Patents by Inventor Kazunobu Maeshige

Kazunobu Maeshige has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10677963
    Abstract: A curved substrate with a film includes a substrate having a first main surface, a second main surface and an end surface, and an antiglare film provided on the first main surface. The substrate has a flat portion and a bent portion. A value obtained by dividing a reflected-image diffusibility index value R of the bent portion by the sum of the reflected-image diffusibility index value R of the bent portion and a reflected-image diffusibility index value R of the flat portion is 0.3 or higher and 0.8 or less.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: June 9, 2020
    Assignee: AGC Inc.
    Inventors: Azusa Takai, Yusuke Kobayashi, Kazunobu Maeshige, Takaaki Murakami
  • Patent number: 10501369
    Abstract: A translucent substrate includes a glass substrate containing at least one element selected from a group consisting of Bi, Ti and Sn; a coating layer formed on the glass substrate; and a transparent conductive film formed on the coating layer, wherein the coating layer is deposited by a dry depositing method.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: December 10, 2019
    Assignee: AGC Inc.
    Inventors: Takahiro Mashimo, Naoto Kihara, Kazunobu Maeshige, Teruo Fujiwara, Masahiro Kishi, Nobuhiro Nakamura, Mamoru Isobe
  • Patent number: 10239783
    Abstract: A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm?1 to 3800 cm?1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: March 26, 2019
    Assignee: AGC INC.
    Inventors: Hiroshi Hanekawa, Nobutaka Aomine, Yuki Aoshima, Hirotomo Kawahara, Kazunobu Maeshige
  • Patent number: 10204767
    Abstract: A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: February 12, 2019
    Assignee: AGC Inc.
    Inventors: Hirotomo Kawahara, Nobutaka Aomine, Kazunobu Maeshige, Yuki Aoshima, Hiroshi Hanekawa
  • Publication number: 20180215659
    Abstract: The present invention provides a cover glass and a glass laminate which are reduced in warpage, and have excellent scratch resistance, low reflecting properties and excellent optical properties. According to the present invention, a cover glass and a glass laminate which are reduced in glass warpage, retain the effect of scratch resistance, and have low reflecting properties and excellent optical properties can be provided by alternately superposing a film including a high-refractive-index material and a film including a low-refractive-index material, in given amounts.
    Type: Application
    Filed: January 18, 2018
    Publication date: August 2, 2018
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Kazunobu MAESHIGE, Nobutaka AOMINE, Hiroyuki OKAWA, Kiyoshi TAMAI, Hitoshi ONODA, Makoto SANO, Yusuke KOBAYASHI
  • Publication number: 20180158655
    Abstract: A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.
    Type: Application
    Filed: February 1, 2018
    Publication date: June 7, 2018
    Applicant: Asahi Glass Company, Limited
    Inventors: Hirotomo KAWAHARA, Nobutaka AOMINE, Kazunobu MAESHIGE, Yuki AOSHIMA, Hiroshi HANEKAWA
  • Patent number: 9988303
    Abstract: A glass substrate provided with a coating film, including a glass substrate and a coating film containing at least one TiO2 layer having a refractive index of at least 2.20 at a wavelength of 632 nm, formed by low temperature plasma CVD method on the glass substrate, and a method for producing a glass substrate provided with a coating film, which includes forming a TiO2 layer on a glass substrate by low temperature plasma CVD method using a film-forming material containing at least one member selected from an alkoxide type titanium material, an amide type titanium material and a halide type titanium material, at a plasma power density of at least 55 kW/m at a film-forming rate of from 15 to 200 nm·m/min.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: June 5, 2018
    Assignee: Asahi Glass Company, Limited
    Inventors: Hiroshi Hanekawa, Nobutaka Aomine, Hirotomo Kawahara, Yuki Aoshima, Kazunobu Maeshige
  • Patent number: 9922805
    Abstract: A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: March 20, 2018
    Assignee: Asahi Glass Company, Limited
    Inventors: Hirotomo Kawahara, Nobutaka Aomine, Kazunobu Maeshige, Yuki Aoshima, Hiroshi Hanekawa
  • Publication number: 20180052254
    Abstract: A curved substrate with a film includes a substrate having a first main surface, a second main surface and an end surface, and an antiglare film provided on the first main surface. The substrate has a flat portion and a bent portion. A value obtained by dividing a reflected-image diffusibility index value R of the bent portion by the sum of the reflected-image diffusibility index value R of the bent portion and a reflected-image diffusibility index value R of the flat portion is 0.3 or higher and 0.8 or less.
    Type: Application
    Filed: October 30, 2017
    Publication date: February 22, 2018
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Azusa Takai, Yusuke Kobayashi, Kazunobu Maeshige, Takaaki Murakami
  • Publication number: 20180044229
    Abstract: A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm?1 to 3800 cm?1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.
    Type: Application
    Filed: October 11, 2017
    Publication date: February 15, 2018
    Applicant: Asahi Glass Company, Limited
    Inventors: Hiroshi HANEKAWA, Nobutaka AOMINE, Yuki AOSHIMA, Hirotomo KAWAHARA, Kazunobu MAESHIGE
  • Publication number: 20170283952
    Abstract: A plasma CVD apparatus includes a plasma source connected to an alternating current power supply or two or more alternating current power supplies, configured to generate plasma; and a magnet array configured by a plurality of magnets. The plasma source has an electrode group, which is configured by arranging n electrodes (n being a positive even integer), in an order of electrode numbers. Each of the electrodes of the electrode group is connected to the alternating current power supply. An exit of a flow channel for a precursor gas is formed between adjacent electrodes of the electrode group. The magnet array is arranged so that a north pole or a south pole of each of the magnets is facing the plasma source. In the magnet array, for at least one pair of adjacent two magnets, poles facing the plasma source are arranged to be the same.
    Type: Application
    Filed: June 19, 2017
    Publication date: October 5, 2017
    Applicant: Asahi Glass Company, Limited
    Inventors: Hirotomo KAWAHARA, Kazunobu MAESHIGE, Nobutaka AOMINE, Hiroshi HANEKAWA
  • Publication number: 20170036948
    Abstract: To provide a glass substrate provided with a coating film having a high refractive index titania layer which is excellent in the heat resistance with cracking or the like by heat treatment suppressed, and a method for producing such a glass substrate provided with a coating film. A glass substrate provide with a coating film, comprising a glass substrate and a coating film containing at least one TiO2 layer having a refractive index of at least 2.20 at a wavelength of 632 nm, formed by low temperature plasma CVD method on the glass substrate, and a method for producing a glass substrate provided with a coating film, which comprises a step of forming a TiO2 layer on a glass substrate by low temperature plasma CVD method using a film-forming material containing at least one member selected from an alkoxide type titanium material, an amide type titanium material and a halide type titanium material, at a plasma power density of at least 55 kW/m at a film-forming rate of from 15 to 200 nm·m/m in.
    Type: Application
    Filed: October 20, 2016
    Publication date: February 9, 2017
    Applicant: Asahi Glass Company, Limited
    Inventors: Hiroshi HANEKAWA, Nobutaka Aomine, Hirotomo Kawahara, Yuki Aoshima, Kazunobu Maeshige
  • Patent number: 9423684
    Abstract: To provide a process for producing an EUV mask blank, whereby the deformation of a substrate due to film stress in a Mo/Si multilayer reflective film can be reduced, and the change with time of the film stress in the Mo/Si multilayer reflective film can be reduced. A process for producing a reflective mask blank for EUVL, which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming an absorber layer for absorbing EUV light, on the multilayer reflective film, to produce a reflective mask blank for EUV lithography, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the uppermost layer of the multilayer reflective film is a Si film, and after forming the absorber layer, the substrate on which the absorber layer is formed is subjected to heating treatment at a temperature of from 110 to 170° C.
    Type: Grant
    Filed: March 27, 2014
    Date of Patent: August 23, 2016
    Assignee: Asahi Glass Company, Limited
    Inventors: Kazunobu Maeshige, Masaki Mikami
  • Publication number: 20160060162
    Abstract: A translucent substrate includes a glass substrate containing at least one element selected from a group consisting of Bi, Ti and Sn; a coating layer formed on the glass substrate; and a transparent conductive film formed on the coating layer, wherein the coating layer is deposited by a dry depositing method.
    Type: Application
    Filed: November 5, 2015
    Publication date: March 3, 2016
    Applicant: Asahi Glass Company, Limited
    Inventors: Takahiro MASHIMO, Naoto KIHARA, Kazunobu MAESHIGE, Teruo FUJIWARA, Masahiro KISHI, Nobuhiro NAKAMURA, Mamoru ISOBE
  • Publication number: 20150235814
    Abstract: A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.
    Type: Application
    Filed: April 29, 2015
    Publication date: August 20, 2015
    Applicant: Asahi Glass Company, Limited
    Inventors: Hirotomo Kawahara, Nobutaka Aomine, Kazunobu Maeshige, Yuki Aoshima, Hiroshi Hanekawa
  • Patent number: 9097976
    Abstract: To provide an EUV mask blank with which the etching selectivity under etching conditions for absorber layer is sufficiently high, line edge roughness after pattern formation will not be large, and a pattern with high resolution can be obtained. A reflective mask blank for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light, an absorber layer for absorbing EUV light and a hard mask layer formed in this order on the substrate; wherein the absorber layer contains at least one of tantalum (Ta) and palladium (Pd) as the main component; the hard mask layer contains chromium (Cr), either one of nitrogen (N) and oxygen (O) and hydrogen (H); and in the hard mask layer, the total content of Cr and either one of N and O is from 85 to 99.9 at %, and the content of H is from 0.1 to 15 at %.
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: August 4, 2015
    Assignee: Asahi Glass Company, Limited
    Inventors: Kazuyuki Hayashi, Kazunobu Maeshige, Toshiyuki Uno
  • Patent number: 9086629
    Abstract: To provide a substrate with a conductive film for an EUV mask blank, which has a conductive film having a low sheet resistance, excellent surface smoothness and excellent contact to an electrostatic chuck, and with which deformation of the substrate by the film stress in an EUV mask blank can be suppressed. A substrate with a conductive film to be used for producing a reflective mask blank for EUV lithography, comprising a conductive film formed on a substrate; wherein the conductive film has at least two layers of a layer (lower layer) formed on the substrate side and a layer (upper layer) formed on the lower layer; and the lower layer of the conductive film contains chromium (Cr), oxygen (O) and hydrogen (H), and the upper layer of the conductive film contains chromium (Cr), nitrogen (N) and hydrogen (H).
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: July 21, 2015
    Assignee: Asahi Glass Company, Limited
    Inventors: Kazunobu Maeshige, Kazuyuki Hayashi, Toshiyuki Uno
  • Publication number: 20150103399
    Abstract: A method of producing a glass substrate having a first layer formed on a surface of the substrate by low-temperature CVD includes preparing the glass substrate and forming the first layer on the glass substrate by the low-temperature CVD. In the glass substrate after forming the first layer, an integrated value after a baseline correction in a wavenumber range of 2600 cm?1 to 3800 cm?1 in a peak due to OH groups obtained by an FTIR measurement on the first layer is 9.0 or less, and the C content of the first layer is 1.64 at % or less.
    Type: Application
    Filed: November 24, 2014
    Publication date: April 16, 2015
    Applicant: Asahi Glass Company, Limited
    Inventors: Hiroshi HANEKAWA, Nobutaka Aomine, Yuki Aoshima, Hirotomo Kawahara, Kazunobu Maeshige
  • Publication number: 20140335215
    Abstract: The present invention relates to a blank for a nanoimprint mold, comprising a glass substrate and a hard mask layer formed on the glass substrate, wherein the hard mask layer contains chromium (Cr) and nitrogen (N) and has a Cr content of 45 to 95 at %, an N content of 5 to 55 at % and a total content of Cr and N of 95 at % or more and the thickness of the hard mask layer is 1.5 nm or more and less than 5 nm.
    Type: Application
    Filed: July 23, 2014
    Publication date: November 13, 2014
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Kazuyuki Hayashi, Kazunobu Maeshige, Yasutomi Iwahashi
  • Publication number: 20140212794
    Abstract: To provide a process for producing an EUV mask blank, whereby the deformation of a substrate due to film stress in a Mo/Si multilayer reflective film can be reduced, and the change with time of the film stress in the Mo/Si multilayer reflective film can be reduced. A process for producing a reflective mask blank for EUVL, which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate, then forming an absorber layer for absorbing EUV light, on the multilayer reflective film, to produce a reflective mask blank for EUV lithography, wherein the multilayer reflective film is a Mo/Si multilayer reflective film, the uppermost layer of the multilayer reflective film is a Si film, and after forming the absorber layer, the substrate on which the absorber layer is formed is subjected to heating treatment at a temperature of from 110 to 170° C.
    Type: Application
    Filed: March 27, 2014
    Publication date: July 31, 2014
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Kazunobu MAESHIGE, Masaki MIKAMI