Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

Abstract: A light irradiating device includes a substrate holder configured to hold a substrate; a light irradiating unit; and a power feed unit. The light irradiating unit comprises a light source configured to irradiate light to a surface of the substrate; and a first connector electrically connected with the light source. The power feed unit comprises a power supply module configured to supply a power to the light source; and a second connector electrically connected with the power supply module and configured to be connected to or disconnected from the first connector. The light irradiating unit and the power feed unit are coupled as one body as the first connector and the second connector are connected, and are separated from each other as the first connector and the second connector are disconnected from each other.

Abstract: There is provided a substrate processing apparatus including: a light radiator configured to radiate a light for processing into an irradiation area which is smaller than a processing target area of a surface of a substrate; a driver configured to move the irradiation area in two directions that cross each other in a plane along the surface of the substrate; and a controller configured to control the driver to move an irradiation position in two directions according to a movement pattern which has been set to radiate the light to an entire area of the processing target area.

Abstract: A light irradiating device includes a substrate holder configured to hold a substrate; a light irradiating unit; and a power feed unit. The light irradiating unit comprises a light source configured to irradiate light to a surface of the substrate; and a first connector electrically connected with the light source. The power feed unit comprises a power supply module configured to supply a power to the light source; and a second connector electrically connected with the power supply module and configured to be connected to or disconnected from the first connector. The light irradiating unit and the power feed unit are coupled as one body as the first connector and the second connector are connected, and are separated from each other as the first connector and the second connector are disconnected from each other.

Abstract: Provided is a component loading apparatus which includes: a work table comprising a working plane; a component recognizer configured to recognize components placed on the working plane of the work table; a head configured to suck the components; and a tray support for supporting a tray on which the components sucked by the head are loaded. The component loading apparatus further includes: an impurity remover configured to remove impurities attached onto the components in at least one of a first state of being placed on the working plane of the work table and a second state of being sucked by the head; and a tray analyzer configured to inspect loading positions of the components on the tray.

Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

Abstract: There is provided a substrate processing apparatus including: a light radiator configured to radiate a light for processing into an irradiation area which is smaller than a processing target area of a surface of a substrate; a driver configured to move the irradiation area in two directions that cross each other in a plane along the surface of the substrate; and a controller configured to control the driver to move an irradiation position in two directions according to a movement pattern which has been set to radiate the light to an entire area of the processing target area.

Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

Abstract: Provided is a component loading apparatus which includes: a work table comprising a working plane; a component recognizer configured to recognize components placed on the working plane of the work table; a head configured to suck the components; and a tray support for supporting a tray on which the components sucked by the head are loaded. The component loading apparatus further includes: an impurity remover configured to remove impurities attached onto the components in at least one of a first state of being placed on the working plane of the work table and a second state of being sucked by the head; and a tray analyzer configured to inspect loading positions of the components on the tray.

Abstract: A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

Abstract: A thermal catalytic layer is formed on the inner surface of a processing container and heated. Thus, when a sublimate sublimated from a coating film on a wafer W and received within the processing container reaches the vicinity of the thermal catalytic layer, the sublimate is decomposed and removed by the thermal activation of the thermal catalytic layer. In removing a sublimate attached to a light transmission window, a cleaning substrate formed with the thermal catalytic layer on the surface thereof is carried into the processing container and caused to approach the light transmission window. Thereafter, the cleaning substrate is heated so that the sublimate attached to the surface of the light transmission window is removed.

Abstract: There is provided a liquid processing apparatus including a rotation unit configured to hold the target substrate and rotate the target substrate around a vertical axis; a processing solution supply nozzle configured to supply the processing solution to the surface of the target substrate being rotated; a first gas supply unit configured to form a downward flow of a first gas that flows over the entire surface of the target substrate and is introduced into a cup in order to form a processing atmosphere suitable for a liquid process to be performed; and a second gas supply unit configured to form a downward flow of a second gas different from the first gas in a region outside the downward flow of the first gas. The first gas supply unit and the second gas supply unit are provided at a ceiling portion of the housing serving as the processing space.

Abstract: Provided is a component loading apparatus which includes: a work table comprising a working plane; a component recognizer configured to recognize components placed on the working plane of the work table; a head configured to suck the components; and a tray support for supporting a tray on which the components sucked by the head are loaded.

Abstract: There is provided a liquid processing apparatus including a rotation unit configured to hold the target substrate and rotate the target substrate around a vertical axis; a processing solution supply nozzle configured to supply the processing solution to the surface of the target substrate being rotated; a first gas supply unit configured to form a downward flow of a first gas that flows over the entire surface of the target substrate and is introduced into a cup in order to form a processing atmosphere suitable for a liquid process to be performed; and a second gas supply unit configured to form a downward flow of a second gas different from the first gas in a region outside the downward flow of the first gas. The first gas supply unit and the second gas supply unit are provided at a ceiling portion of the housing serving as the processing space.

Abstract: The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow.

Abstract: The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow.

Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

Abstract: A coating film forming apparatus for forming a film by applying a coating solution to a substrate, which is provided with a cassette section, coating unit, developing unit, pre-treatment/post-treatment units and a main arm for transferring the substrate between the respective units. In the coating unit, provided is a coating section in which a resist is applied on the substrate in a manner of single stroke by intermittently moving the substrate in a Y-direction and by moving a nozzle in an X-direction, and provided is a reduced-pressure drying section for drying under reduced pressure the substrate after being applied, and further provided is equipment for removing the coating film adhered to a periphery of the substrate. Additionally, when the reduced-pressure drying section is arranged outside the coating unit, the main arm is covered with a cover so that the inside thereof is under a solvent atmosphere.

Abstract: The focus control method of the present invention includes: rotating an optical disk; driving an optical pickup upward and downward vertically to the optical disk at timing of a signal pulse detecting the rotational angle of the optical disk; detecting a focus drive value at timing at which the focal point of a light beam is located on a recording surface of the optical disk; computing a vertical deviation amount from focus drive values at three or more detection points per rotation; applying in advance the vertical deviation amount for a given rotational angle detection signal pulse as the focus drive value; and performing focus control at the given rotational angle detection signal pulse.