Patents by Inventor Kazuki Nomoto
Kazuki Nomoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11955502Abstract: It is an object of the present technology to provide a solid-state image sensor capable of reducing display unevenness of a captured image. A solid-state image sensor includes a first substrate that includes a photoelectric conversion unit, a transfer gate unit that is connected to the photoelectric conversion unit, an FD unit that is connected to the transfer gate unit, and an interlayer insulating film that covers the photoelectric conversion unit, the transfer gate unit, and the FD unit. The solid-state image sensor further includes a second substrate that includes an amplifier transistor and is disposed to be adjacent to the interlayer insulating film, the amplifier transistor constituting a part of a pixel transistor connected to the FO unit via the interlayer insulating film and including a back gate unit.Type: GrantFiled: August 8, 2019Date of Patent: April 9, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Kazuki Nomoto
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Publication number: 20240088191Abstract: A photoelectric conversion device according to an embodiment of the present disclosure includes: a first semiconductor layer in which a transfer transistor is provided; a second semiconductor layer in which a pixel transistor is provided; and a wiring layer in which a gate wiring line coupled to a gate of the transfer transistor is provided. A portion or all of the pixel transistor is disposed, in plan view, in a region between a first gate wiring line and a second gate wiring line. The first gate wiring line is coupled to the gate of the transfer transistor in one of two pixels adjacent to each other. The second gate wiring line is coupled to the gate of the transfer transistor in another of the two pixels adjacent to each other.Type: ApplicationFiled: January 19, 2022Publication date: March 14, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kazuki NOMOTO, Hiroaki AMMO
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Patent number: 11894468Abstract: Described herein are the design and fabrication of Group III trioxides, such as ?-Ga2O3, trench-MOS barrier Schottky (TMBS) structures with high voltage (>1 kV), low leakage capabilities, while addressing on the necessary methods to meet the requirements unique to Group III trioxides, such as ?-Ga2O3.Type: GrantFiled: October 30, 2019Date of Patent: February 6, 2024Assignee: Cornell UniversityInventors: Wenshen Li, Zongyang Hu, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing
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Patent number: 11810932Abstract: Improvement of noise characteristics is achievable. A solid-state imaging device according to an embodiment includes a plurality of photoelectric conversion elements (333) arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit (400) that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip (201a) on which the photoelectric conversion elements are disposed and a chip (201b) on which at least a part of the detection unit is disposed are different from each other.Type: GrantFiled: November 16, 2022Date of Patent: November 7, 2023Assignee: Sony Semiconductor Solutions CorporationInventor: Kazuki Nomoto
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Publication number: 20230326984Abstract: A vertical gallium oxide (Ga2O3) device having a substrate, an n-type Ga2O3 drift layer on the substrate, an, n-type semiconducting channel extending from the n-type Ga2O3 drift layer, the channel being one of fin-shaped or nanowire shaped, an n-type source layer disposed on the channel; the source layer has a higher doping concentration than the channel, a first dielectric layer on the n-type Ga2O3 drift layer and on sidewalls of the n-type semiconducting channel, a conductive gate layer deposited on the first dielectric layer and insulated from the n-type source layer, n-type semiconducting channel as well as n-type Ga2O3 drift layer, a second dielectric layer deposited over the conductive gate layer, covering completely the conductive gate layer on channel sidewalls and an ohmic source contact deposited over the n-type source layer and over at least a part of the second dielectric layer; the source contact being configured not to be in electrical contact with the conductive gate layer.Type: ApplicationFiled: June 13, 2023Publication date: October 12, 2023Applicant: Cornell UniversityInventors: Zongyang Hu, Kazuki Nomoto, Grace Huili Xing, Debdeep Jena, Wenshen Li
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Patent number: 11715774Abstract: A vertical gallium oxide (Ga2O3) device having a substrate, an n-type Ga2O3 drift layer on the substrate, an, n-type semiconducting channel extending from the n-type Ga2O3 drift layer, the channel being one of fin-shaped or nanowire shaped, an n-type source layer disposed on the channel; the source layer has a higher doping concentration than the channel, a first dielectric layer on the n-type Ga2O3 drift layer and on sidewalls of the n-type semiconducting channel, a conductive gate layer deposited on the first dielectric layer and insulated from the n-type source layer, n-type semiconducting channel as well as n-type Ga2O3 drift layer, a second dielectric layer deposited over the conductive gate layer, covering completely the conductive gate layer on channel sidewalls and an ohmic source contact deposited over the n-type source layer and over at least a part of the second dielectric layer; the source contact being configured not to be in electrical contact with the conductive gate layer.Type: GrantFiled: March 28, 2019Date of Patent: August 1, 2023Assignee: Cornell UniversityInventors: Zongyang Hu, Kazuki Nomoto, Grace Huili Xing, Debdeep Jena, Wenshen Li
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Publication number: 20230197883Abstract: A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire-n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as in lateral integration designs. Electrical modulation of 5 orders, and an order of magnitude of optical modulation are achieved in the device.Type: ApplicationFiled: July 13, 2021Publication date: June 22, 2023Applicant: Cornell UniversityInventors: Shyam Bharadwaj, Kevin Lee, Kazuki Nomoto, Austin Hickman, Len van Deurzen, Huili Grace Xing, Debdeep Jena, Vladimir Protasenko
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Publication number: 20230140880Abstract: Improvement of noise characteristics is achievable. A solid-state imaging device according to an embodiment includes a plurality of photoelectric conversion elements (333) arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit (400) that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip (201a) on which the photoelectric conversion elements are disposed and a chip (201b) on which at least a part of the detection unit is disposed are different from each other.Type: ApplicationFiled: November 16, 2022Publication date: May 11, 2023Inventor: Kazuki Nomoto
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Patent number: 11521998Abstract: Improvement of noise characteristics is achievable. A solid-state imaging device according to an embodiment includes a plurality of photoelectric conversion elements (333) arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit (400) that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip (201a) on which the photoelectric conversion elements are disposed and a chip (201b) on which at least a part of the detection unit is disposed are different from each other.Type: GrantFiled: November 6, 2019Date of Patent: December 6, 2022Assignee: Sony Semiconductor Solutions CorporationInventor: Kazuki Nomoto
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Patent number: 11476383Abstract: A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.Type: GrantFiled: January 31, 2019Date of Patent: October 18, 2022Assignee: Cornell UniversityInventors: Henryk Turski, Debdeep Jena, Huili Grace Xing, Shyam Bharadwaj, Alexander Austin Chaney, Kazuki Nomoto
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Publication number: 20210400218Abstract: Improvement of noise characteristics is achievable. A solid-state imaging device according to an embodiment includes a plurality of photoelectric conversion elements (333) arranged in a two-dimensional grid shape in a matrix direction and each generating a charge corresponding to a received light amount, and a detection unit (400) that detects a photocurrent produced by the charge generated in each of the plurality of photoelectric conversion elements. A chip (201a) on which the photoelectric conversion elements are disposed and a chip (201b) on which at least a part of the detection unit is disposed are different from each other.Type: ApplicationFiled: November 6, 2019Publication date: December 23, 2021Inventor: Kazuki Nomoto
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Publication number: 20210384362Abstract: Described herein are the design and fabrication of Group III trioxides, such as ?-Ga2O3, trench-MOS barrier Schottky (TMBS) structures with high voltage (>1 kV), low leakage capabilities, while addressing on the necessary methods to meet the re-quirements unique to Group III trioxides, such as ?-Ga2O3.Type: ApplicationFiled: October 30, 2019Publication date: December 9, 2021Applicant: Cornell UniversityInventors: Wenshen Li, Zongyang Hu, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing
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Publication number: 20210351223Abstract: It is an object of the present technology to provide a solid-state image sensor capable of reducing display unevenness of a captured image. A solid-state image sensor includes: a first substrate that includes a photoelectric conversion unit, a transfer gate unit that is connected to the photoelectric conversion unit, an FD unit that is connected to the transfer gate unit, and an interlayer insulating film that covers the photoelectric conversion unit, the transfer gate unit, and the FD unit; and a second substrate that includes an amplifier transistor and is disposed to be adjacent to the interlayer insulating film, the amplifier transistor constituting a part of a pixel transistor connected to the FD unit via the interlayer insulating film and including a back gate unit.Type: ApplicationFiled: August 8, 2019Publication date: November 11, 2021Inventor: KAZUKI NOMOTO
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Publication number: 20210043795Abstract: A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.Type: ApplicationFiled: January 31, 2019Publication date: February 11, 2021Applicant: Cornell UniversityInventors: Henryk Turski, Debdeep Jena, Huili Grace Xing, Shyam Bharadwaj, Alexander Austin Chaney, Kazuki Nomoto
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Publication number: 20210013314Abstract: A vertical gallium oxide (Ga2O3) device having a substrate, an n-type Ga2O3 drift layer on the substrate, an, n-type semiconducting channel extending from the n-type Ga2O3 drift layer, the channel being one of fin-shaped or nanowire shaped, an n-type source layer disposed on the channel; the source layer has a higher doping concentration than the channel, a first dielectric layer on the n-type Ga2O3 drift layer and on sidewalls of the n-type semiconducting channel, a conductive gate layer deposited on the first dielectric layer and insulated from the n-type source layer, n-type semiconducting channel as well as n-type Ga2O3 drift layer, a second dielectric layer deposited over the conductive gate layer, covering completely the conductive gate layer on channel sidewalls and an ohmic source contact deposited over the n-type source layer and over at least a part of the second dielectric layer; the source contact being configured not to be in electrical contact with the conductive gate layer.Type: ApplicationFiled: March 28, 2019Publication date: January 14, 2021Applicant: Cornell UniversityInventors: Zongyang Hu, Kazuki Nomoto, Grace Huili Xing, Debdeep Jena, Wenshen Li
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Patent number: 9806121Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.Type: GrantFiled: August 8, 2016Date of Patent: October 31, 2017Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Kazuki Nomoto, Kaneyoshi Takeshita, Hiroyuki Ohri
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Publication number: 20160351613Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.Type: ApplicationFiled: August 8, 2016Publication date: December 1, 2016Inventors: KAZUKI NOMOTO, KANEYOSHI TAKESHITA, HIROYUKI OHRI
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Patent number: 9455295Abstract: There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light receiving section which stores a charge generated by photoelectric conversion, a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and a signal output section to which a gate electrode of the MOS capacitor is connected.Type: GrantFiled: April 1, 2013Date of Patent: September 27, 2016Assignee: SONY CORPORATIONInventors: Kaneyoshi Takeshita, Kazuki Nomoto
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Patent number: 9437641Abstract: A solid-state imaging device includes a substrate, a photoelectric conversion section, a first impurity layer having a carrier polarity of a second conductivity type, a charge-to-voltage converting section, an amplifying section, and a second impurity layer having a carrier polarity of the second conductivity type. The second impurity layer is disposed in a region between the photoelectric conversion section and the amplifying section. The second impurity concentration of the second P-type impurity layer is made higher than the first impurity concentration of the first impurity layer.Type: GrantFiled: April 16, 2015Date of Patent: September 6, 2016Assignee: SONY CORPORATIONInventors: Kazuki Nomoto, Kaneyoshi Takeshita, Hiroyuki Ohri
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Patent number: 9362389Abstract: A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.Type: GrantFiled: August 27, 2014Date of Patent: June 7, 2016Assignee: University of Notre Dame du LacInventors: Huili (Grace) Xing, Debdeep Jena, Kazuki Nomoto, Bo Song, Mingda Zhu, Zongyang Hu