Abstract: A temporary adhesive film roll for substrate processing, includes: a roll axis and a composite film-shaped temporary-adhesive material for temporarily bonding a substrate to a support, the composite film-shaped temporary-adhesive material being rolled up around the roll axis; wherein the composite film-shaped temporary-adhesive material includes a first temporary adhesive layer composed of a thermoplastic resin, a second temporary adhesive layer composed of a thermosetting resin, and a third temporary adhesive layer composed of a thermosetting resin which is different from that of the second temporary adhesive layer.

Abstract: A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

Abstract: A laminate comprising a thermoplastic film and a positive resist film is provided, the positive resist film comprising (A) a novolak resin-naphthoquinone diazide (NQD) base resin composition, (B) a polyester, and (C) 3-30 wt % of an organic solvent. The resist film may be transferred to a stepped support without forming voids.

Abstract: A laminate is provided comprising a support, a resin layer, a metal layer, an insulating layer, and a redistribution layer. The resin layer comprises a photo-decomposable resin having light-shielding properties and has a transmittance of up to 20% with respect to light of wavelength 355 nm. The laminate is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Abstract: A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E? of 1-500 MPa at 25° C. and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Abstract: A silicone-modified polybenzoxazole resin comprising repeating units of formulae (1a) and (1b) is prepared by addition polymerization. R1 to R4 are a C1-C8 monovalent hydrocarbon group, m and n are integers of 0-300, R5 is C1-C8 alkylene or phenylene, a and b are positive numbers of less than 1, a+b=1, and X1 is a divalent linker of formula (2). The resin is flexible, soluble in organic solvents, and easy to use.

Abstract: A photosensitive resin composition comprising (A) a silicone-modified polybenzoxazole resin and (B) a photoacid generator which is decomposed to generate an acid upon exposure to radiation of 190-500 nm is coated onto a substrate to form a thick coating, which is exposed to radiation, baked, and developed to form a pattern. The resin coating is capable of forming a fine pattern and has improved crack resistance and other film properties, and reliability.

Abstract: A flame retardant resin composition comprising (A) a silicone resin, (B) a triazine-modified phenol novolak compound, and (C) a filler can be formed in film form. The resin film possesses satisfactory covering or encapsulating performance to large size/thin wafers.

Abstract: A film-forming resin composition for use in encapsulating large-diameter thin-film wafers includes (A) a silicone resin having a weight-average molecular weight of 3,000 to 500,000 and containing repeating units of formula (1) wherein R1 to R4 are monovalent hydrocarbon groups, but R3 and R4 are not both methyl, m and n are integers of 0 to 300, R5 to R8 are divalent hydrocarbon groups, a and b are positive numbers such that a+b=1, and X is a specific divalent organic moiety; (B) a phenolic compound of formula (7) wherein Y is a carbon atom or a tetravalent hydrocarbon group of 2 to 20 carbon atoms, and R13 to R16 are monovalent hydrocarbon groups or hydrogen atoms; and (C) a filler.

Abstract: A laminate comprising a thermoplastic film and a chemically amplified positive resist film thereon is provided, the resist film comprising (A) a base polymer having a hydroxyphenyl group and a protective group, the polymer turning alkali soluble as a result of the protective group being eliminated under the action of acid, (B) a photoacid generator, (C) an organic solvent, and (D) a polymer having an ester bond in its backbone. The resist film may be transferred to a stepped support without forming voids.

Abstract: A film-like wafer mold material for molding a wafer in a lump, the material including a multilayer structure constituted of at least a first film layer and a second film layer provided on the first film layer, wherein the first film layer contains a silicone-backbone-containing polymer, a cross-linking agent, and a filler, and the second film layer, contains a silicone-backbone-containing polymer and a cross-linking agent, and further contains a filler in such a manner that a content rate of the filler becomes 0 or above and less than 100 when a content rate of the filler contained in the first film layer is assumed to be 100. The film-like wafer mold material has excellent transference performance with respect to a thin-film wafer with a large diameter, also has low-warp properties and excellent wafer protection performance after form shaping (after molding), and is preferably used for a wafer level package.

Abstract: The present invention relates to a resin composition containing components (A), (B), and (C), component (A) being a silicone resin having a weight-average molecular weight of 3,000-500,000 and having constituent units represented by compositional formula (1), component (B) being an epoxy resin curing agent, and component (C) being a filler. The present invention is capable of providing a resin film and a resin composition whereby wafers can be molded (wafer molding) in batch fashion, the resin composition having good molding properties with respect to large-diameter thin-film wafers in particular while at the same time imparting low warpage after molding and good wafer-protective ability, the resin composition also facilitating the molding step and being suitable for use in wafer-level packaging.

Abstract: The present invention provides a silicone skeleton-containing polymer including a silicone skeleton shown by the following formula (1) and having a weight average molecular weight of 3,000 to 500,000. This can provide a silicone skeleton-containing polymer that can easily form a fine pattern with a large film thickness, and can form a cured material layer (cured film) that is excellent in various film properties such as crack resistance and adhesion properties to a substrate, electronic parts, and a semiconductor device, particularly a base material used for a circuit board, and has high reliability as a film to protect electric and electronic parts and a film for bonding substrates; and a photo-curable resin composition that contains the polymer, a photo-curable dry film thereof, a laminate using these materials, and a patterning process.

Abstract: The present invention provides a resin composition including: (A) a silicone resin containing a constitutional unit shown by the following composition formula (1) and having a weight average molecular weight of 3,000 to 500,000; (B) an epoxy resin-curing agent; and (C) a filler; wherein the mass fraction of the component (C) is 50 to 95% by mass based on the total mass. This can provide a resin composition that can mold a wafer in a lump, has good molding properties particularly to a thin-film wafer having a large diameter, gives low-warping properties, as well as good wafer protection properties, high reliability, and good heat resistance after molding, can perform a molding process favorably, and can be used for wafer level packaging favorably.

Abstract: The present invention provides a resin composition including: (A) a silicone resin containing a constitutional unit shown by the following composition formula (1) and having a weight average molecular weight of 3,000 to 500,000, (B) an epoxy resin-curing agent; and (C) a filler. This can provide a resin composition and a resin film that can mold a wafer in a lump, has good molding properties particularly to a thin-film wafer having a large diameter, gives low-warping properties, as well as good wafer protection performance, good adhesion properties, high reliability, and good heat resistance after molding, can perform a molding process favorably, and can be used for wafer level packaging favorably. The present invention also provides a method for producing the resin film, a semiconductor device molded with the resin film, and a method for producing the semiconductor device.

Abstract: A surface protective film comprising a base film and a resin film thereon can be bonded to a substrate having a circuit-forming surface and separated therefrom after processing. The resin film is formed of a resin composition comprising (A) a silphenylene-siloxane skeleton-containing resin, (B) a compound capable of reacting with an epoxy group in the resin to form a crosslinked structure, (C) a curing catalyst, and (D) a parting agent.

Abstract: First, in a primary sintering step, a manufacturing system 1 for a sliding member 2 laminates and thereby forms a sintered alloy layer 4 on back metal 3. Subsequently, a large number of indents 5 are formed on a front surface of the sintered alloy layer 4 by an indent-forming mechanism 14. Next, the back metal 3 and sintered alloy layer 4 are rolled by a reduction roll 15 and a secondary sintering process is applied to the sintered alloy layer 4. Consequently, the sliding member 2 is manufactured with the large number of indents 5 provided on a front surface. Since the indents 5 are formed on the sintered alloy layer 4 after the primary sintering step, it is possible to inhibit work hardening from occurring in the indents 5 and surrounding areas.

Abstract: A flame retardant resin composition comprising (A) a silicone resin, (B) a triazine-modified phenol novolak compound, and (C) a filler can be formed in film form. The resin film possesses satisfactory covering or encapsulating performance to large size/thin wafers.

Abstract: A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Abstract: A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.