Abstract: Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode on a first main surface of the piezoelectric layer, wherein the support includes an air gap portion opened on a piezoelectric layer side, the support includes an inner side wall facing the air gap portion, and a high thermal conductive film is directly or indirectly laminated on at least a portion of a second main surface of the piezoelectric layer and extends to the inner side wall of the support.

Abstract: An acoustic wave device includes a support substrate having a thickness in a first direction, a piezoelectric layer on the support substrate, an interdigital transducer electrode on the piezoelectric layer and including first and second electrode fingers, the first electrode fingers extending in a second direction crossing the first direction, the second electrode fingers extending in the second direction and facing the first electrode fingers in a third direction orthogonal or substantially orthogonal to the second direction, and a reinforcing film on the piezoelectric layer. The support substrate and the piezoelectric layer include a hollow therebetween at a position overlapping the interdigital transducer electrode in the first direction. At least one through hole penetrates the piezoelectric layer at a position not overlapping the interdigital transducer electrode in the first direction, and the through hole communicates with the hollow. The reinforcing film overlaps the hollow in the first direction.

Abstract: An acoustic wave device includes a piezoelectric layer, electrodes, a support substrate, a resin sheet, a metallic frame, and an inorganic sheet. The electrodes oppose each other in an intersecting direction that intersects a thickness direction of the piezoelectric layer. The support substrate includes a first cavity extending through the support substrate so as to overlap at least a portion of the electrodes as viewed in the thickness direction. The resin sheet is arranged on a surface of the support substrate opposite to the piezoelectric layer to close the first cavity. The metallic frame includes a second cavity therein and surrounds the piezoelectric layer and the electrodes. The inorganic sheet is arranged on a surface of the metallic frame opposite to the piezoelectric layer to close the second cavity.

Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and first and second electrodes. The piezoelectric layer overlaps the support substrate in a first direction. The first and second electrodes extend over at least a first major surface of the piezoelectric layer. The first and second electrodes face each other and are at different potentials. A space between a second major surface of the piezoelectric layer and the support substrate is covered by the piezoelectric layer. The first and second electrodes each include an overlap portion overlapping the space in the first direction and a non-overlap portion not overlapping the space in the first direction. At least part of the support substrate includes an attenuation layer and overlaps a region between the non-overlap portions of the first and second electrodes in plan view. The attenuation layer and the support substrate have different crystallinities.

Abstract: An acoustic wave device includes a support substrate, an inorganic film over the support substrate, a piezoelectric layer over the inorganic film, and an electrode over the piezoelectric layer. A portion of the support substrate includes a hollow that overlaps at least a portion of the electrode in a thickness direction of the support substrate. An inner wall of the inorganic film is located farther from the hollow than a location on an inner wall of the support substrate, the location being closest to the piezoelectric layer, the inner wall of the support substrate defining the hollow.

Abstract: An acoustic wave device includes a support substrate, a piezoelectric layer, and a functional electrode. As seen in a first direction of the support substrate, the piezoelectric layer overlaps the support substrate. The functional electrode extends over a first major surface of the piezoelectric layer. A space is opposite to the first major surface of the piezoelectric layer and at or adjacent to a second major surface of the piezoelectric layer. In the first direction, the functional electrode extends over an overlap region that overlaps the space, and a non-overlap region that does not overlap the space. In the non-overlap region, at least one of an insulating film and a void is located between the functional electrode and the piezoelectric layer.

Abstract: An acoustic wave device includes a substrate, a functional element provided on the substrate, a cover layer provided on or above the substrate to cover the functional element, and a protection layer that covers the cover layer. The cover layer includes a curved portion that is curved to protrude outward. A hollow space is defined between the curved portion and the substrate, and the functional element is provided in the hollow space. The acoustic wave device also includes a conductive portion that is provided between the curved portion and the protection layer and extends along a surface of the curved portion.

Abstract: An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A2, B2, C2, and D2, defined as follows, are all outside the cavity when, at the points A2, B2, C2, and D2, xa>about 25 ?m, ya>about 25 ?m, xb>about 25 ?m, yb>about 25 ?m, xc>about 25 ?m, yc>about 25 ?m, xd>about 25 ?m, and yd>about 25 ?m.

Abstract: An acoustic resonator device includes a piezoelectric plate attached to a substrate. A portion of the piezoelectric plate forms a diaphragm suspended over a cavity in the substrate. A first conductor level includes first and second interdigital transducer (IDT) first-level busbars disposed along opposing sides of the diaphragm, and first and second sets of IDT fingers extending from the first and second busbars, respectively, wherein the first and second sets of IDT fingers are interleaved and disposed on the diaphragm. A second conductor level includes first and second second-level busbars that overlap at least a portion of the first and second busbars, respectively.

Abstract: An elastic wave device includes a piezoelectric film laminated on a first main surface of a support substrate including a recessed portion open to a first main surface. A cavity portion including the recessed portion is defined by the support substrate and the piezoelectric film. An electrode is on the piezoelectric film. The electrode includes first and second bus bars, a first electrode finger connected to the first bus bar, and a second electrode finger connected to the second bus bar. The first and second bus bars include corner portions inside the cavity portion when viewed in plan view. A curved portion as a pressure relaxation portion to relax pressure on the piezoelectric film at at least one of the corner portions of the first and second bus bars is provided between the corner portion and an outer edge of the cavity portion.

Abstract: A through-hole that extends from an upper surface of a cover opposite a support to a lower surface of the support facing a substrate is provided in the support and the cover. The through-hole overlaps a portion of a wiring line in a plan view. An acoustic wave device further includes an electrode film that is electrically connected to the wiring line in the through-hole, and a protective layer that includes an insulating material and that covers a portion of the electrode film. The protective layer is connected to the cover and the support in the through-hole. Differences in thermal expansion coefficients between the protective layer and the cover and between the protective layer and the support are smaller than a difference in thermal expansion coefficients between the protective layer and the electrode film.

Abstract: An electronic component includes a substrate, a functional element on the substrate, a first electrode, a support body that is made of an insulator, a cover portion, a second electrode, and a projection. The first electrode is located on the substrate and connected to the functional element. The support body protrudes from the substrate and covers the first electrode. The cover portion opposes the substrate, and a hollow space is defined by the substrate, the support body, and the cover portion. The second electrode is located in a via hole extending through the support body and the cover portion and electrically connected to the first electrode. The projection is located on the first electrode in the via hole.

Abstract: An electronic component includes a substrate, a functional element on the substrate, a support body, a covering portion, and a protective layer covering the covering portion. The support body is provided on the substrate and around a region in which the functional element is located. The covering portion faces the substrate and is supported by the support body. The substrate, the support body, and the covering portion define a hollow space. The functional element is located in the hollow space. In the support body, a surface opposite to a surface facing the substrate is a first surface, and a portion of the protective layer is in contact with the first surface of the support body without the covering portion being interposed.

Abstract: An information providing method is performed in an information providing system. The information providing method includes: acquiring pieces of speed information of a vehicle in association with identification information of an in-vehicle device from the in-vehicle device via roadside antennas, each of the pieces of speed information having been stored in the in-vehicle device each time the vehicle moves a prescribed distance before the vehicle passes by the roadside antennas; and causing an information display device to display evaluation information in association with the identification information, the evaluation information indicating a frequency of occurrence of sudden acceleration or deceleration events of the vehicle obtained from a proportion of differences between calculation values outside a threshold range, the calculation values being calculated on the basis of the pieces of speed information in a prescribed period corresponding to the pieces of speed information stored in the in-vehicle device.

Abstract: A control method of an insurance switching device in an embodiment is a control method of an insurance switching device including an input circuit and an output circuit. The control method of an insurance switching device in the embodiment includes: receiving, by the input circuit, input of duty information indicating a duty status of a user of a vehicle; receiving, by the input circuit, input of use information about a use situation of the vehicle; and outputting, by the output circuit, information indicating car insurance applied to the vehicle in accordance with the duty status of the user when the use information input into the input circuit indicates that the vehicle is in use.

Abstract: An acoustic wave device includes a functional electrode provided on a first main surface of a substrate, and a support provided on the substrate and surrounding a portion where the functional electrode is provided. A cover closes an opening of the support. The cover includes a resin layer and a metal layer that is integrated with the resin layer. The metal layer includes a first metal layer and a second metal layer, the first metal layer having a larger planar area than the second metal layer. The Young's modulus of the metal defining the second metal layer is higher than the Young's modulus of the metal defining the first metal layer. In a plan view, the first metal layer covers a hollow portion from above and the second metal layer discontinuously covers the hollow portion from above.

Abstract: A drive circuit includes an output circuit provided in a display panel to output a gate-on voltage and a gate-off voltage to a plurality of gate lines. The plurality of gate lines include first to sixth gate lines sequentially disposed in a scanning direction. A first transistor is put into an on state to electrically connect the first gate line and the third gate line, a second transistor is put into the on state to electrically connect the second gate line and the fourth gate line, the third transistor is put into the on state to electrically connect the third gate line and the fifth gate line, and the fourth transistor is put into the on state to electrically connect the fourth gate line and the sixth gate line, after the output circuit outputs the gate-on voltage to the first to fourth gate line.

Abstract: A first oxide semiconductor layer of a pixel TFT has a first structure in which a first source electrode and a first drain electrode have, at both end portions thereof, two types of reduction action regions formed by the first oxide semiconductor layer protruding outward in a channel width direction of a first channel portion from both the first source electrode and the first drain electrode. A second oxide semiconductor layer of a drive circuit TFT has a second structure formed without protruding outward in a channel width direction of a second channel portion from a second source electrode and a second drain electrode. A protective insulation film is provided to cover the first oxide semiconductor layer, the first source electrode, and the first drain electrode.

Abstract: An opening insulation film covers a substrate and is in contact with a side surface of a gate electrode. The opening insulation film is provided with a first opening portion having a side surface on the gate electrode. A gate insulation film made of an oxide insulator is on the gate electrode and the opening insulation film. A semiconductor channel film made of an oxide semiconductor is on the gate insulation film and is encompassed by the first opening portion. Source and drain electrodes are on the semiconductor channel film. A source upper-layer electrode and a drain upper-layer electrode both made of an oxide are provided at least on upper surfaces of the source electrode and the drain electrode, respectively. An interlayer insulation film made of an oxide has a portion provided on the source upper-layer electrode and the drain upper-layer electrode and is in contact the semiconductor channel film.