Abstract: A semiconductor device is disclosed wherein a pair of radiating terminals and a plurality of lead terminals are formed from a single lead frame. A hole or holes in each radiating terminal are formed with an equal width and in an equal pitch to those of gaps between the lead terminals, and the opposite sides of each hole of the radiating terminal are connected to each other by a support element. The support elements of the radiating terminals and support elements which interconnect the lead terminals are formed with an equal length and in an equal pitch to allow the support elements to be cut away by a plurality of punches which are arranged in an equal pitch and have an equal width.

Abstract: A semiconductor device of the present invention comprises a semiconductor pellet, a radiation plate mounted with the semiconductor pellet, a plurality of lead terminals electrically connected with the semiconductor pellet, and a resin member for encapsulating the above items. The resin member has a first surface and a second surface, and the radiation plate has a first portion exposed to the outside from the first surface of the resin member and a second portion exposed to the outside from the second surface of the resin member.

Abstract: A semiconductor device having lead terminals bent in a J-shape is disclosed. A radiating plate having a recess formed on an outer peripheral portion thereof is exposed to a lower face of a resin member and free ends of outer portions of the lead terminals are positioned in the recess of the radiating plate. The free ends of the outer portions of the lead terminals and the recess of the radiating plate are isolated from each other by projections of the resin member. Since the radiating plate is exposed to the lower face of the resin member, the heat radiating property is high whereas the radiating plate and the lead terminals are not short-circuited to each other at all.

Abstract: A lead-frame is sealed in a full-mold insulating package together with a semiconductor chip; the lead-frame has a conductive die pad for mounting the semiconductor chip, first conductive leads integral with the conductive die pad and electrically connected through conductive wires to bonding pads of the semiconductor chip so as to supply a ground potential to the semiconductor chip and second conductive leads separated from the conductive die pad so as to supply high-frequency input signals through conductive wires to other bonding pads, and the second conductive leads are respectively located between the first conductive leads and other first conductive leads closest to the corners of the full-mold package so that a good electrical isolation is provided between the second conductive leads.

Abstract: A variable frequency microwave oscillator comprises an oscillation FET of a junction type, a fixed impedance block connected to the source of the oscillation FET for determining the drain impedance on the source of the oscillation FET, and a variable bias block including inductance connected to the drain of the oscillation FET and an impedance controlling junction FET both for determining the drain impedance of the oscillation FET of a junction type. The gate of the oscillation FET is connected to an external resonance block which generates an oscillation in association with the negative impedance appearing on the gate of the oscillation FET. The oscillation frequency is controlled by a control voltage applied to the gate of the impedance controlling FET.