Abstract: According to an embodiment, a resolver rotor includes: a resolver rotor core; and a resolver rotor core holder that constrains the resolver rotor core to a rotor shaft in a circumferential direction and an axial direction. The resolver rotor core holder includes: an annular flat plate portion; a first constraining portion that holds a relative position of the resolver rotor core holder to the rotor shaft, and holds an angle of the resolver rotor core in the circumferential direction relative to the rotor shaft; a second constraining portion that holds a relative position of the resolver rotor core holder to the rotor shaft; and a third constraining portion that holds a relative position of the resolver rotor core in the axial direction to the rotor shaft. The resolver rotor core includes a radially inside recessed portion for engagement with the first constraining portion.

Abstract: A defect detection device including an illumination optical system, an image capturing optical system configured to capture an image of scattered light generated by the illumination optical system irradiating the wafer, and an image processing unit configured to process a picture of the image of the scattered light to extract a defect on the wafer. The image capturing optical system includes an objective lens, a filter unit configured to shield a part of light transmitted through the objective lens, and an imaging lens configured to form an image of light transmitted through the filter unit. The filter unit includes a first microlens array configured to condense parallel light transmitted through the objective lens, a shutter array including a light transmission unit at a focus position of the first microlens array, and a second microlens array disposed opposite to the first microlens array with respect to the shutter array.

Abstract: A field-effect transistor includes a Ga2O3-based semiconductor layer, a source region and a drain region that are formed inside the Ga2O3-based semiconductor layer, a gate electrode that is formed, via a gate insulating film, on a channel region as the Ga2O3-based semiconductor layer between the source region and the drain region, a source electrode connected to the source region, and a drain electrode connected to the drain region. An interface charge including a negative charge is formed between the gate electrode and the channel region, and a gate threshold voltage is not less than 4.5V.

Abstract: According to one embodiment, a rotor core satisfies a relationship: W2/W1?(A1+A2)/A1. Where, A1 represents an area of a region defined by a polar central axis, an outer circumferential surface of the rotor core and a first imaginary linear line extending on an outer circumferential-side long edge of an embedding hole, A2 represents an area of a region defined by the polar central axis, a q-axis, the outer circumferential surface of the rotor core, a second imaginary linear line extending on an inner circumferential-side long edge of the embedding hole, a third imaginary linear line extending on a first edge of the cavity hole, W1 represents a half-width of a first bridge portion, and W2 represents a half-width of the second bridge portion.

Abstract: There is provided a charged particle beam apparatus that can reduce the processing time. A charged particle beam apparatus includes: an excitation control unit that controls a focal position by changing a control value of excitation of an electronic lens; an electrostatic field control unit that controls the focal position by changing a control value of an electrostatic field; a focal position height estimation unit that estimates a height of the focal position from the control value of the excitation of the electronic lens; and a control unit that controls the excitation control unit and the electrostatic field control unit. The control unit compares the height of the focal position estimated by the focal position height estimation unit with a height of a sample surface of a sample to be observed, and according to a result of comparison, determines whether it is necessary to change the control value of the excitation of the electronic lens before observing the sample.

Abstract: A defect detection device including an illumination optical system, an image capturing optical system configured to capture an image of scattered light generated by the illumination optical system irradiating the wafer, and an image processing unit configured to process a picture of the image of the scattered light to extract a defect on the wafer. The image capturing optical system includes an objective lens, a filter unit configured to shield a part of light transmitted through the objective lens, and an imaging lens configured to form an image of light transmitted through the filter unit. The filter unit includes a first microlens array configured to condense parallel light transmitted through the objective lens, a shutter array including a light transmission unit at a focus position of the first microlens array, and a second microlens array disposed opposite to the first microlens array with respect to the shutter array.

Abstract: There is provided a charged particle beam apparatus that can reduce the processing time. A charged particle beam apparatus includes: an excitation control unit that controls a focal position by changing a control value of excitation of an electronic lens; an electrostatic field control unit that controls the focal position by changing a control value of an electrostatic field; a focal position height estimation unit that estimates a height of the focal position from the control value of the excitation of the electronic lens; and a control unit that controls the excitation control unit and the electrostatic field control unit. The control unit compares the height of the focal position estimated by the focal position height estimation unit with a height of a sample surface of a sample to be observed, and according to a result of comparison, determines whether it is necessary to change the control value of the excitation of the electronic lens before observing the sample.

Abstract: A field-effect transistor includes a Ga2O3-based semiconductor layer, a source region and a drain region that are formed inside the Ga2O3-based semiconductor layer, a gate electrode that is formed, via a gate insulating film, on a channel region as the Ga2O3-based semiconductor layer between the source region and the drain region, a source electrode connected to the source region, and a drain electrode connected to the drain region. An interface charge including a negative charge is formed between the gate electrode and the channel region, and a gate threshold voltage is not less than 4.5V.

Abstract: According to one embodiment, a rotor core satisfies a relationship: W2/W1 (A1+A2)/A1. Where, A1 represents an area of a region defined by a polar central axis, an outer circumferential surface of the rotor core and a first imaginary linear line extending on an outer circumferential-side long edge of an embedding hole, A2 represents an area of a region defined by the polar central axis, a q-axis, the outer circumferential surface of the rotor core, a second imaginary linear line extending on an inner circumferential-side long edge of the embedding hole, a third imaginary linear line extending on a first edge of the cavity hole, W1 represents a half-width of a first bridge portion, and W2 represents a half-width of the second bridge portion.

Abstract: A phosphor-containing member includes a transparent member, and a plurality of granular single crystal phosphors dispersed in the transparent member. Each of the plurality of granular single crystal phosphors includes a YAG crystal as a mother crystal. The plurality of granular single crystal phosphors are prepared by crushing the YAG crystal. The YAG crystal has a composition represented by a formula of Y3-x-yGdxCeyAl5O12-w (0.03?x?0.2, 0.003?y?0.2, ?0.2?w?0.2). Reduction of fluorescence intensity of the phosphors is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25° C. to 100° C.

Abstract: As one of purposes, the present invention provides: a single-crystal phosphor which can exhibit excellent properties under high-temperature conditions; and a light-emitting device in which the phosphor is used. As one embodiment, a single-crystal phosphor is provided, which has a chemical composition represented by the compositional formula: Y1-x-y-zLuxGdyCez)3+aAl5-aO12(0?x?0.9994, 0?y?0.0669, 0.0002?z?0.0067,?0.016?a?0.315).

Abstract: A phosphor-containing member includes a transparent member, and particles of a single crystal phosphor dispersed in the transparent member. The single crystal phosphor has a composition represented by a compositional formula (Y1?a?bLuaCeb)3+cAl5?cO12 (where 0?a?0.9994, 0.0002?b?0.0067, ?0.016?c?0.315), and Commission International de l'Eclairage (CIE) chromaticity coordinates x, y of an emission spectrum satisfy a relationship of ?0.4377x+0.7384?y??0.4377x+0.7504 when a peak wavelength of excitation light is 450 nm and temperature is 25° C.

Abstract: Provided is a defect detection device including an illumination unit including a condenser lens and a plurality of light beam synthesis units, and a detection unit detecting scattered light generated on a sample by the illumination unit. The condenser lens condenses a plurality of light beams, emitted onto the sample and having substantially the same wavelength and substantially the same polarization, on the sample. The plurality of light beam synthesis units bring the plurality of light beams close to each other and make the light beams have light paths parallel to the optical axis of the condenser lens.

Abstract: A defect observation apparatus includes a storage unit configured to store defect information about defects detected by an external inspection apparatus; a first imaging unit configured to capture an image of a defect using a first imaging condition and a second imaging condition; a control unit configured to correct positional information on the defect using the image captured with the first imaging unit; and a second imaging unit configured to capture an image of the defect based on the corrected positional information.

Abstract: A filament which can give an arbitrary hardness to a three-dimensional molded object and is not bent in a conveying process and a method of manufacturing the same are provided. In the present invention, a filament used as a material of a printed matter printed by a three-dimensional printing device using a fused deposition modeling method (FDM) is configured to contain a polylactic acid resin and a thermoplastic elastomer.

Abstract: According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

Abstract: The objective of the present invention is to simultaneously achieve image observations at a high resolution using an electron microscope, and X-ray analysis at a high energy-resolution using a microcalorimeter. An X-ray detector is disposed at a position where the intensity of the magnetic field from an objective lens is weaker than the critical magnetic field of a material used in a thermal insulation shield for a superconducting transition-edge sensor or a microcalorimeter. In addition, an optical system for transmitting X-rays to the detector is inserted between a sample and the detector. Alternatively, a magnetic field shield for shielding the X-ray detector is used.

Abstract: The objective of the present invention is to simultaneously achieve image observations at a high resolution using an electron microscope, and X-ray analysis at a high energy-resolution using a microcalorimeter. An X-ray detector is disposed at a position where the intensity of the magnetic field from an objective lens is weaker than the critical magnetic field of a material used in a thermal insulation shield for a superconducting transition-edge sensor or a microcalorimeter. In addition, an optical system for transmitting X-rays to the detector is inserted between a sample and the detector. Alternatively, a magnetic field shield for shielding the X-ray detector is used.

Abstract: Provided is a defect detection device including an illumination unit including a condenser lens and a plurality of light beam synthesis units, and a detection unit detecting scattered light generated on a sample by the illumination unit. The condenser lens condenses a plurality of light beams, emitted onto the sample and having substantially the same wavelength and substantially the same polarization, on the sample. The plurality of light beam synthesis units bring the plurality of light beams close to each other and make the light beams have light paths parallel to the optical axis of the condenser lens.

Abstract: A flat plate-shaped phosphor member includes a plurality of granular single crystal phosphors, each of which including a YAG crystal as a mother crystal, the YAG crystal having a composition represented by a formula of Y3-x-yGdxCeyAl5O12-w (0.03?x?0.2, 0.003?y?0.2, ?0.2?w?0.2). Reduction of fluorescence intensity of the phosphor is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25° C. to 100° C.