Abstract: A flip chip bonder including a substrate holding mechanism and a chip die bonder for bonding a semiconductor chip having a plurality of electrodes projecting from its front surface to a substrate held on the substrate holding means. The flip chip bonder includes a chuck table, a semiconductor chip take-out area and an electrode cutting area, a cutting mechanism having a cutting tool for cutting the plurality of electrodes projecting from the front surface of the semiconductor chip held on the chuck table and arranged in the electrode cutting area to make them uniform in height, a semiconductor chip take-in mechanism, and a semiconductor chip conveying mechanism.

Abstract: On the back surface of the chip of which a front surface is formed with an electronic circuit, an adhesive film of a shape and dimensions corresponding to at least the back surface of the chip is adhered to obtain the semiconductor chip with the entire back surface covered with the adhesive film. Such a semiconductor chip is obtained by forming a division groove in the front surface of a semiconductor wafer to be divided into plural chips, grinding a back surface of the wafer until the division groove appears to divide the wafer into plural chips, adhering the adhesive film and a dicing tape on the entire back surface of the wafer, and stretching the dicing tape to cut the adhesive film along the division groove.

Abstract: A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof.

Abstract: A method of dividing a wafer having a plurality of areas, which are sectioned by the streets formed on the front surface in a lattice pattern and a plurality of devices, which are formed in the sectioned areas, along streets, the method comprising a first cutting step for holding the front surface of the wafer on a chuck table of a cutting machine and forming a first groove having a depth that is about half of the thickness of the wafer, along the streets from the rear surface of the wafer; a second cutting step for holding the rear surface of the wafer on a chuck table and forming a second groove which does not reach the first groove, along the streets from the front surface of the wafer; and a dividing step for breaking an uncut portion between the first groove and the second groove by exerting external force along the streets of the wafer, on which the first grooves and the second grooves have been formed.

Abstract: A terminal board having a plurality of terminals on which ball electrodes are formed can be prepared efficiently and economically without having any short-circuiting between terminals when its terminals formed in very close proximity to one another, as on an interposer (1), are made their heads uniform in height by causing the terminals (4) to project from surface of a board (2) coated with a resist film, and applying a cutting tool (19) to the surface of the board (2) having the terminals project therefrom to carry out lathe turning for heads of the terminals (4), while having the terminal board held by a rotatable chuck table (17) and rotating the chuck table (17).

Abstract: A method for dividing a semiconductor wafer along a plurality of streets, the semiconductor wafer having a face on which a plurality of rectangular regions are defined by the streets arranged in a lattice pattern, and a semiconductor device is formed in each of the rectangular regions. This method comprises a protective member coating step of coating the face of the semiconductor wafer with a protective member, a resist film coating step of coating the back of the semiconductor wafer, except sites corresponding to the streets, with a resist film, and a plasma etching step of applying plasma etching to the back of the semiconductor wafer to divide the semiconductor wafer along the streets.

Abstract: A supporting substrate (10) having a flat supporting face is integrated with a semiconductor wafer W while supporting the surface thereof on the supporting face of the supporting substrate (10). The semiconductor wafer W integrated with the supporting substrate (10) is polished or etched on the back thereof using a thinning device and a film is formed on the back of the semiconductor wafer W integrated with the supporting substrate (10) using a film forming device (40). Since the semiconductor wafer W is integrated with the supporting substrate, even a semiconductor wafer as thin as 100 ?m or less is not warped and thereby the film can be formed uniformly.

Abstract: A wafer processing method capable of easily handling even a thinly formed wafer during the processing thereof is provided. An annular protective member is bonded to an outer circumferential excess region out of an outer surface of the wafer, on which devices are not formed, and a rear surface is ground with the outer surface left in the mentioned condition. Since the outer circumference of the wafer is reinforced with the annular protective member, the handling of the wafer becomes easy even after the wafer becomes thinner due to a grinding operation.

Abstract: A wafer support plate comprises a support surface on which a semiconductor wafer is supported, and a crystal orientation mark which indicates the crystal orientation of the semiconductor wafer. Even the semiconductor wafer thinned by grinding can be stably held on the support surface, and the crystal orientation can be recognized even when the outer periphery of the semiconductor wafer has chipped.

Abstract: To produce a micro component, a resin base (1) capable of being dissolved by a solvent is formed, physical external force is allowed to act on the resin base (1) to form a concave (3) and after a metal is filled into the concave (3), an excessive metal is removed by grinding and the resin base (1) is dissolved by the solvent. Consequently, the necessity for lithography apparatuses such as a stepper and an etching apparatus can be eliminated, economy can be improved and production of components having complicated shapes that the lithographic technology cannot easily produce can also be produced.

Abstract: A method of manufacturing a semiconductor wafer wherein a film is formed on a back surface of a starting semiconductor wafer formed with circuits in a front surface thereof.

Abstract: A method for processing an SOI substrate composed of a backing layer comprising a semiconductor substrate, an insulating layer laminated on the upper surface of the backing layer, a thin semiconductor film layer laminated on the upper surface of the insulating layer, and circuits formed on the face of the thin semiconductor film layer, the method including: a grinding step of grinding the backing layer so as to remain with a predetermined thickness; and an etching step of removing the backing layer, which has been formed to the predetermined thickness by the grinding step, by chemical etching to expose the insulating layer.

Abstract: A machine for making a plurality of electrodes projecting from the front surface of a plate-like workpiece uniform in height, comprising a chuck table having a placing surface for placing the plate-like workpiece, which can be moved between a workpiece take-in/take-out area and a processing area, a chuck table moving unit for moving the chuck table between the workpiece take-in/take-out area and the processing area, a cutting unit having a cutting tool for cutting a plurality of electrodes projecting from the front surface of the plate-like workpiece arranged in the processing area and held on the chuck table to make them uniform in height, a cutting unit feed mechanism for moving the cutting unit in a direction perpendicular to the placing surface of the chuck table, a take-in means for carrying the plate-like workpiece before processing to the chuck table positioned in the workpiece take-in/take-out area; and a take-out means for taking out the plate-like workpiece after processing held on the chuck table p

Abstract: A flip chip bonder comprising substrate holding means and a chip die bonder for bonding a semiconductor chip having a plurality of electrodes projecting from its front surface to a substrate held on the substrate holding means, wherein

Abstract: An abrasive obtained by curing raw materials containing at least (1) an organic polyisocyanate and at least one member selected from an organic polyol and an organic polyamine as matrix resin materials, and (2) a particle containing a predetermined amount of a hydroxyl group and/or colloidal silica and the like as an abrasive particle(s), by a polymerization reaction, the matrix resin being a resin having an urethane bond and/or an urea bond.

Abstract: In order to form bumps easily on bonding pads with uniform bump head height in case of manufacturing a semiconductor wafer to form bumps thereon by wire bonding, a method for manufacturing a semiconductor wafer comprises the steps of forming bumps on bonding pads formed on a surface of a semiconductor wafer by wire bonding, forming a resin layer by coating a resin on the surface in a manner of burying the bumps, and surfacing the bumps by grinding the resin layer and making the bump head height uniform.

Abstract: A method of picking up a plurality of semiconductor chips formed by dividing a semiconductor wafer comprises the step of adhesively holding the plurality of semiconductor chips on an elastic adhesive pad which has innumerable pores in the surface and generates adhesion force when negative pressure is produced by the pores crushed by restoration force generated by elasticity and adhesion, and the step of picking up the semiconductor chips in a state of air in the pores being expanded by heating the elastic adhesive pad which adhesively holds the plurality of semiconductor chips at a predetermined temperature.

Abstract: A wafer support plate comprises a support surface on which a semiconductor wafer is supported, and a crystal orientation mark which indicates the crystal orientation of the semiconductor wafer. Even the semiconductor wafer thinned by grinding can be stably held on the support surface, and the crystal orientation can be recognized even when the outer periphery of the semiconductor wafer has chipped.

Abstract: A semiconductor wafer having circuits formed on the front surface of a base plate, and an ID mark is formed in the interior of the base plate at a predetermined position.

Abstract: A method of grinding the rear side of a semiconductor wafer, the front side of which has bumps formed thereon, includes the steps of: preparing semiconductor wafers whose front surfaces have a plurality of circuits formed in their lattice patterns; coating the front side of a selected semiconductor wafer with a resist material to form a resist layer thereon; forming a plurality of holes in each section of the resist layer at which are to be formed bumps corresponding to the circuits by removing the resist; plating at the holes with a metal to form bumps; putting the semiconductor wafer on a selected chuck table with resist layer, which is formed on its front side, laid on the chuck table in a grinding machine; and grinding the rear side of the semiconductor wafer.