Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.

Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.

Abstract: A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implementation, a buffer underlies the doped p-layer and the re-channel, and a drain underlies the buffer.

Abstract: A signal processing unit includes: an extraction section configured to extract variation between a plurality of sampling values obtained through a plurality of sampling operations of signal levels in one or both of a first state and a second state, the first state being a state where floating diffusion is reset, the floating diffusion temporarily accumulating charges transferred from a photodiode performing photoelectric conversion, and the second state being a state where charges generated in the photodiode are accumulated in the floating diffusion; and a comparison section configured to compare the variation extracted by the extraction section and a predetermined reference value, and to switch, based on a result of the comparison, a signal to be output to a processing section in a subsequent stage.

Abstract: A wind power generator comprises a first power generator including a rotor arranged so as to be coaxial with a rotation shaft and generates electric power by the rotation of the rotor, a flywheel which is coaxial with the rotation shaft and arranged through a one-way clutch so that when the rotation shaft increases its speed, the flywheel is in an integrally rotating state with the rotation shaft, and when the rotation shaft reduces its speed, the flywheel is separated from the rotation shaft to rotate inertially, a second power generator including a rotor arranged so as to be coaxial with the flywheel and rotate integrally with the flywheel generates the electric power by the rotation of the rotor with the rotation of the flywheel, and an output portion which externally outputs any one of the electric powers generated by the first and second power generators.

Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.

Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.

Abstract: There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light receiving section which stores a charge generated by photoelectric conversion, a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and a signal output section to which a gate electrode of the MOS capacitor is connected.

Abstract: An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.

Abstract: A wind power generator comprises a first power generator including a rotor arranged so as to be coaxial with a rotation shaft and generates electric power by the rotation of the rotor, a flywheel which is coaxial with the rotation shaft and arranged through a one-way clutch so that when the rotation shaft increases its speed, the flywheel is in an integrally rotating state with the rotation shaft, and when the rotation shaft reduces its speed, the flywheel is separated from the rotation shaft to rotate inertially, a second power generator including a rotor arranged so as to be coaxial with the flywheel and rotate integrally with the flywheel generates the electric power by the rotation of the rotor with the rotation of the flywheel, and an output portion which externally outputs any one of the electric powers generated by the first and second power generators.

Abstract: To provide a semiconductor diode with a part of a semiconductor lamination portion having a mesa structure portion, which is the part where a pn-junction is formed by lamination of an n-type semiconductor layer and a p-type semiconductor layer on a substrate, comprising: a protective insulating film formed by coating a main surface of the mesa structure portion, a side face of the mesa structure portion in which an interface of the pn-junction is exposed, and an etched and exposed surface of the n-type semiconductor layer; and an anode electrode formed in ohmic-contact with the p-type semiconductor layer exposed from an opening formed on a part of the main surface of the mesa structure portion of the protective insulating film, extending from the main surface, through the side face of the mesa structure portion, to the surface of the n-type semiconductor layer.

Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.

Abstract: Biasing unit, a spindle member, and a link mechanism of a windmill for a wind power generator vary an angle of a blade in a first stage where the angle is made nearly parallel to the wind so that the blade easily rotates in light winds, a second stage where the angle is made nearly perpendicular to the wind so that the blade easily rotates at high speed when the wind speed increases, and a third stage where the blade is pushed back from the state of being nearly perpendicular to the wind to the state of being nearly parallel to the wind so as to prevent the excessive rotation in strong winds, without electrical control being not required. Accordingly this wind power generator has an excellent starting performance and can control the excessive rotation at low cost.

Abstract: Biasing unit, a spindle member, and a link mechanism of a windmill for a wind power generator vary an angle of a blade in a first stage where the angle is made nearly parallel to the wind so that the blade easily rotates in light winds, a second stage where the angle is made nearly perpendicular to the wind so that the blade easily rotates at high speed when the wind speed increases, and a third stage where the blade is pushed back from the state of being nearly perpendicular to the wind to the state of being nearly parallel to the wind so as to prevent the excessive rotation in strong winds, without electrical control being not required. Accordingly this wind power generator has an excellent starting performance and can control the excessive rotation at low cost.

Abstract: A field-effect transistor includes a semi-insulating substrate, a source electrode, a drain electrode, a gate electrode, the electrodes being provided on the semi-insulating substrate, and a buried gate region which is provided under the gate electrode and in which an impurity is doped, wherein a concave slit is provided in the semi-insulating substrate, the slit being located between the gate electrode and the drain electrode and being adjacent to the buried gate region at the side of the drain electrode.

Abstract: An imaging apparatus includes: an imaging unit configured to image an image using an imaging device; an image obtaining unit configured to obtain a plurality of images equivalent to the time of dark, imaged by the imaging unit; a registering unit configured to register, with an image obtained by the image obtaining unit, the address and change amount of a pixel where the output value of the pixel changes so as to exceed a predetermined threshold; and a correcting unit configured to correct, when taking a pixel corresponding to an address registered by the registering unit as a processing object pixel, the pixel value of the processing object pixel based on comparison between difference of the output values of the processing object pixel and a peripheral pixel of the processing object pixel, and the change amount of the processing object pixel.

Abstract: A field-effect transistor includes a semi-insulating substrate, a source electrode, a drain electrode, a gate electrode, the electrodes being provided on the semi-insulating substrate, and a buried gate region which is provided under the gate electrode and in which an impurity is doped, wherein a concave slit is provided in the semi-insulating substrate, the slit being located between the gate electrode and the drain electrode and being adjacent to the buried gate region at the side of the drain electrode.