Patents by Inventor Kazuhiro Ohkawa

Kazuhiro Ohkawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080318125
    Abstract: There are provided a low-cost positive electrode for an alkaline storage battery which retains an excellent current collectivity over a long period of time and a low-cost alkaline storage battery which retains an excellent charge/discharge efficiency over a long period of time. A positive electrode for an alkaline storage battery according to the present invention has a positive electrode substrate including a resin skeleton made of a resin and having a three-dimensional network structure and a nickel coating layer made of nickel and coating the resin skeleton and also having a void portion in which a plurality of pores are coupled in three dimensions and a positive electrode active material containing nickel hydroxide particles and filled in the void portion of the positive electrode substrate. Among them, the nickel coating layer has an average thickness of not less than 0.5 ?m and not more than 5 ?m.
    Type: Application
    Filed: July 21, 2005
    Publication date: December 25, 2008
    Inventors: Hiroyuki Sakamoto, Takao Yamamoto, Kazuhiro Ohkawa
  • Publication number: 20070224512
    Abstract: A battery is adapted such that a nickel hydroxide particle group constituted of a number of nickel hydroxide particles filled in a void part of a positive electrode substrate contains, at a ratio of 15 wt % or less, small-diameter nickel hydroxide particles each having a particle diameter of 5 ?m or less. The positive electrode substrate is configured such that a front-surface-side nickel layer and a back-surface-side nickel layer are made larger in thickness than a middle nickel layer, and an average thickness B of either the front-surface-side nickel layer or the back-surface-side nickel layer, which is thicker one, and an average thickness C of the middle nickel layer satisfy a relation of C/B?0.6.
    Type: Application
    Filed: February 9, 2007
    Publication date: September 27, 2007
    Applicant: PANASONIC EV ENERGY CO., LTD.
    Inventors: Hiroyuki Sakamoto, Kazuhiro Ohkawa
  • Patent number: 7193394
    Abstract: To provide a method of controlling charge and discharge of a secondary battery for automatic guided vehicle that can decide the timing of refresh charge and discharge accurately and minimize the frequency of refresh charge and discharge.
    Type: Grant
    Filed: May 28, 2004
    Date of Patent: March 20, 2007
    Assignee: Panasonic EV Energy Co., Ltd.
    Inventors: Toshifumi Ueda, Kazuhiro Ohkawa, Nobuyasu Morishita, Noriyuki Fujioka
  • Publication number: 20040251870
    Abstract: To provide a method of controlling charge and discharge of a secondary battery for automatic guided vehicle that can decide the timing of refresh charge and discharge accurately and minimize the frequency of refresh charge and discharge.
    Type: Application
    Filed: May 28, 2004
    Publication date: December 16, 2004
    Applicant: Panasonic EV Energy Co., Ltd.
    Inventors: Toshifumi Ueda, Kazuhiro Ohkawa, Nobuyasu Morishita, Noriyuki Fujioka
  • Patent number: 5705831
    Abstract: According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0<x<0.35) is provided. The crystal-growing method includes a step of epitaxially growing the II-VI single crystalline semiconductor on a substrate by: supplying a II element Zn onto the substrate by using a molecular beam from a ZnSe compound source and a molecular beam from a Zn elemental source; supplying a II element Cd onto the substrate by using a molecular beam from a CdSe compound source; and supplying a VI element Se onto the substrate by using a molecular beam from a ZnSe compound source.
    Type: Grant
    Filed: April 3, 1995
    Date of Patent: January 6, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Nobuyuki Uemura, Minoru Kubo, Yoichi Sasai, Kazuhiro Ohkawa, Satoshi Kamiyama, Takeshi Uenoyama
  • Patent number: 5492080
    Abstract: A crystal-growth method includes a process of filling three materials separately, one being selected from a group consisting of elemental Mg, MgS and MgSe compounds, and the other two being ZnSe and ZnS compounds, in their respective effusion cells, and a crystal-growth process of a Zn.sub.1-Y Mg.sub.Y S.sub.Z Se.sub.1-Z (0<Y>1 and 0<Z>1) single-crystalline thin film on a heated substrate by controlling the temperatures of the effusion cells and the molecular beam intensities.
    Type: Grant
    Filed: December 21, 1994
    Date of Patent: February 20, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kazuhiro Ohkawa, Tsuneo Mitsuyu
  • Patent number: 5339326
    Abstract: The invention provides a reflector for a semiconductor device which oscillates in the region from the near infrared region to the visible and short wavelength region, and a method of manufacturing the reflector. With an RF magnetron sputtering apparatus, a dielectric reflector of deposited films is formed on an end-face of a ZnSe semiconductor laser device. The deposited films are formed by 3 repetitions of alternately depositing an SiO.sub.2 film and a TiO.sub.2 film which each has an optical thickness of a quarter of the oscillating wavelength of the semiconductor laser device such that a reflectance at the oscillating wavelength of the laser device is over 90%. The dielectric reflector improves current--light output characteristics of the laser device compared to a conventional semiconductor laser device provided with no dielectric reflector.
    Type: Grant
    Filed: August 30, 1993
    Date of Patent: August 16, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Ayumu Tsujimura, Kazuhiro Ohkawa, Yoshii Shigeo, Tsuneo Mitsuyu
  • Patent number: 5079594
    Abstract: Nonlinear optical thin-films are disclosed. The nonlinear optical thin-film is comprised of a substrate, superlattice thin films formed separated on the surface of the substrate and a cover thin film of an insulating material or a semiconductor which covers the surface of the substrate on which the superlattice thin films are formed. Each superlattice thin film is formed by depositing two kinds of semiconductors having different band-gap energies alternatively.
    Type: Grant
    Filed: June 26, 1990
    Date of Patent: January 7, 1992
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Tsuneo Mitsuyu, Kazuhiro Ohkawa, Takeshi Karasawa
  • Patent number: 4996511
    Abstract: A pressure-sensitive resistance element comprising a first contact electrode formed on a first electrically insulating base plate, a second contact electrode formed on a second electrically insulating base plate disposed facing the first contact electrode, a first and/or a second pressure-sensitive electrically conductive layer formed on the whole surface of at least one of the first and second contact electrode regions, and a first and/or second pressure-sensitive electrically conduct pattern formed on at least one of the pressure-sensitive electrically conductive layer and the contact electrode having no pressure-sensitive electrically conductive layer thereon.
    Type: Grant
    Filed: May 4, 1989
    Date of Patent: February 26, 1991
    Assignee: Toshiba Silicone Co., Ltd.
    Inventors: Kazuhiro Ohkawa, Taro Yamazaki
  • Patent number: 4790968
    Abstract: A process (I), for producing a pressure-sensitive electroconductive sheet by (A), forming conductive circuits or electrodes in a flexible porous substrate and (B), applying, followed by curing a pressure-sensitive conductive paste to either or both sides of the substrate to form a pressure-sensitive conductive layer; and a process (II) for producing a pressure-sensitive electroconductive sheet by (A), forming conductive circuits or electrodes in a flexible porous subhstrate, (B), subsequently applying, followed by curing, a pressure-sensitive conductive paste to either side of the substrate to form a pressure-sensitive conductive layer, and (C), applying, followed by curing, insulating silicone rubber to the side of the substrate on which the pressure-sensitive conductive layer is not formed to form an insulating silicone rubber layer.
    Type: Grant
    Filed: October 7, 1986
    Date of Patent: December 13, 1988
    Assignee: Toshiba Silicone Co., Ltd.
    Inventors: Kazuhiro Ohkawa, Tarou Yamazaki