Abstract: A current to be applied to a ground is defined as the sum of two sinusoidal waves having first and second frequency components. A signal to be used at the time of synchronous detection is defined as a difference between the sinusoidal waves having the first and second frequency components. As a result, a substance in the ground, and the position and depth of the substance can be specified with high accuracy.

Abstract: A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.

Abstract: A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

Abstract: A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

Abstract: A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

Abstract: A current to be applied to a ground is defined as the sum of two sinusoidal waves having first and second frequency components. A signal to be used at the time of synchronous detection is defined as a difference between the sinusoidal waves having the first and second frequency components. As a result, a substance in the ground, and the position and depth of the substance can be specified with high accuracy.

Abstract: The object of the present invention is to realize a low-invasive underground exploration apparatus, system, and method which are capable of specifying the kind, three-dimensional position, and amount of a substance present in the ground. The underground exploration apparatus, system, and method includes: measuring, at multiple points, a high frequency voltage that appears upon conduction of high frequency current through the ground to obtain measurement results at two or more frequency levels; employing an ground model using the finite element method, the boundary element method, an impedance network, or the like to estimate a substance in the ground by changing unknown quantities of the ground model such as local dielectric constant and electric conductivity so as to make an error between the actual measured value and the calculated value smaller; and displaying input information of the ground model and results of the estimation processing two-dimensionally or three-dimensionally.

Abstract: A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.

Abstract: A motorcycle lubrication oil cooling system that cools lubrication oil without increasing the number of parts, weight, or cost, and yet is simple in construction. The cooling system is applicable to motorcycles in which an engine is cooled by a coolant pump driven by a crankshaft. The coolant pump is provided on a side face of the engine, and an oil storage chamber capable of storing a specified amount of lubrication oil is provided adjacent to the coolant pump, while a covering member is provided to cover both the oil storage chamber and a coolant pump chamber that houses the coolant pump. This abstract is neither intended to define the invention discloses in this specification nor intended to limit the scope of the invention in any way.

Abstract: Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 m?cm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.

Abstract: A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

Abstract: A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.

Abstract: Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 m?cm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.

Abstract: The object of the present invention is to realize a low-invasive underground exploration apparatus, system, and method which are capable of specifying the kind, three-dimensional position, and amount of a substance present in the ground. The underground exploration apparatus, system, and method includes: measuring, at multiple points, a high frequency voltage that appears upon conduction of high frequency current through the ground to obtain measurement results at two or more frequency levels; employing an ground model using the finite element method, the boundary element method, an impedance network, or the like to estimate a substance in the ground by changing unknown quantities of the ground model such as local dielectric constant and electric conductivity so as to make an error between the actual measured value and the calculated value smaller; and displaying input information of the ground model and results of the estimation processing two-dimensionally or three-dimensionally.

Abstract: A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.

Abstract: A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

Abstract: The present invention provides a breather apparatus for a 4-cycle engine in which oil in a blow-by gas can be separated. The engine's starter includes a kick idle gear that transmits a rider's pedal force to the crankshaft. A hollow kick idle shaft rotates together with the kick idle gear and a clutch body whereby sprayed oil mist mixed in blow-by gas is separated by centrifugal force. The hollow kick idle shaft opens up into a breather passage, with a blow-by gas intake port on one end and a blow-by gas exhaust port on the other, through which the blow-by gas flows. Only blow-by gas without oil mist is re-circulated to an air cleaner and then to the combustion chamber to be burned again with new air. The oil mist returns to the oil pan in a transmission chamber.

Abstract: A motorcycle lubrication oil cooling system that cools lubrication oil without increasing the number of parts, weight, or cost, and yet is simple in construction. The cooling system is applicable to motorcycles in which an engine is cooled by a coolant pump driven by a crankshaft. The coolant pump is provided on a side face of the engine, and an oil storage chamber capable of storing a specified amount of lubrication oil is provided adjacent to the coolant pump, while a covering member is provided to cover both the oil storage chamber and a coolant pump chamber that houses the coolant pump. This abstract is neither intended to define the invention discloses in this specification nor intended to limit the scope of the invention in any way.

Abstract: A laser and mask system is disclosed which can produce a variety of thin meshes, in different materials, without exchanging masks. One device includes a laser oscillator which emits an excimer laser beam through a mask to project a plurality of laser beams onto a thin material. A translator device moves the thin material and the laser beams relative to each other in order to simultaneously create through holes of a desired shape in the thin material. A storage device stores information relating to the desired shape and a control device reads the information from the storage device and provides control signals to the laser and the translator device in accordance with the information. Another device includes an optical system for varying a magnification and a focus of the laser beams in order to create the through holes in the thin material. In another device, the mask has through holes aligned in a sequential pattern along a line and a feeding device advances the thin material parallel to the line.

Abstract: A tank 1 having a valve 6 in a head portion 4 and protected by a substantially cylindrical head skirt portion 7 is accommodated in a protective container 2. A load receiving member 23 having a projection 23c, to which a free end 7a of the head skirt portion 7 is fixed, is disposed between the head skirt portion 7 and the head support member 11. The head support member 11 is formed into a triple-layer structure formed by stacking, when viewed from the tank, a first layer having strong deformation resistance, and second and third layers 15 and 16 having weak deformation resistance. The second layer 15 includes an annular outer layer 15a having deformation resistance weaker than that of the first layer and an inner layer 15b fitted in the central space and having much weaker deformation resistance. The third layer 16 is made of the same material as that of the outer layer of the second layer. A rotation-stopper 20 is provided for the head skirt portion 7 so as to be attached to the protective container 2.