Abstract: The ZnO-type compound contains at least one metal selected from a group of transition elements consisting of V, Cr, Fe, Co, Ni, Rh and Ru. Ferromagnetic characteristics are adjusted by adjusting densities of these transition elements, by varying combinations of two or more types of metals including Mn, or by adding dopants. It is consequently possible to obtain a ferromagnetic ZnO-type compound exhibiting ferromagnetic characteristics by using a light-transmitting ZnO-type compound, and to obtain a ferromagnetic ZnO-type compound exhibiting desired ferromagnetic characteristics.

Abstract: A surface-coated cutting tool member includes a tungsten carbide based cemented carbide substrate, a titanium carbonitride based cermet substrate, or a cubic boron nitride based sintered substrate; and a hard coating layer of a nitride compound containing aluminum and titanium, formed on a surface of the substrate using a physical vapor deposition method in an overall average thickness of 1 to 15 ?m. The hard coating layer has a component concentration profile in which maximum aluminum containing points and minimum aluminum containing points appear alternatingly and repeatedly at a distance from 0.01 to 0.1 ?m in a direction of thickness of the hard coating layer. The amount of contained aluminum (or titanium) is changed from the maximum aluminum containing points to the minimum aluminum containing points. The maximum aluminum containing points satisfy a formula: (AlXTi1?X)N, wherein X is between 0.70 to 0.95. The minimum aluminum containing points satisfy a formula: (AlYTi1?Y)N, wherein Y is between 0.

Abstract: Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect derived from a p-i-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure having a p-type half-metallic ferromagnetic semiconductor, an n-type half-metallic ferromagnetic semiconductor and at least one atomic layer of nonmagnetic insulator interposed therebetween, or a rectification effect derived from a p-n type low-resistance tunneling-magnetoresistance-effect (low-resistance TMR) diode with a structure devoid of the interposed atomic layer of nonmagnetic insulator.

Abstract: It is an object of the invention to provide a portable type electronic apparatus including a hinge portion having a rotating function in a plurality of directions, wherein two casings can be held stably without shaking in a state in which they are opened. A portable type electronic apparatus (101) includes a hinge portion (30) for coupling a first casing (10) and a second casing (20) in such a manner that both of the casings can be opened and closed through a first rotating axis (31) and the first casing (10) can be rotated through a second rotating axis (32) in an orthogonal direction to the first rotating axis (31).

Abstract: Disclosed is a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor, comprising a group IV-based semiconductor or a group III-V-based or group II-VI-based compound semiconductor, which contains at least one rare-earth metal element selected from the group consisting of Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu. The ferromagnetic characteristic of the ferromagnetic semiconductor is controlled by adjusting the concentration of the rare-earth metal element, combining two or more of the rare-earth metal elements or adding a p-type or n-type dopant. The present invention can provide a ferromagnetic group IV-based semiconductor or a ferromagnetic group III-V-based or group II-VI-based compound semiconductor which exhibits light transparency and stable ferromagnetic characteristics.

Abstract: A focusing electrode includes an electric field correcting electrode, and a peripheral electrode in which one electron beam passage aperture is formed on a surface opposed to a final-stage accelerating electrode. The final-stage accelerating electrode includes an electric field correcting electrode, and a peripheral electrode in which one electron beam passage aperture is formed on a surface opposed to the focusing electrode.

Abstract: The present invention provides a single-crystal ZnO thin film having a high ferromagnetic transition temperature. In one aspect of the present invention, the ZnO thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal element consisting of Mn, and a p-type dopant. In another aspect of the present invention, the thin film comprises a ferromagnetic p-type single-crystal zinc oxide including a transition metal element consisting of Mn, a p-type dopant, and an n-type dopant. The single-crystal zinc oxide material can be applied to quantum computers and high-capacity magnetic-optical recording medium by combining with conventional n-type or p-type transparent electrode ZnO materials or optical fibers, and to powerful information-communication devices or quantum computers as a photoelectric material usable for a wide range from visible light to ultraviolet light.

Abstract: A power unit includes a power source, a load, and a step-up circuit that connects the power source and the load. The step-up circuit includes a plurality of voltage step-up circuits. The voltage step-up circuits step up a voltage of the power source to a predetermined voltage, and apply the predetermined voltage to the load; A voltage control unit controls the voltage step-up circuits, and controls a power feedback unit to feed back power from the load to the power source when a voltage of the load detected by a voltage detecting unit exceeds the predetermined voltage.

Abstract: A method (and mobile terminal incorporating the same) of carrying out reception decision uses a signal received from a base station in a mobile terminal. A receiver unit receives a signal transmitted from a base station, and outputs a reception data which has been frequency-converted. A communication parameter calculating unit calculates at least one of a target SIR, a finger number, and a CPICH-RSCP as a communication parameter. A decision parameter setting unit sets a decision parameter based on any one or more of a target SIR, a finger number, and a CPICH-RSCP calculated as the communication parameter by the communication parameter calculating unit, and outputs the decision parameter to a reception decision unit. The reception decision unit sets an SIR reference value, a BER reference value, a reception decision period, or the like based on the communication parameter, and carries out a reception decision in dealing with an SIR obtained from the reception data.

Abstract: An SIR measurement unit measures SIR based on a received signal. A velocity detection unit detects the moving velocity of a mobile station. A synchronization determination processing unit determines whether or not the detected moving velocity is larger than a velocity detection threshold value. If it is determined that the detected moving velocity is larger than the velocity detection threshold value, then the synchronization determination processing unit changes an SIR threshold value to a larger value. Also, if it is determined that the detected moving velocity is not larger than the velocity detection threshold value, then the synchronization determination processing unit changes the SIR threshold value to a smaller value. Then, the synchronization determination processing unit performs the synchronization determination by comparing the measured SIR with the changed SIR threshold value.

Abstract: Disclosed is a spin-based semiconductor laser source capable of generating a completely circularly polarized laser light by injecting current into p-type and n-type half-metal magnetic semiconductor layers. Each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by doping a magnetic semiconductor with a transition metal atom and optionally with an acceptor or donor. Alternatively, each of the p-type and n-type half-metal magnetic semiconductor layers is prepared by providing a gate to a magnetic semiconductor and adjusting/controlling its ferromagnetic state according to the field effect. The present invention can solve the problem concerning the insufficient degree of circular polarization in conventional circular-polarization semiconductor laser sources.

Abstract: The ZnO-type compound contains at least one metal selected from a group of transition elements consisting of V, Cr, Fe, Co, Ni, Rh and Ru. Ferromagnetic characteristics are adjusted by adjusting densities of these transition elements, by varying combinations of more than two types of metals including Mn, or by adding dopants. It is consequently possible to obtain a ferromagnetic ZnO-type compound exhibiting ferromagnetic characteristics by using a light-transmitting ZnO-type compound, and to obtain a ferromagnetic ZnO-type compound exhibiting desired ferromagnetic characteristics.

Abstract: The invention provides a coated cutting tool made of cemented carbide in which a hard coating layer has excellent wear resistance in high-speed cutting operation, wherein (a) a crystal orientation hysteresis layer which consists of a carbonitride compound layer and (b) a hard coating layer which consists of a layer of nitride compound and has a well defined crystal orientation and/or degree of crystallinity are formed on the surface of a cemented carbide substrate, preferably on the surface of a tungsten carbide based cemented carbide or titanium carbonitride based cermet by physical vapor deposition, wherein the crystal orientation hysteresis layer is deposited between the surface of a cemented carbide substrate and the hard coating layer. In one specific example, (a1) the carbonitride compound layer has an average thickness of 0.05 to 0.5 ?m and is preferably a Ti—Al carbonitride compound layer expressed by the composition formula as (Ti1?XAlX)(N1?YCY), wherein X ranges from 0.05 to 0.

Abstract: The present invention provides a large transport ship in which the shape of a ship bottom 1a from a bow 1h to a stern 1t, when viewed on a cross-section perpendicular to the longitudinal direction of the ship bottom 1a, is tapered towards the center CL of the ship bottom in the widthwise direction. Consequently, it is possible to resolve problems associated with changes in the draft corresponding to the state of the load, without using ballast water.

Abstract: A new and distinct cultivar of Begonia plant named ‘Gum Drop Red’, characterized by its compact, upright and uniform plant habit; freely branching growth habit, dense and bushy growth habit; green-colored leaves; freely flowering habit with numerous flowers per plant; and small mostly double flowers that are red in color and held above and beyond the foliage.

Abstract: A new and distinct cultivar of Begonia plant named ‘Gum Drop Cherry Blossom’, characterized by its compact, upright and uniform plant habit; freely branching growth habit, dense and bushy growth habit; green-colored leaves; freely flowering habit with numerous flowers per plant; and small mostly double flowers that are white and pink bi-colored and held above and beyond the foliage.

Abstract: A new and distinct cultivar of Begonia plant named ‘Gum Drop Pink’, characterized by its compact, upright and uniform plant habit; freely branching growth habit, dense and bushy growth habit; green-colored leaves; freely flowering habit with numerous flowers per plant; and small mostly double flowers that are pink in color and held above and beyond the foliage.

Abstract: A new and distinct cultivar of Begonia plant named ‘Gum Drop White’, characterized by its compact, upright and uniform plant habit; freely branching growth habit, dense and bushy growth habit; green-colored leaves; freely flowering habit with numerous flowers per plant; and small mostly double flowers that are white in color and held above and beyond the foliage.

Abstract: A new and distinct cultivar of Begonia plant named ‘Gum Drop Mandarin’, characterized by its compact, upright and uniform plant habit; freely branching growth habit, dense and bushy growth habit; green-colored leaves; freely flowering habit with numerous flowers per plant; and small mostly double flowers that are light red in color and held above and beyond the foliage.

Abstract: A new and distinct cultivar of Begonia plant named ‘Gum Drop Rose’, characterized by its compact, upright and uniform plant habit; freely branching growth habit, dense and bushy growth habit; green-colored leaves; freely flowering habit with numerous flowers per plant; and small mostly double flowers that are dark pink in color and held above and beyond the foliage.