Masaki Ohashi, Youichi Ohsawa, Kazuhiro Katayama
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Publication number: 20110033803Abstract: A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.Type: ApplicationFiled: August 3, 2010Publication date: February 10, 2011Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kazuhiro Katayama, Youichi Ohsawa, Masaki Ohashi
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Publication number: 20100304297Abstract: A pattern is formed by coating a first positive resist composition comprising a base resin, a photoacid generator, and a base generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for causing the base generator to generate a base for inactivating the pattern to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.Type: ApplicationFiled: May 26, 2010Publication date: December 2, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun HATAKEYAMA, Kazuhiro KATAYAMA, Youichi OHSAWA, Masaki OHASHI
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Publication number: 20100297554Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.Type: ApplicationFiled: May 25, 2010Publication date: November 25, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru Watanabe, Masashi Iio, Kazuhiro Katayama, Jun Hatakeyama, Tsunehiro Nishi, Takeshi Kinsho
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Publication number: 20100297563Abstract: A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.Type: ApplicationFiled: May 24, 2010Publication date: November 25, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Takeru Watanabe, Kazuhiro Katayama, Masashi Iio, Jun Hatakeyama, Tsunehiro Nishi, Takeshi Kinsho
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Publication number: 20100178617Abstract: A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, forming a space pattern, and shrinking the space pattern.Type: ApplicationFiled: January 13, 2010Publication date: July 15, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kazuhiro Katayama
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Publication number: 20100178618Abstract: A pattern is formed by coating a chemically amplified positive resist composition comprising a resin comprising acid labile group-containing recurring units and a photoacid generator onto a substrate, drying to form a resist film, exposing the resist film to high-energy radiation through a phase shift mask having a lattice-like array of shifters, PEB, developing to form a positive pattern, illuminating or heating the positive pattern to eliminate acid labile groups for increasing alkaline solubility and to induce crosslinking for imparting solvent resistance, coating a reversal film, and dissolving away the positive pattern in an alkaline wet etchant to form a pattern by way of positive/negative reversal.Type: ApplicationFiled: January 13, 2010Publication date: July 15, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Takao Yoshihara, Kazuhiro Katayama
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Publication number: 20100159404Abstract: A pattern is formed by applying a first positive resist composition onto a substrate, heat treatment, exposure, heat treatment and development to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation of high-energy radiation of 200-320 nm wavelength; further applying a second positive resist composition onto the substrate, heat treatment, exposure, heat treatment and development to form a second resist pattern. The double patterning process reduces the pitch between patterns to one half.Type: ApplicationFiled: December 8, 2009Publication date: June 24, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kazuhiro Katayama
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Publication number: 20100159392Abstract: A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units and acid labile group-containing recurring units onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, applying an amine or oxazoline compound to the first resist pattern for inactivation, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.Type: ApplicationFiled: December 16, 2009Publication date: June 24, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Takeru Watanabe, Masashi Iio, Kazuhiro Katayama
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Publication number: 20100055621Abstract: There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.Type: ApplicationFiled: July 27, 2009Publication date: March 4, 2010Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Kazuhiro Katayama, Yoshio Kawai
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Publication number: 20090286188Abstract: The present invention provides a patterning process, in which a resistance with regard to an organic solvent used for a composition for formation of a reverse film is rendered to a positive pattern to the degree of necessity and yet solubility into an alkaline etching liquid is secured, thereby enabling to finally obtain a negative image by a positive-negative reversal by performing a wet etching using an alkaline etching liquid. A resist patterning process of the present invention using a positive-negative reversal comprises at least a step of forming a resist film by applying a positive resist composition; a step of obtaining a positive pattern by exposing and developing the resist film; a step of crosslinking the positive resist pattern thus obtained; a step of forming a reverse film; and a step of reversing the positive pattern to a negative pattern by dissolving into an alkaline wet-etching liquid for removal.Type: ApplicationFiled: May 4, 2009Publication date: November 19, 2009Applicant: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Tsutomu Ogihara, Mutsuo Nakashima, Kazuhiro Katayama
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Publication number: 20090239936Abstract: A Ras, Raf, MEK, ERK or RSK inhibitor, namely a P-glycoprotein expression inhibitor or a BCRP expression inhibitor, can be screened by utilizing the MAPK signaling activity as an indicator. It becomes possible to provide an anticancer agent which is reduced in resistance acquisition, and also provide an agent for preventing the resistance against an anticancer agent, which can enhance the therapeutic effect of the anticancer agent against cancer.Type: ApplicationFiled: May 9, 2007Publication date: September 24, 2009Inventors: Yoshikazu Sugimoto, Kazuhiro Katayama