Abstract: An epoxy resin composition for encapsulating a semiconductor device comprising as essential components (A) an epoxy resin; (B) a phenolic resin; (C) a curing accelerator; and (D) a hollow inorganic filler having an average particle size of 4 to 100 &mgr;m and an average shell thickness of 1.5 &mgr;m or more, wherein the amounts of the component (A) and the component (B) are adjusted such that a total amount of X and Y (X+Y) is 350 or more, wherein X is an epoxy equivalent of the epoxy resin (A), and Y is a hydroxyl group equivalent of the phenolic resin (B); and a semiconductor device comprising a semiconductor element encapsulated by the epoxy resin composition.

Abstract: An epoxy resin composition for encapsulating a semiconductor device comprising as essential components (A) an epoxy resin; (B) a phenolic resin; (C) a curing accelerator; and (D) a hollow inorganic filler having an average particle size of 4 to 100 &mgr;m and an average shell thickness of 1.5 &mgr;m or more, wherein the amounts of the component (A) and the component (B) are adjusted such that a total amount of X and Y (X+Y) is 350 or more, wherein X is an epoxy equivalent of the epoxy resin (A), and Y is a hydroxyl group equivalent of the phenolic resin (B); and a semiconductor device comprising a semiconductor element encapsulated by the epoxy resin composition.

Abstract: There are provided a circuit-forming substrate comprising a long stainless steel foil having formed on one surface or both surfaces thereof a polyimide resin layer wholly or partially, and a circuit substrate formed by using the circuit-forming substrate, wherein a conductor layer is finely patterned on the circuit-forming substrate. The circuit-forming substrate sufficiently satisfies low cost, high density and high reliability, scarcely causes warping of the substrate itself, and has excellent workability.

Abstract: There are provided a circuit-forming substrate comprising a long stainless steel foil having formed on one surface or both surfaces thereof a polyimide resin layer wholly or partially, and a circuit substrate formed by using the circuit-forming substrate, wherein a conductor layer is finely patterned on the circuit-forming substrate. The circuit-forming substrate sufficiently satisfies low cost, high density and high reliability, scarcely causes warping of the substrate itself, and has excellent workability.

Abstract: A semiconductor device in which the space between a semiconductor chip and an auxiliary wiring plate is sealed with resin. The auxiliary wiring plate has insulating layers and on both sides of the routing conductor, the insulating layer on the side of the semiconductor chip has a hole being led from the routing conductor to the electrode of the semiconductor chip, the metal filled in the hole and the metal bump formed so as to protrude from the hole serves as an inner electrode. The semiconductor device can be manufactured by the TAB technique.

Abstract: A semiconductor device capable of preventing the occurrence of defect of electroconductivity, wherein a semiconductor chip 1 equipped with electrodes 11 is mounted on an auxiliary wiring plate 2 in the state of facing the surface of the electrode 11 side, leading conductors 23 are disposed in the inside of the auxiliary wiring plate 2, one end of each leading conductor 23 forms an internal electrode 21 projecting from the surface of the auxiliary wiring plate 2 at the side of mounting the semiconductor chip 1, the other end of the leading conductor 23 forms an external electrode 22 projecting from the surface of the auxiliary wiring plate opposite to the side of mounting the semiconductor chip 1, and each of the internal electrodes 21 is connected to each of the electrodes 11 of the semiconductor chip 1, at least a gap between the semiconductor chip 1 and the auxiliary wiring plate 2 is encapsulated with a heat-welding polyimide resin layer.

Abstract: There is provided a color video camera apparatus (10) which includes an image sensor (11) having a plurality of pixel elements for converting an optical image into an electric image signal, a color filter (12) arranged on the image sensor and having a predetermined mosaic pattern of different colors including complementary colors, an image signal processing circuit (15) for processing the electric image signal to produce at least first and second color difference signals (2R-G) and (2B-G), a variable coefficient generator (20) for generating first and second coefficients (a) and (b) each of which is variable in dependence on the first and second color difference signals, first and second multipliers (19 and 22) for multiplying the first and second color difference signals respectively by the second and first coefficients, and first and second adders (18 and 21 ) for adding outputs of the second and first multipliers to the first and second color difference signals to generate objective third and fourth color

Abstract: A semiconductor device in which a semiconductor chip is encapsulated in an epoxy resin composition comprising (A) an epoxy resin represented by formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 each represents an alkyl group having from 1 to 4 carbon atoms, and (B) a reaction product obtained by preliminarily reacting a silane compound represented by formula (II): ##STR2## wherein X represents a monovalent organic group having at least one functional group selected from the group consisting of a glycidyl group, an amino group, and a mercapto group; Y represents an alkoxy group having from 1 to 4 carbon atoms; and n represents 0, 1 or 2, with a phenol aralkyl resin represented by formula (III) ##STR3## wherein m represents 0 or a positive integer. The epoxy resin composition has low moisture absorption and low stress to provide a semiconductor device excellent in thermal crack resistance and moisture resistance.

Abstract: The present invention provides a process for producing a metal/polyimide composite article such as high-density wiring boards. This metal/polyimide composite article is produced by a method which comprises coating a polyamic acid alkyl ester represented by the following formula on a metallic film and curing it: ##STR1## wherein R.sub.1 and R.sub.2 which may be identical or different each represents an organic group of 1 or more carbon atoms.

Abstract: A positively photosensitive polyimide composition is disclosed, which composition comprises polyimide having repeating unit represented by formula (I): ##STR1## wherein Ar.sup.1 represents a tetravalent aromatic hydrocarbon group; Ar.sup.2 represents a divalent aromatic hydrocarbon group having an acyloxy group at the ortho-position and/or the meta-position of the aromatic ring; Ar.sup.3 represents a divalent aromatic hydrocarbon group; and the subunit having an amount ratio of m in the repeating unit is present in an amount of at least 20% by weight based on the polyimide. The composition exhibits high photosensitivity in reproduction of a fine pattern and excellent dimensional stability.

Abstract: A siloxane-modified polyimide precursor which can be converted into a polyimide having excellent adhesion and moisture resistance is produced by simultaneously polymerizing a diaminosiloxane and a diamine containing no silicon atoms in its molecule with 3,3',4,4'-biphenyltetracarboxylic dianhydride, wherein the diaminosiloxane is used in an amount of 1 to 4 mole % per mole of the total diamino compounds and such that the silicon content in the final reaction product is 0.5 wt % or less. The thus obtained precursor solution is further heat aged to reduce the molecular weight of the precursor so that solution viscosity is decreased to a proper level suitable for coating operation.

Abstract: A process for producing a polyimide precursor having excellent adhesion property and improved moisture resistance by polymerization of an organic tetracarboxylic acid component and a diamine is disclosed. A portion of the organic tetracarboxylic acid is reacted with an aminosilane compound in which H in an amino group is substituted with a monovalent organic group containing a hydrophobic aromatic ring, to produce a silane-modified polycarboxylic acid component and the resulting silane-modified polycarboxylic acid component is polymerized with a diamine together with the residual organic tetracarboxylic acid component.