Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising at least Si and Al, including a silicon clathrate type crystal phase, and a proportion of the Al to a total of the Si and the Al is 0.1 atm % or more and I atm % or less.

Abstract: A surface emitting laser includes a first reflecting mirror; a second reflecting mirror; an active region between the first reflecting mirror and the second reflecting mirror. The first reflecting mirror and the second reflecting mirror each include a plurality of low refractive-index layers having a first refractive index; and a plurality of high refractive-index layers having a second refractive index higher than the first refractive index. The plurality of low refractive-index layers and the plurality of high refractive-index layers are alternated one after another. The plurality of high refractive-index layers of the first reflecting mirror includes a first layer; and a second layer having a higher thermal diffusion property in an in-plane direction than the first layer.

Abstract: A multilayer coil component includes an element body containing a plurality of metal magnetic particles and a resin existing between the plurality of metal magnetic particles and a coil disposed in the element body and configured to include a plurality of electrically interconnected coil conductors. At least one of the plurality of coil conductors has a spiral shape and has conductor portions adjacent to each other when viewed from a direction along a coil axis of the coil. The conductor portion includes a straight conductor portion extending in a straight line and a connecting conductor portion connecting the straight conductor portion and constituting a corner portion of the coil conductor. The metal magnetic particles between the connecting conductor portions adjacent to each other are lower in density than the metal magnetic particles between the straight conductor portions adjacent to each other.

Abstract: A main object of the present disclosure is to provide an active material wherein an expansion upon intercalation of a metal ion such as a Li ion is suppressed. The present disclosure achieves the object by providing an active material comprising a silicon clathrate type crystal phase, and the active material includes a Na element, a Si element and a M element that is a metal element with an ion radius larger than the Si element, and a proportion of the M element to a total of the Si element and the M element is 0.1 atm % or more and 5 atm % or less.

Abstract: According to one embodiment, a light detector includes a first semiconductor layer of a first conductivity type, a first region, a quenching part, a second region, and a first layer. The first region is located on a portion of the first semiconductor layer, includes a first-conductivity-type first semiconductor region that has a higher first-conductivity-type impurity concentration than the first semiconductor layer, and includes a second semiconductor region of a second conductivity type provided on the first semiconductor region. The quenching part is electrically connected to the second semiconductor region. The second region is located on another portion of the first semiconductor layer, includes a second-conductivity-type third semiconductor region, and includes a first-conductivity-type fourth semiconductor region provided on a portion of the third semiconductor region. The first layer is located on the second region and includes a resin that absorbs or reflects light.

Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, and having a composition represented by NaxSi136, wherein 1.

Abstract: A non-transitory computer-readable recording medium storing a resource management program for causing a computer that manages a virtualization system to execute a process, the process includes obtaining a first score according to a time-series number of unused resources for each resource type in the virtualization system, based on a use history of resources in the virtualization system by a user, obtaining, for each resource, a second score according to a use frequency and compatibility with another resource, and allocating each resource to the user in ascending order of a total value of the first score and the second score.

Abstract: According to one embodiment, a light detector includes a junction region, a first insulating portion, and a quenching part. The junction region includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The second semiconductor region is provided on the first semiconductor region and forms a p-n junction surface with the first semiconductor region. The first insulating portion has an inclined surface inclined with respect to a first direction perpendicular to the p-n junction surface and includes void. The inclined surface is provided at a same height as at least a portion of the junction region and crosses the second direction from the junction region toward the first insulating portion. The quenching part is electrically connected to the second semiconductor region.

Abstract: A cleaner system is mounted on a vehicle including an external sensor configured to acquire information outside the vehicle. The cleaner system includes: a cleaning device configured to clean the external sensor or prevent adhesion of dirt to the external sensor by discharging a cleaning medium to the external sensor; and a cleaner control unit configured to operate the cleaning device at a predetermined cleaning strength when a predetermined operation condition is satisfied. The cleaner control unit further acquires a travel situation of the vehicle, and controls a cleaning strength based on the travel situation.

Abstract: This grille shutter control device controls opening and closing of a grille shutter, taking into account not only the cooling performance of a vehicle, but also other performance aspects. The grille shutter control device is a grille shutter control device for controlling opening and closing of a grille shutter in a vehicle equipped with an internal combustion engine, wherein a control device includes: a logic selecting unit for selecting one logic from among a plurality of opening degree determining logics for determining an opening degree of a grille shutter, on the basis of an atmospheric temperature inside an exhaust pipe (K1) of an engine; and a logic executing unit for controlling opening and closing of the grille shutter by executing the one logic selected by the logic selecting unit.

Abstract: According to one embodiment, a light detector includes a plurality of elements. Each of the elements includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is located on the first semiconductor region and has a higher first-conductivity-type impurity concentration than the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The elements are arranged at a first period in a second direction crossing a first direction. The first direction is from the first semiconductor region toward the second semiconductor region. A quenching part is electrically connected with the third semiconductor region. Multiple lenses are located respectively on the elements. One of the lenses is positioned on one of the elements. A refracting layer is located between the elements and the lenses. The refracting layer has a first thickness.

Abstract: A main object of the present disclosure is to provide an active material wherein an expansion upon intercalation of a metal ion such as a Li ion is suppressed. The present disclosure achieves the object by providing an active material comprising a silicon clathrate type crystal phase, and the active material includes a Na element, a Si element and a M element that is a metal element with an ion radius larger than the Si element, and a proportion of the M element to a total of the Si element and the M element is 0.1 atm % or more and 5 atm % or less.

Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, and having a composition represented by NaxSi136, wherein 1.98<x<2.54.

Abstract: A light detector according to one embodiment, includes a substrate. The substrate includes a first semiconductor layer, an insulating layer, and a second semiconductor layer. The insulating layer is located on the first semiconductor layer. The second semiconductor layer is located on the insulating layer. The second semiconductor layer includes a photoelectric conversion part. The photoelectric conversion part includes a first semiconductor region and a second semiconductor region. The substrate includes a void and a trench. The void is positioned below the photoelectric conversion part and between the first semiconductor layer and the second semiconductor layer. The trench surrounds the photoelectric conversion part. A lower end of the trench is positioned in the second semiconductor layer. The photoelectric conversion part is electrically connected with an upper surface side of the substrate via a portion below the trench.

Abstract: A light detector includes a semiconductor layer and a light-receiving element. The semiconductor layer is of a first conductivity type. The light-receiving element includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a fourth semiconductor region. The first semiconductor region is of a second conductivity type. The second semiconductor region is located between the first semiconductor region and the semiconductor layer. The second semiconductor region is of the first conductivity type and contacts the first semiconductor region. The third semiconductor region is located between the second semiconductor region and the semiconductor layer. The third semiconductor region is of the second conductivity type. The fourth semiconductor region is located between the third semiconductor region and the semiconductor layer.

Abstract: A main object of the present disclosure is to provide an active material wherein an expansion upon intercalation of a metal ion such as a Li ion is suppressed. The present disclosure achieves the object by providing an active material comprising a silicon clathrate type crystal phase, and the active material includes a Na element, a Si element and a M element that is a metal element with an ion radius larger than the Si element, and a proportion of the M element to a total of the Si element and the M element is 0.1 atm % or more and 5 atm % or less.

Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising at least Si and Al, including a silicon clathrate type crystal phase, and a proportion of the Al to a total of the Si and the Al is 0.1 atm % or more and 1 atm % or less.

Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, including a void inside a primary particle, and a void amount of the void with a fine pore diameter of 100 nm or less is 0.05 cc/g or more and 0.15 cc/g or less.

Abstract: A first recording section 152 records chat data that is voice data, in association with time information. A second recording section 154 records metadata including information indicating a person who has made an utterance, in association with time information. An input image generating section 124 generates an input image for a user to create a report. A report creating section 170 receives information input by the user and creates a report relating to a chat.

Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, including a void inside a primary particle, and a void amount of the void with a fine pore diameter of 100 nm or less is 0.05 cc/g or more and 0.15 cc/g or less.