Abstract: A photodetector includes a plurality of first light detection elements having a first driving voltage range, the first light detection elements including first semiconductor layers having a first conductivity type and second semiconductor layers having a second conductivity type different from the first conductivity type; and a second light detection element having a second driving voltage range different from the first driving voltage range, the second light detection element including a third semiconductor layer having the first conductivity type and a fourth semiconductor layer having the second conductivity type.

Abstract: A performance information visualization apparatus includes a memory and a processor. The memory configured to stores, as node information, information that indicates a connection relationship of a node, and information that indicates a generation in which the node is added to an information processing system and a generation in which the node is deleted from the information processing system. The processor configured to that synthesizes configuration information by, when an event occurrence node where an event has occurred does not exist in configuration information of a specific generation associated with a time when the event has occurred and the event occurrence node is added to the configuration information, adding a node and connection between nodes including a connection relationship of the event occurrence node, based on the node information.

Abstract: A vehicle cleaner system according to the present invention includes: cleaner units that eject cleaning fluid to on-vehicle objects to be cleaned; motor pumps that supply the cleaning fluid to the cleaner units; normally closed solenoid valves provided between the cleaner units and the motor pumps to switch between allowance and disallowance of the transfer of the cleaning fluid from the motor pumps to the cleaner units; and a cleaner control unit that controls the motor pumps and the solenoid valves. The cleaner control unit sets an operation stop time t2, for which at least one of a motor pump and a solenoid valve is stopped, and stops, on the basis of a predetermined condition, the operation of the at least one of the motor pump and the solenoid valve for the duration of the operation stop time t2 after the cleaning fluid is ejected to the object to be cleaned.

Abstract: Provided is a vehicle cleaner system with which it can be ascertained which cleaner has broken down. A vehicle cleaner system comprises: a plurality of cleaner units; a motor pump; an electromagnetic valve which switches between allowing and denying the movement of a cleaning liquid; a cleaner control unit; and a plurality of protection determination units that protect the electromagnetic valve from being supplied with an overcurrent when the electromagnetic valve has short-circuited and is opened, and that notify the cleaner control unit that the electromagnetic valve has short-circuited and is opened. The cleaner control unit outputs, to a vehicle control unit, which electromagnetic valve is unavailable for use, on the basis of a signal that is acquired from the protection determination units and that indicates that the electromagnetic valve has short-circuited and is opened.

Abstract: A non-transitory computer-readable recording medium is provided in which a port switching program for causing a computer to execute a process including: transmitting, in response to a mirror switching instruction that specifies a migration source port and a migration destination port, a first mirror switching notification to a virtual switch that has the migration destination port to request a change of mirror setting in the migration destination port; canceling mirror setting for a transmission packet to the migration destination port in the migration source port; and canceling mirror setting for a received packet from the migration destination port in the migration source port in response to a second mirror switching notification from the virtual switch, the second mirror switching notification indicating the change of the mirror setting in the migration destination port is stored.

Abstract: According to one embodiment, a light detector includes a first semiconductor layer of a first conductivity type, a first region, a quenching part, a second region, and a first layer. The first region is located on a portion of the first semiconductor layer, includes a first-conductivity-type first semiconductor region that has a higher first-conductivity-type impurity concentration than the first semiconductor layer, and includes a second semiconductor region of a second conductivity type provided on the first semiconductor region. The quenching part is electrically connected to the second semiconductor region. The second region is located on another portion of the first semiconductor layer, includes a second-conductivity-type third semiconductor region, and includes a first-conductivity-type fourth semiconductor region provided on a portion of the third semiconductor region. The first layer is located on the second region and includes a resin that absorbs or reflects light.

Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the first region and the second region, a fourth region of the second conductivity type provided so as to surround a periphery of the second region, in a direction crossing with a direction from the first region toward the second region, and a fifth region of the first conductivity type provided between the first region and the fourth region.

Abstract: In one embodiment, a photo detection element includes a first region of a first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type provided between the second region and the first region, and a plurality of structure bodies of the first conductivity type which are provided between the first region and the third region separately in a second direction crossing with a first direction from the third region toward the second region.

Abstract: An information processing apparatus coupled to a storage device via a network includes a processor configured to: acquire a host physical address over a physical storage region in which information regarding an access to the storage device from a guest OS is stored from a first packet stored in the physical storage region storing a packet obtained by encapsulating the information regarding the access; convert the acquired host physical address into a guest physical address recognized by the guest OS; create a data structure of a block device; store the guest physical address in a data address region of the data structure; specify the host physical address corresponding to the guest physical address while referring to the memory when reading from the data address region is detected; read data from the specified host physical address over the physical storage region; and transfer the read data to the guest OS.

Abstract: A control device that includes a plurality of input ports, each of which receives a binary signal including a first level and a second level, and a setting unit, which sets a numerical value related to control based on the binary signal input to each of the input ports, is disclosed. The input port is configured to be at the second level when a failure occurs, and the setting unit associates different binary signal arrays with a plurality of the numerical values, respectively, and sets a binary signal array corresponding to a numerical value equivalent to a reference value among the plurality of numerical values as an array in which the number of the second level is the largest.

Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, and having a composition represented by NaxSi136, wherein 1.98<x<2.54.

Abstract: According to an embodiment, a semiconductor device includes a first actuator, a second actuator, a first frame provided between the first actuator and the second actuator, a first connection member connecting the first actuator and the first frame to each other, a second connection member connecting the first actuator and the first frame to each other at a position different from a position at which the first connection member connects the first actuator and the first frame to each other, a third connection member connecting the second actuator and the first frame to each other, a fourth connection member connecting the second actuator and the first frame to each other at a position different from a position at which the third connection member connects the second actuator and the first frame to each other.

Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising at least Si and Al, including a silicon clathrate type crystal phase, and a proportion of the Al to a total of the Si and the Al is 0.1 atm % or more and 1 atm % or less.

Abstract: A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.

Abstract: An apparatus obtains, from a first device, an identifier of a higher-order service for which occurrence of an abnormality or a possibility of being affected by an abnormality has been detected, where the first device searches for a range of effects of failure within a higher-order service layer that provides a higher-order service using a service provided in an object-service layer within a cloud service providing a layered structure of services. The apparatus determines a service within the object-service layer, which is reachable by tracing relations among services from the detected higher-order service, to be an in-effect-range service for which there is a possibility of being affected by an abnormality, and transmits the identifier of the in-effect-range service to a second device that searches for a range of effects of failure at a lower-order service layer that provides a lower-order service used to provide a service within the object-service layer.

Abstract: The present invention provides a processing device with a high degree of flexibility in setting of preprocessing and which is capable of increasing the preprocessing efficiency, and an analysis system provided with the same. Setting receiving means (84d) receives, for each sample, setting of a plurality of types of preprocessing and a parameter for each preprocessing. A preprocessing execution section (84e) controls a plurality of preprocessing sections and a transport arm (24) so that a plurality of types of preprocessing set for each of different samples is performed simultaneously in parallel. The preprocessing execution section (84e) performs control in such a way that preprocessing is not to be performed on different samples at the same preprocessing section at the same.

Abstract: A photodetector includes a first cell converting incident light into electric charges; and a second cell converting incident light into electric charges; wherein the first cell includes a first semiconductor layer and a second semiconductor layer provided to be closer to a light incident side than the first semiconductor layer, wherein the second cell includes a third semiconductor layer and a fourth semiconductor layer provided to be closer to a light incident side than the third semiconductor layer, wherein a first interface between the third semiconductor layer and the fourth semiconductor layer is located to be closer to the light incident side than a second interface between the first semiconductor layer and the second semiconductor layer.

Abstract: A method produces a Si-based active material containing a Si-based clathrate compound decreasing a Na element content while maintaining a crystal phase of type II clathrate. The method that produces a Si-based active material containing a Si-based clathrate compound having a crystal phase of type II clathrate, includes: preparing the Si-based clathrate compound by heating an alloy containing a Na element and a Si element at a temperature of 340° C. or more and less than 400° C. (a first heating step), heating the Si-based clathrate compound at a temperature of 340° C. or more and less than 470° C. after the first heating step (a second heating step), cooling the Si-based clathrate compound to a temperature of less than 340° C. after the second heating step (a cooling step), and heating the Si-based clathrate compound at a temperature of 340° C. or more and less than 470° C. after the cooling step (a third heating step).

Abstract: A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, including a void inside a primary particle, and a void amount of the void with a fine pore diameter of 100 nm or less is 0.05 cc/g or more and 0.15 cc/g or less.

Abstract: According to one embodiment, a light detector includes a first semiconductor region of a first conductivity type, a first element, a second element, an insulating body, a first interconnect, and a second interconnect. The second semiconductor region of the first element is provided on the first semiconductor region. The third semiconductor region of the first element is provided on the second semiconductor region. The fourth semiconductor region of the second element is provided on the first semiconductor region, and has an impurity concentration of a first conductivity type less than in the second semiconductor region. The fifth semiconductor region of the second element is provided on the fourth semiconductor region. The insulating body is provided between the first element and the second element. The first interconnect is electrically connected to the third semiconductor region. The second interconnect is electrically connected to the fifth semiconductor region.