Patents by Inventor Kazuhiro Ohkawa

Kazuhiro Ohkawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10025543
    Abstract: An image processing device includes a memory and a generating and outputting unit. The memory stores a template defining settings of printing to be performed by an image forming unit. If an instructing operation of instructing to perform test printing with the template is performed on a screen displaying the template, the generating and outputting unit generates and outputs instruction data for instructing the image forming unit to perform the test printing reflecting the settings of the template.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: July 17, 2018
    Assignee: FUJI XEROX CO., LTD.
    Inventor: Kazuhiro Ohkawa
  • Publication number: 20170371604
    Abstract: An image processing device includes a memory and a generating and outputting unit. The memory stores a template defining settings of printing to be performed by an image forming unit. If an instructing operation of instructing to perform test printing with the template is performed on a screen displaying the template, the generating and outputting unit generates and outputs instruction data for instructing the image forming unit to perform the test printing reflecting the settings of the template.
    Type: Application
    Filed: November 18, 2016
    Publication date: December 28, 2017
    Applicant: FUJI XEROX CO., LTD.
    Inventor: Kazuhiro OHKAWA
  • Publication number: 20170094105
    Abstract: An image processing apparatus includes a processing unit, a storing unit, a detecting unit, and a controller. The processing unit processes a processing target of image processing in accordance with image processing setting for the processing target and an image processing program. The storing unit stores at least one occurrence condition for a failure at the processing unit. The detecting unit detects, in accordance with a detection program, whether or not the processing target or the setting satisfies the occurrence condition for the failure. The controller performs control for presenting information for avoiding the failure or control for avoiding the failure when the detecting unit detects that the occurrence condition for the failure is satisfied.
    Type: Application
    Filed: February 12, 2016
    Publication date: March 30, 2017
    Applicant: FUJI XEROX CO., LTD.
    Inventor: Kazuhiro OHKAWA
  • Patent number: 9551077
    Abstract: Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlxGa1-xN layer (0<x?0.25), an AlyGa1-yN layer (0?y?x), and a GaN layer. The AlyGa1-yN layer is interposed between the AlxGa1-xN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlxGa1-xN layer. The value of y decreases from the interface with the AlxGa1-xN layer f toward the interface with the GaN layer. The AlxGa1-xN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: January 24, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Masahiro Deguchi, Satoshi Yotsuhashi, Reiko Taniguchi, Hiroshi Hashiba, Yuka Yamada, Kazuhiro Ohkawa
  • Patent number: 9373687
    Abstract: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH3 gas is fed onto the nucleation layer. This turns the surface of the nucleation layer into a group-V element and then forms a group-III-V compound layer of AlN. Then, a mixed gas of TMAl gas and NH3 gas is fed onto the group-III-V compound layer so as to form another group-III-V compound layer. Finally, a group-III nitride semiconductor layer is crystal-grown on the group-III compound layer.
    Type: Grant
    Filed: November 19, 2012
    Date of Patent: June 21, 2016
    Assignees: KOITO MANUFACTURING CO., LTD., TOKYO UNIVERSITY OF SCIENCE
    Inventors: Akihiro Nomura, Kazuhiro Ohkawa, Akira Hirako
  • Publication number: 20160086070
    Abstract: An image forming apparatus includes a detection unit and a control unit. The detection unit detects an abnormality of imposition printing. The control unit performs in response to the abnormality influencing a finish region in imposition printing in an imposition layout, the imposition printing in another imposition layout in which the abnormality does not influence the finish region.
    Type: Application
    Filed: February 12, 2015
    Publication date: March 24, 2016
    Inventors: Takashi Kikumoto, Kazuhiro Ohkawa
  • Patent number: 9276258
    Abstract: There are provided a positive electrode active material for an alkaline storage battery, a positive electrode for an alkaline storage battery, and an alkaline storage battery each of which has an excellent output characteristics and also has an excellent self-discharge characteristic and an excellent cycle lifetime characteristic. The positive electrode active material for an alkaline storage battery according to the present invention has nickel hydroxide particles each containing at least magnesium in a solid solution state and a cobalt compound layer coating the surface of each of the nickel hydroxide particles. Among them, the cobalt compound layer contains cobalt having an average valence of not less than 2.6 and not more than 3.0 and also contains sodium at a proportion of less than 0.10 wt % to the total weight of the cobalt compound layer. The positive electrode active material for an alkaline storage battery according to the present invention has a conductivity smaller than 1.
    Type: Grant
    Filed: July 15, 2005
    Date of Patent: March 1, 2016
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Hiroyuki Sakamoto, Kazuhiro Ohkawa, Shinichi Yuasa
  • Publication number: 20150218719
    Abstract: A device for reducing CO2 by light, including: a cathode chamber holding a first electrolyte solution that contains CO2; an anode chamber holding a second electrolyte solution; a proton conducting membrane disposed in a connecting portion between these chambers; a cathode electrode; and an anode electrode. The cathode electrode has a CO2 reduction reaction region composed of a metal or a metal compound, and the anode electrode has a photochemical reaction region composed of nitride semiconductors. The photochemical reaction region of the anode electrode has a multilayer structure of a GaN layer and an AlxGa1-xN layer containing Mg (0<x?0.25). The content of Mg in the AlxGa1-xN layer is 1×1015 or more and 1×1019 or less in terms of the number of Mg atom per cm3. The anode electrode is disposed in such a manner that the AlxGa1-xN layer can be exposed to light.
    Type: Application
    Filed: April 17, 2015
    Publication date: August 6, 2015
    Inventors: Masahiro DEGUCHI, Satoshi YOTSUHASHI, Hiroshi HASHIBA, Yuka YAMADA, Kazuhiro OHKAWA
  • Patent number: 9023531
    Abstract: Disclosed is a nonaqueous secondary battery (100) comprising a positive electrode (155) having a positive current collector (151) made of a metal, and a positive electrode active material (153) composed of a lithium-metal complex oxide. The surface of the positive electrode active material (153) is coated with a lithium salt (158) having an average thickness of 20-50 nm.
    Type: Grant
    Filed: October 17, 2008
    Date of Patent: May 5, 2015
    Assignees: Toyota Jidosha Kabushiki Kaisha, Sumitomo Metal Mining Co., Ltd.
    Inventors: Tomoyoshi Ueki, Yutaka Oyama, Takuichi Arai, Kazuhiro Ohkawa, Koichi Yokoyama, Ryuichi Kuzuo, Katsuya Kase, Syuhei Oda
  • Publication number: 20140360883
    Abstract: Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlxGa1-xN layer (0<x?0.25), an AlyGa1-yN layer (0?y?x), and a GaN layer. The AlyGa1-yN layer is interposed between the AlxGa1-xN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlxGa1-xN layer. The value of y decreases from the interface with the AlxGa1-xN layer f toward the interface with the GaN layer. The AlxGa1-xN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.
    Type: Application
    Filed: August 22, 2014
    Publication date: December 11, 2014
    Inventors: Masahiro DEGUCHI, Satoshi YOTSUHASHI, Reiko TANIGUCHI, Hiroshi HASHIBA, Yuka YAMADA, Kazuhiro OHKAWA
  • Patent number: 8709227
    Abstract: A method for reducing carbon dioxide utilizes a carbon dioxide reduction device including a cathode chamber, an anode chamber, a solid electrolyte membrane, a cathode electrode and anode electrode. The cathode electrode includes copper or copper compound. The anode electrode includes a region formed of a nitride semiconductor layer where an AlxGa1-xN (0<x?1) layer and a GaN layer are stacked. The anode electrode is irradiated with a light having a wavelength of not more than 350 nanometers to reduce the carbon dioxide on the cathode electrode.
    Type: Grant
    Filed: January 14, 2013
    Date of Patent: April 29, 2014
    Assignee: Panasonic Corporation
    Inventors: Masahiro Deguchi, Satoshi Yotsuhashi, Yuka Yamada, Kazuhiro Ohkawa
  • Patent number: 8709228
    Abstract: A method for reducing carbon dioxide utilizes a carbon dioxide reduction device including a cathode chamber, an anode chamber, a solid electrolyte membrane, a cathode electrode and anode electrode. The cathode electrode includes indium or indium compound. The anode electrode includes a region formed of a nitride semiconductor layer where an AlxGa1-xN (0<x?1) layer and a GaN layer are stacked. The anode electrode is irradiated with a light having a wavelength of not more than 350 nanometers to reduce the carbon dioxide on the cathode electrode.
    Type: Grant
    Filed: January 14, 2013
    Date of Patent: April 29, 2014
    Assignee: Panasonic Corporation
    Inventors: Masahiro Deguchi, Satoshi Yotsuhashi, Yuka Yamada, Kazuhiro Ohkawa
  • Patent number: 8699047
    Abstract: An image processing apparatus includes plural page description language processing units and a job management unit. Each of the page description language processing units corresponds to one of different page description languages. The job management unit performs management to select one of the page description language processing units, the selected page description language processing unit serving as a currently processing page description language processing unit, and to cause only the currently processing page description language processing unit to process a print job. Each of the page description language processing units includes a raster image creating unit and a raster image transferring unit. The job management unit includes a first queue, a second queue, a reception-time adding unit, an image-creation-time adding unit, a first instruction unit, a second instruction unit, a third instruction unit, a controller, and a job-being-processed list memory.
    Type: Grant
    Filed: May 17, 2012
    Date of Patent: April 15, 2014
    Assignee: Fuji Xerox Co., Ltd.
    Inventor: Kazuhiro Ohkawa
  • Publication number: 20130070292
    Abstract: An image processing apparatus includes plural page description language processing units and a job management unit. Each of the page description language processing units corresponds to one of different page description languages. The job management unit performs management to select one of the page description language processing units, the selected page description language processing unit serving as a currently processing page description language processing unit, and to cause only the currently processing page description language processing unit to process a print job. Each of the page description language processing units includes a raster image creating unit and a raster image transferring unit. The job management unit includes a first queue, a second queue, a reception-time adding unit, an image-creation-time adding unit, a first instruction unit, a second instruction unit, a third instruction unit, a controller, and a job-being-processed list memory.
    Type: Application
    Filed: May 17, 2012
    Publication date: March 21, 2013
    Applicant: FUJI XEROX CO., LTD.
    Inventor: Kazuhiro OHKAWA
  • Publication number: 20110108759
    Abstract: There are provided a positive electrode active material for an alkaline storage battery, a positive electrode for an alkaline storage battery, and an alkaline storage battery each of which has an excellent output characteristics and also has an excellent self-discharge characteristic and an excellent cycle lifetime characteristic. The positive electrode active material for an alkaline storage battery according to the present invention has nickel hydroxide particles each containing at least magnesium in a solid solution state and a cobalt compound layer coating the surface of each of the nickel hydroxide particles. Among them, the cobalt compound layer contains cobalt having an average valence of not less than 2.6 and not more than 3.0 and also contains sodium at a proportion of less than 0.10 wt % to the total weight of the cobalt compound layer. The positive electrode active material for an alkaline storage battery according to the present invention has a conductivity smaller than 1.
    Type: Application
    Filed: October 28, 2010
    Publication date: May 12, 2011
    Inventors: Hiroyuki Sakamoto, Kazuhiro Ohkawa, Shinichi Yuasa
  • Publication number: 20110073995
    Abstract: In a semiconductor device, a YAG substrate is formed as a single-crystal substrate of any of surface orientations (100), (110), and (111). In the fabrication of the semiconductor device, a TMAl gas is first fed onto the YAG substrate so as to form a nucleation layer made of aluminum, which is a group-III element. Then, an NH3 gas is fed onto the nucleation layer. This turns the surface of the nucleation layer into a group-V element and then forms a group-III-V compound layer of AlN. Then, a mixed gas of TMAl gas and NH3 gas is fed onto the group-III-V compound layer so as to form another group-III-V compound layer. Finally, a group-III nitride semiconductor layer is crystal-grown on the group-III compound layer.
    Type: Application
    Filed: September 7, 2010
    Publication date: March 31, 2011
    Applicants: KOITO MANUFACTURING CO., LTD., TOKYO UNIVERSITY OF SCIENCE
    Inventors: Akihiro Nomura, Kazuhiro Ohkawa, Akira Hirako
  • Patent number: 7879497
    Abstract: A battery is adapted such that a nickel hydroxide particle group constituted of a number of nickel hydroxide particles filled in a void part of a positive electrode substrate contains, at a ratio of 15 wt % or less, small-diameter nickel hydroxide particles each having a particle diameter of 5 ?m or less. The positive electrode substrate is configured such that a front-surface-side nickel layer and a back-surface-side nickel layer are made larger in thickness than a middle nickel layer, and an average thickness B of either the front-surface-side nickel layer or the back-surface-side nickel layer, which is thicker one, and an average thickness C of the middle nickel layer satisfy a relation of C/B?0.6.
    Type: Grant
    Filed: February 9, 2007
    Date of Patent: February 1, 2011
    Assignee: Panasonic EV Energy Co., Ltd.
    Inventors: Hiroyuki Sakamoto, Kazuhiro Ohkawa
  • Publication number: 20100221613
    Abstract: Disclosed is a nonaqueous secondary battery (100) comprising a positive electrode (155) having a positive current collector (151) made of a metal, and a positive electrode active material (153) composed of a lithium-metal complex oxide. The surface of the positive electrode active material (153) is coated with a lithium salt (158) having an average thickness of 20-50 nm.
    Type: Application
    Filed: October 17, 2008
    Publication date: September 2, 2010
    Inventors: Tomoyoshi Ueki, Yutaka Oyama, Takuichi Arai, Kazuhiro Ohkawa, Koichi Yokoyama, Ryuichi Kuzuo, Katsuya Kase, Syuhei Oda
  • Publication number: 20090202909
    Abstract: There are provided a positive electrode active material for an alkaline storage battery, a positive electrode for an alkaline storage battery, and an alkaline storage battery each of which has an excellent output characteristics and also has an excellent self-discharge characteristic and an excellent cycle lifetime characteristic. The positive electrode active material for an alkaline storage battery according to the present invention has nickel hydroxide particles each containing at least magnesium in a solid solution state and a cobalt compound layer coating the surface of each of the nickel hydroxide particles. Among them, the cobalt compound layer contains cobalt having an average valence of not less than 2.6 and not more than 3.0 and also contains sodium at a proportion of less than 0.10 wt % to the total weight of the cobalt compound layer. The positive electrode active material for an alkaline storage battery according to the present invention has a conductivity smaller than 1.
    Type: Application
    Filed: July 15, 2005
    Publication date: August 13, 2009
    Inventors: Hiroyuki Sakamoto, Kazuhiro Ohkawa, Shinichi Yuasa
  • Publication number: 20090045072
    Abstract: Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction. In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm?3 or more, but 3.0×1018 cm?3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate.
    Type: Application
    Filed: September 6, 2006
    Publication date: February 19, 2009
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO UNIVERSITY OF SCIENCE EDUCATIONAL FOUNDATION ADMINISTRATIVE ORGANIZATION
    Inventors: Katsushi Fujii, Kazuhiro Ohkawa, Masato Ono, Takashi Ito