Abstract: An information processing apparatus includes: an interrupting unit that, in case where image formation based on 2D image data is commanded during execution of 3D modeling based on slice data generated by slicing 3D data, suspends output of image formation data for formation of slice images on respective recording media by an image forming apparatus and output of control data that allow a post-processing apparatus to perform, without delay, post-processing of the 3D modeling on the recording media on which slice images have been formed by the image forming apparatus; a changing unit that changes order of execution of formation of remaining slice images of the 3D modeling, a remaining part of the post-processing of the 3D modeling, and image formation based on the 2D image data, according to a prescribed condition; and an output unit as defined herein.

Abstract: An information processing apparatus includes: a first output unit that, when an instruction to perform image formation based on 2D image data is received, generates first image formation information for formation of images on respective recording media based on the 2D image data and outputs the generated first image formation information to an image forming apparatus; a second output unit that, when an instruction to perform 3D modeling based on 3D data is received, generates plural slice data by slicing the 3D data by plural respective planes, generates second image formation information for formation of a series of slice images on respective recording media based on the plural generated slice data, and outputs the generated second image formation information to the image forming apparatus; a generation unit that generates a series of control data as defined herein; and a storing unit as defined herein.

Abstract: An information processing apparatus includes a setting unit that sets, as an attribute to be used for manufacture of a 3D modeled object, an attribute of a 2D image to be used for forming the 2D image on a recording medium, when the 3D modeled object is manufactured by laminating recording media together.

Abstract: An image processing device includes a memory and a generating and outputting unit. The memory stores a template defining settings of printing to be performed by an image forming unit. If an instructing operation of instructing to perform test printing with the template is performed on a screen displaying the template, the generating and outputting unit generates and outputs instruction data for instructing the image forming unit to perform the test printing reflecting the settings of the template.

Abstract: An image processing device includes a memory and a generating and outputting unit. The memory stores a template defining settings of printing to be performed by an image forming unit. If an instructing operation of instructing to perform test printing with the template is performed on a screen displaying the template, the generating and outputting unit generates and outputs instruction data for instructing the image forming unit to perform the test printing reflecting the settings of the template.

Abstract: An image processing apparatus includes a processing unit, a storing unit, a detecting unit, and a controller. The processing unit processes a processing target of image processing in accordance with image processing setting for the processing target and an image processing program. The storing unit stores at least one occurrence condition for a failure at the processing unit. The detecting unit detects, in accordance with a detection program, whether or not the processing target or the setting satisfies the occurrence condition for the failure. The controller performs control for presenting information for avoiding the failure or control for avoiding the failure when the detecting unit detects that the occurrence condition for the failure is satisfied.

Abstract: Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlxGa1-xN layer (0<x?0.25), an AlyGa1-yN layer (0?y?x), and a GaN layer. The AlyGa1-yN layer is interposed between the AlxGa1-xN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlxGa1-xN layer. The value of y decreases from the interface with the AlxGa1-xN layer f toward the interface with the GaN layer. The AlxGa1-xN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.

Abstract: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH3 gas is fed onto the nucleation layer. This turns the surface of the nucleation layer into a group-V element and then forms a group-III-V compound layer of AlN. Then, a mixed gas of TMAl gas and NH3 gas is fed onto the group-III-V compound layer so as to form another group-III-V compound layer. Finally, a group-III nitride semiconductor layer is crystal-grown on the group-III compound layer.

Abstract: An image forming apparatus includes a detection unit and a control unit. The detection unit detects an abnormality of imposition printing. The control unit performs in response to the abnormality influencing a finish region in imposition printing in an imposition layout, the imposition printing in another imposition layout in which the abnormality does not influence the finish region.

Abstract: There are provided a positive electrode active material for an alkaline storage battery, a positive electrode for an alkaline storage battery, and an alkaline storage battery each of which has an excellent output characteristics and also has an excellent self-discharge characteristic and an excellent cycle lifetime characteristic. The positive electrode active material for an alkaline storage battery according to the present invention has nickel hydroxide particles each containing at least magnesium in a solid solution state and a cobalt compound layer coating the surface of each of the nickel hydroxide particles. Among them, the cobalt compound layer contains cobalt having an average valence of not less than 2.6 and not more than 3.0 and also contains sodium at a proportion of less than 0.10 wt % to the total weight of the cobalt compound layer. The positive electrode active material for an alkaline storage battery according to the present invention has a conductivity smaller than 1.

Abstract: A device for reducing CO2 by light, including: a cathode chamber holding a first electrolyte solution that contains CO2; an anode chamber holding a second electrolyte solution; a proton conducting membrane disposed in a connecting portion between these chambers; a cathode electrode; and an anode electrode. The cathode electrode has a CO2 reduction reaction region composed of a metal or a metal compound, and the anode electrode has a photochemical reaction region composed of nitride semiconductors. The photochemical reaction region of the anode electrode has a multilayer structure of a GaN layer and an AlxGa1-xN layer containing Mg (0<x?0.25). The content of Mg in the AlxGa1-xN layer is 1×1015 or more and 1×1019 or less in terms of the number of Mg atom per cm3. The anode electrode is disposed in such a manner that the AlxGa1-xN layer can be exposed to light.

Abstract: Disclosed is a nonaqueous secondary battery (100) comprising a positive electrode (155) having a positive current collector (151) made of a metal, and a positive electrode active material (153) composed of a lithium-metal complex oxide. The surface of the positive electrode active material (153) is coated with a lithium salt (158) having an average thickness of 20-50 nm.

Abstract: Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlxGa1-xN layer (0<x?0.25), an AlyGa1-yN layer (0?y?x), and a GaN layer. The AlyGa1-yN layer is interposed between the AlxGa1-xN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlxGa1-xN layer. The value of y decreases from the interface with the AlxGa1-xN layer f toward the interface with the GaN layer. The AlxGa1-xN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.

Abstract: A method for reducing carbon dioxide utilizes a carbon dioxide reduction device including a cathode chamber, an anode chamber, a solid electrolyte membrane, a cathode electrode and anode electrode. The cathode electrode includes copper or copper compound. The anode electrode includes a region formed of a nitride semiconductor layer where an AlxGa1-xN (0<x?1) layer and a GaN layer are stacked. The anode electrode is irradiated with a light having a wavelength of not more than 350 nanometers to reduce the carbon dioxide on the cathode electrode.

Abstract: A method for reducing carbon dioxide utilizes a carbon dioxide reduction device including a cathode chamber, an anode chamber, a solid electrolyte membrane, a cathode electrode and anode electrode. The cathode electrode includes indium or indium compound. The anode electrode includes a region formed of a nitride semiconductor layer where an AlxGa1-xN (0<x?1) layer and a GaN layer are stacked. The anode electrode is irradiated with a light having a wavelength of not more than 350 nanometers to reduce the carbon dioxide on the cathode electrode.

Abstract: An image processing apparatus includes plural page description language processing units and a job management unit. Each of the page description language processing units corresponds to one of different page description languages. The job management unit performs management to select one of the page description language processing units, the selected page description language processing unit serving as a currently processing page description language processing unit, and to cause only the currently processing page description language processing unit to process a print job. Each of the page description language processing units includes a raster image creating unit and a raster image transferring unit. The job management unit includes a first queue, a second queue, a reception-time adding unit, an image-creation-time adding unit, a first instruction unit, a second instruction unit, a third instruction unit, a controller, and a job-being-processed list memory.

Abstract: An image processing apparatus includes plural page description language processing units and a job management unit. Each of the page description language processing units corresponds to one of different page description languages. The job management unit performs management to select one of the page description language processing units, the selected page description language processing unit serving as a currently processing page description language processing unit, and to cause only the currently processing page description language processing unit to process a print job. Each of the page description language processing units includes a raster image creating unit and a raster image transferring unit. The job management unit includes a first queue, a second queue, a reception-time adding unit, an image-creation-time adding unit, a first instruction unit, a second instruction unit, a third instruction unit, a controller, and a job-being-processed list memory.

Abstract: There are provided a positive electrode active material for an alkaline storage battery, a positive electrode for an alkaline storage battery, and an alkaline storage battery each of which has an excellent output characteristics and also has an excellent self-discharge characteristic and an excellent cycle lifetime characteristic. The positive electrode active material for an alkaline storage battery according to the present invention has nickel hydroxide particles each containing at least magnesium in a solid solution state and a cobalt compound layer coating the surface of each of the nickel hydroxide particles. Among them, the cobalt compound layer contains cobalt having an average valence of not less than 2.6 and not more than 3.0 and also contains sodium at a proportion of less than 0.10 wt % to the total weight of the cobalt compound layer. The positive electrode active material for an alkaline storage battery according to the present invention has a conductivity smaller than 1.

Abstract: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH3 gas is fed onto the nucleation layer. This turns the surface of the nucleation layer into a group-V element and then forms a group-III-V compound layer of AlN. Then, a mixed gas of TMAl gas and NH3 gas is fed onto the group-III-V compound layer so as to form another group-III-V compound layer. Finally, a group-III nitride semiconductor layer is crystal-grown on the group-III compound layer.

Abstract: A battery is adapted such that a nickel hydroxide particle group constituted of a number of nickel hydroxide particles filled in a void part of a positive electrode substrate contains, at a ratio of 15 wt % or less, small-diameter nickel hydroxide particles each having a particle diameter of 5 ?m or less. The positive electrode substrate is configured such that a front-surface-side nickel layer and a back-surface-side nickel layer are made larger in thickness than a middle nickel layer, and an average thickness B of either the front-surface-side nickel layer or the back-surface-side nickel layer, which is thicker one, and an average thickness C of the middle nickel layer satisfy a relation of C/B?0.6.