Patents by Inventor Kazuhito Higuchi
Kazuhito Higuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130241040Abstract: According to one embodiment, a semiconductor device includes, a chip including a first chip electrode on a first surface on one side, and a second chip electrode on a second surface on the other side, an electrically conductive frame provided on a side periphery of the chip, a rewiring configured to electrically connect the second chip electrode and the electrically conductive frame on the other side of the chip, and an insulation side portion provided between the electrically conductive frame and the side periphery of the chip.Type: ApplicationFiled: March 13, 2013Publication date: September 19, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akira Tojo, Kazuhito Higuchi, Tomohiro Iguchi, Masako Fukumitsu, Daisuke Hiratsuka, Akihiro Sasaki, Masayuki Uchida
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Publication number: 20130082294Abstract: According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.Type: ApplicationFiled: September 7, 2012Publication date: April 4, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Toshiya NAKAYAMA, Kazuhito HIGUCHI, Hiroshi KOIZUMI, Hideo NISHIUCHI, Susumu OBATA, Akiya KIMURA, Yoshiaki SUGIZAKI, Akihiro KOJIMA, Yosuke AKIMOTO
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Publication number: 20130069102Abstract: A semiconductor light-emitting device includes a laminated body that is configured to emit light from a main surface thereof, first and second electrodes, each disposed on a surface of the laminated body that is opposite the main surface, a first terminal that is electrically coupled to the first electrode, has a concave edge but not a convex edge, and has at most three exposed sides, and a second terminal that is electrically coupled to the second electrode, has a concave edge but not a convex edge, and has at most three exposed sides.Type: ApplicationFiled: September 7, 2012Publication date: March 21, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akiya KIMURA, Kazuhito Higuchi, Hideo Nishiuchi, Susumu Obata, Toshiya Nakayama, Yoshiaki Sugizaki, Akihiro Kojima, Yosuke Akimoto
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Patent number: 8378479Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating maType: GrantFiled: July 21, 2011Date of Patent: February 19, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Akira Tojo, Tomoyuki Kitani, Kazuhito Higuchi, Masako Fukumitsu, Tomohiro Iguchi, Hideo Nishiuchi, Kyoto Kato
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Publication number: 20130015483Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked body, a first electrode, a second electrode, a reflective layer, a first metal pillar, a second metal pillar, and a sealing unit. The stacked body includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the second portion and the second semiconductor layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers a side surface of the stacked body and insulative and reflective. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first and second metal pillars to leave end portions of the first and second metal pillars exposed.Type: ApplicationFiled: July 12, 2012Publication date: January 17, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Kazuo SHIMOKAWA, Kazuhito HIGUCHI, Susumu OBATA
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Patent number: 8350283Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.Type: GrantFiled: June 3, 2011Date of Patent: January 8, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hideo Nishiuchi, Kazuhito Higuchi, Susumu Obata, Toshiya Nakayama
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Publication number: 20120241792Abstract: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.Type: ApplicationFiled: March 20, 2012Publication date: September 27, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Susumu Obata, Kazuhito Higuchi, Hideo Nishiuchi, Akiya Kimura, Toshiya Nakayama, Yoshiaki Sugizaki, Akihiro Kojima, Yosuke Akimoto
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Patent number: 8241937Abstract: An optical semiconductor device includes a light emitting element having a first surface and a second surface, the first surface having a first electrode provided thereon, the second surface being located on the opposite side from the first surface and having a second electrode provided thereon; a first conductive member connected to the first surface; a second conductive member connected to the second surface; a first external electrode connected to the first conductive member; a second external electrode connected to the second conductive member; and an enclosure sealing the light emitting element, the first conductive member, and the second conductive member between the first external electrode and the second external electrode, and being configured to transmit light emitted from the light emitting element.Type: GrantFiled: August 30, 2011Date of Patent: August 14, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Akihiko Happoya, Kazuhito Higuchi, Tomohiro Iguchi, Kazuo Shimokawa, Takashi Koyanagawa, Michinobu Inoue, Izuru Komatsu, Hisashi Ito
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Publication number: 20110312110Abstract: An optical semiconductor device includes a light emitting element having a first surface and a second surface, the first surface having a first electrode provided thereon, the second surface being located on the opposite side from the first surface and having a second electrode provided thereon; a first conductive member connected to the first surface; a second conductive member connected to the second surface; a first external electrode connected to the first conductive member; a second external electrode connected to the second conductive member; and an enclosure sealing the light emitting element, the first conductive member, and the second conductive member between the first external electrode and the second external electrode, and being configured to transmit light emitted from the light emitting element.Type: ApplicationFiled: August 30, 2011Publication date: December 22, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akihiko HAPPOYA, Kazuhito Higuchi, Tomohiro Iguchi, Kazuo Shimokawa, Takashi Koyanagawa, Michinobu Inoue, Izuru Komatsu, Hisashi Ito
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Publication number: 20110297983Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.Type: ApplicationFiled: June 3, 2011Publication date: December 8, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Hideo NISHIUCHI, Kazuhito Higuchi, Susumu Obata, Toshiya Nakayama
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Publication number: 20110297986Abstract: According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.Type: ApplicationFiled: June 7, 2011Publication date: December 8, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideo NISHIUCHI, Kazuhito Higuchi, Susumu Obata, Toshiya Nakayama
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Publication number: 20110297987Abstract: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.Type: ApplicationFiled: June 7, 2011Publication date: December 8, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroshi KOIZUMI, Yasuhide Okada, Susumu Obata, Tomomichi Naka, Kazuhito Higuchi, Kazuo Shimokawa
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Publication number: 20110272817Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating maType: ApplicationFiled: July 21, 2011Publication date: November 10, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akira TOJO, Tomoyuki KITANI, Kazuhito HIGUCHI, Masako FUKUMITSU, Tomohiro IGUCHI, Hideo NISHIUCHI, Kyoko KATO
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Patent number: 8039857Abstract: An optical semiconductor device includes a light emitting element having a first surface and a second surface, the first surface having a first electrode provided thereon, the second surface being located on the opposite side from the first surface and having a second electrode provided thereon; a first conductive member connected to the first surface; a second conductive member connected to the second surface; a first external electrode connected to the first conductive member; a second external electrode connected to the second conductive member; and an enclosure sealing the light emitting element, the first conductive member, and the second conductive member between the first external electrode and the second external electrode, and being configured to transmit light emitted from the light emitting element.Type: GrantFiled: September 2, 2009Date of Patent: October 18, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Akihiko Happoya, Kazuhito Higuchi, Tomohiro Iguchi, Kazuo Shimokawa, Takashi Koyanagawa, Michinobu Inoue, Izuru Komatsu, Hisashi Ito
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Patent number: 8039045Abstract: An object of the present invention is to provide a plating method on a glass base plate. The method allows forming a plating film on a base plate composed of a glass material with excellent adhesivity and homogeneity by means of an electroless plating method even to a thickness of 1 ?m or more. Before forming a plating film by a step of electroless plating S6, a surface treatment process is conducted on a surface of the base plate composed of a glass material. The surface treatment process comprises at least a step of glass activation treatment S2 to increase quantity of silanol groups on the surface of the base plate at least by a factor of two using an aqueous solution of diluted acid, a step of silane coupling agent treatment S3, a step of palladium catalyst treatment S4, and a step of palladium bonding treatment S5.Type: GrantFiled: July 27, 2005Date of Patent: October 18, 2011Assignee: Fuji Electric Co., Ltd.Inventors: Youichi Tei, Akira Iso, Kazuhito Higuchi, Hajime Kurihara, Hiroyuki Uwazumi
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Patent number: 8008773Abstract: According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating maType: GrantFiled: September 3, 2009Date of Patent: August 30, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Akira Tojo, Tomoyuki Kitani, Kazuhito Higuchi, Masako Fukumitsu, Tomohiro Iguchi, Hideo Nishiuchi, Kyoko Kato
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Publication number: 20110186982Abstract: According to one embodiment, a surface mount diode including a diode chip including a first main surface and a second main surface, a cathode electrode including a first internal electrode portion on the first main surface and a first external electrode portion on the first internal electrode portion, an anode electrode including a second internal electrode portion on the second main surface and a second external electrode portion on the second internal electrode portion, a thickness of the second external electrode portion being the same as a thickness of the first external electrode portion, a first covering member covering a periphery surface of one of the internal electrode portions and a periphery surface of the diode chip, and a second covering member covering a periphery surface of the other of the internal electrode portions, the second covering member being different in color from the first covering member.Type: ApplicationFiled: January 28, 2011Publication date: August 4, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoyuki KITANI, Akira TOJO, Takao NOGI, Kazuhito HIGUCHI, Tomohiro IGUCHI, Masako FUKUMITSU, Susumu OBATA, Yusaku ASANO
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Patent number: 7910402Abstract: For a suppressed breakage after a flip chip connection of a semiconductor device using a low-permittivity insulation film and a lead-free solder together, with an enhanced production yield, bump electrodes (2) are heated by a temperature profile having, after a heating up to a melting point of the bump electrodes (2) or more, a cooling in which a temperature within a range of 190 to 210° C. is kept for an interval of time within a range of 3 to 15 minutes, and a condition is met, such that 1.4<Lb/La<1.6, where La is a diameter of second electrode pads (33), and Lb is a diameter of first electrode pads (13).Type: GrantFiled: May 22, 2008Date of Patent: March 22, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Masayuki Uchida, Hisashi Ito, Kazuhito Higuchi, Takashi Togasaki
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Publication number: 20100244869Abstract: An aspect of the present disclosure, there is provided An electrical inspection probe, including, a leading end portion of the electrical inspection probe, the leading end portion contacting with a solder bump located outward the electrical inspection probe, a base material configured at the leading end portion, the base material being constituted with a conductive material, a gold layer on a surface of the base material at least in the leading end portion, a rhodium layer on a surface of the gold layer at least in the leading end portion, and a ruthenium layer on a surface of the rhodium layer at least in the leading end portion.Type: ApplicationFiled: March 25, 2010Publication date: September 30, 2010Applicant: Kabushiki Kaisha ToshibaInventors: Masayuki UCHIDA, Kazuhito Higuchi, Tomohiro Iguchi
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Publication number: 20100140639Abstract: An optical semiconductor device includes a light emitting element having a first surface and a second surface, the first surface having a first electrode provided thereon, the second surface being located on the opposite side from the first surface and having a second electrode provided thereon; a first conductive member connected to the first surface; a second conductive member connected to the second surface; a first external electrode connected to the first conductive member; a second external electrode connected to the second conductive member; and an enclosure sealing the light emitting element, the first conductive member, and the second conductive member between the first external electrode and the second external electrode, and being configured to transmit light emitted from the light emitting element.Type: ApplicationFiled: September 2, 2009Publication date: June 10, 2010Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Akihiko HAPPOYA, Kazuhito Higuchi, Tomohiro Iguchi, Kazuo Shimokawa, Takashi Koyanagawa, Michinobu Inoue, Izuru Komatsu, Hisashi Ito