Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

Abstract: A method for forming a pattern of metal oxide capable of selectively etching an etching object containing metal oxide relative to a non-etching object and forming a pattern of the metal oxide along a pattern of the non-etching object serving as a template. Metal oxide containing oxide of at least one of tin and indium is etched using an etching gas to form the pattern of the metal oxide. An etching gas containing halon is brought into contact with a member to be etched in the presence of plasma, and etching is performed while a bias power is applied to a lower electrode (2) supporting the member to be etched to selectively etch a metal oxide layer (22) relative to a silicon substrate (24), a template layer (21), and an underlying layer (23), and the predetermined pattern of the template layer (21) is transferred to the metal oxide layer (22).

Abstract: There is provided a plasma etching method capable of selectively etching an etching object containing oxide of at least one of tin and indium compared to a non-etching object. The plasma etching method includes: an etching step of bringing an etching gas containing an unsaturated compound having a fluorine atom and a bromine atom in the molecule thereof into contact with a member to be etched including an etching object to be etched by the etching gas and a non-etching object not to be etched by the etching gas in the presence of plasma, performing etching while applying a bias power exceeding 0 W to a lower electrode supporting the member to be etched, and selectively etching the etching object compared to the non-etching object. The etching object contains oxide of at least one of tin and indium and the non-etching object contains at least one of a silicon-containing compound and a photoresist.

Abstract: An etching method including an etching step of bringing an etching gas which contains nitrosyl fluoride and has been converted into plasma into contact with a member to be etched (9) having an etching object and a non-etching object, and selectively etching the etching object as compared with the non-etching object. The etching step is performed in a chamber (7) containing the member to be etched (9) using a remote plasma generation device (16) provided outside the chamber (7) as a plasma generation source. The concentration of nitrosyl fluoride in the etching gas is 0.3 vol % or more, the temperature condition of the etching step is 0° C. to 250° C., and the pressure condition of the etching step is 100 Pa or more and 3 kPa or less. The etching object includes silicon nitride. Also disclosed is a method for producing a semiconductor device using the etching method.

Abstract: A set of headphones (1) comprises a pair of speaker units (3); a pair of ear pad portions (4); a plurality of temperature change modules (24) that are provided inside the pair of ear pad portions (4), and that heat and/or cool electrically so as to convey a temperature other than normal temperature to the user; and a temperature control unit (31) that drives the plurality of temperature change modules (24) on a rotating basis while shifting the phase of operation individually or in groups.

Abstract: A method for removing a halogen fluoride in a mixed gas by reacting the mixed gas containing a halogen fluoride including bromine or iodine with a removing agent, wherein the removing agent is a chloride, bromide or iodide of potassium, sodium, magnesium, calcium and barium. Also disclosed is a quantitative analysis method as well as a quantitative analyzer for a gas component contained in a hydrogen fluoride mixed gas, the method characterized by reacting a mixed gas containing a halogen fluoride and another gas component with a removing agent, thereby removing the halogen fluoride in the mixed gas, further removing produced by-products, and quantitatively analyzing a residual gas by a gas chromatograph.

Abstract: An etching method including an etching step of bringing, in the presence of plasma, an etching gas containing a fluorine compound with three or fewer carbon atoms having at least one bond of a carbon-oxygen double bond and an ether bond in a molecule into contact with a target etching member having an etching target and a non-etching target, and selectively etching the etching target in comparison with the non-etching target. A concentration of the fluorine compound in the etching gas is 0.5 vol% or more to 40 vol% or less, and the etching target has silicon nitride.

Abstract: An apparatus for storing a thin film device, the apparatus including: a thin film device 3 having an insulating thin film containing Si and having a thickness of 100 nm or less; a solution in contact with the thin film; and a container having a tank that seals the solution, wherein the solution is a solution that satisfies any of the following conditions (1) to (3). (1) A solution containing water in a volume ratio of 0% or more to 30% or less (2) A solution cooled and maintained at a temperature equal to or higher than a solidification point and lower than 15° C. (3) A solution that contains a salt with a concentration of 1 mol/L or more and a saturation concentration or less and is cooled and maintained to a temperature equal to or higher than a solidification point and lower than 25° C.

Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

Abstract: Provided is an electrolyte membrane including at least the following: an A-layer composed of an ion-conducting fluorinated polymer and a non-ion-conducting fluorinated polymer; and a B-layer composed of an ion-conducting hydrocarbon polymer, wherein the ion-conducting hydrocarbon polymer is dispersed in the A-layer. Provided is an electrolyte membrane having excellent oxidation resistance. In addition, provided is an electrolyte membrane for a redox-flow battery, in which the electrolyte membrane used as a barrier membrane for a redox-flow battery makes it possible to achieve high power efficiency and stable charge and discharge even in long-term use.

Abstract: A first modulation voltage is applied to a thin film. An amount of a change in the phase of a current carried through the thin film with respect to the phase of the first modulation voltage is compared with a threshold. Upon detecting that the amount of the change in the phase exceeds the threshold is detected, the application of the first modulation voltage is stopped. Thus, a nanopore is formed on the thin film at high speed.

Abstract: A metal removal method which includes: a reaction step of bringing a treatment gas containing a fluorine-containing interhalogen compound and a metal-containing material containing a metal element into contact with each other to generate metal fluoride which is a reaction product of the fluorine-containing interhalogen compound and the metal element; and a volatilization step of heating the metal fluoride under an inert gas atmosphere or in a vacuum environment for volatilization. The metal element is at least one kind selected from iron, cobalt, nickel, selenium, molybdenum, rhodium, palladium, tungsten, rhenium, iridium, and platinum. Also disclosed is a dry etching method using the metal removal method and a production method for a semiconductor element using the dry etching method.

Abstract: Provided are a first tank; a second tank; a thin film having a nanopore, which communicates the first tank to the second tank, and disposed between the first and second tanks; a first electrode provided in the first tank; and a second electrode provided in the second tank. A wall surface of the nanopore has an ion adsorption preventing structure to prevent desorption/adsorption of an ion contained in a solution filling the first tank and/or the second tank, and a voltage is applied between the first and second electrodes to measure an ion current flowing through the nanopore.

Abstract: A set of headphones (1) comprises a pair of speaker units (3); a pair of ear pad portions (4); a plurality of temperature change modules (24) that are provided inside the pair of ear pad portions (4), and that heat and/or cool electrically so as to convey a temperature other than normal temperature to the user; and a temperature control unit (31) that drives the plurality of temperature change modules (24) on a rotating basis while shifting the phase of operation individually or in groups.

Abstract: A method for removing a metal compound capable of selectively removing an oxide of a metal, a nitride of a metal, or an oxynitride of a metal while suppressing the removal of silicon dioxide, silicon nitride, polysilicon, a simple substance of a metal, or the like. The method includes bringing at least one metal compound selected from oxides of a metal, nitrides of a metal, and oxynitrides of a metal into contact with a treatment liquid to remove it from a treatment object. The metal is at least one selected from tungsten, cobalt, nickel, tantalum, titanium, iron, copper, and molybdenum. The treatment liquid is an aqueous solution containing at least one compound for removal selected from carboxylic acids and salts thereof and contains the compound(s) for removal at a total concentration of 2 mass % or more.

Abstract: A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride, which is a compound of bromine or iodine and fluorine, is brought into contact with a member to be etched (12) having an etching object, which is an object to be etched by the etching gas, thereby etching the etching object without using plasma. The etching object contains at least one metal selected from among titanium, indium, and tin. Also disclosed is a production method for manufacturing a semiconductor element using the dry etching method as well as a cleaning method for cleaning an inner surface of a chamber of a semiconductor element manufacturing apparatus using the dry etching method.

Abstract: There is provided a method for producing high-purity bromine pentafluoride while leaving a less amount of an unreacted fluorine gas. The method for producing bromine pentafluoride includes a reaction step of feeding a bromine-containing compound, which is at least one of a bromine gas and bromine trifluoride, and a fluorine gas to a reactor to give a (fluorine atom):(bromine atom) molar ratio, that is, F/Br of 3.0 or more and 4.7 or less and reacting the bromine-containing compound and the fluorine gas to each other to obtain a reaction mixture containing bromine pentafluoride and bromine trifluoride; and a separation step of separating bromine pentafluoride and bromine trifluoride in the reaction mixture from each other.

Abstract: There is provided an etching method for silicon nitride that enables selective etching of silicon nitride without using plasma. The etching method for silicon nitride includes placing etching object (12) containing silicon nitride in an etching gas containing halogen fluoride, which is a compound of bromine or iodine and fluorine, to etch the silicon nitride of the etching object (12) without using plasma under a pressure of 1 Pa to 80 kPa.

Abstract: Provided is an etching method capable of selectively etching an etching target containing a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom with respect to a specific non-etching target without using plasma. The etching method includes an etching step in which an etching gas containing fluorine gas is brought into contact with a member to be etched including an etching target and a non-etching target in the absence of plasma to selectively etch the etching target with respect to the non-etching target. The etching target contains a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom. The non-etching target includes at least one selected from tantalum, cobalt, copper, titanium nitride, nickel, and amorphous carbon. The etching step is performed under temperature conditions of from 40° C. to less than 350° C.

Abstract: An etching method capable of selectively etching an oxide, which method includes an etching step in which an etching target (12) including an oxide is placed in a chamber (10), and the oxide included in the etching target (12) is etched in the chamber (10) using an etching gas containing a fluorine-containing compound including a functional group represented by the chemical formula below: wherein a symbol * means a bonding point with another atom or atomic group. The oxide is at least one of a metal oxide or a semimetal oxide. Further, in the etching step, the etching is performed without generating a plasma of the etching gas in the chamber (10).