Abstract: A semiconductor device which can prevent a deterioration in the electrical properties by preventing sputters generated by laser welding from adhering to a circuit pattern or a semiconductor chip and a method for fabricating such a semiconductor device are provided. A connection conductor is bonded to a copper foil formed over a ceramic by a solder and resin is injected to a level lower than a top of the connection conductor. Laser welding is then performed. After that, resin is injected. This prevents sputters generated by the laser welding from adhering to a circuit pattern or a semiconductor chip. As a result, a deterioration in the electrical properties can be prevented.

Abstract: A method, system and computer-readable medium are presented for computer-based supervised classification of digital documents that can exclusively identify an optimal category for the single class model by dividing a calculated score of each category into groups (thresholds can be automatically decided from the knowledge base) and can further predict whether it will be subjected to human examination and whether feedback learning should be performed.

Abstract: A semiconductor element includes a substrate including gallium oxide and having a predetermined plane direction, and a semiconductor layer formed on the substrate, in which, the semiconductor element is in chip form and further includes a first end face formed along a cleaved surface of the substrate and a second end face formed perpendicular to the first end face, wherein the first end face has a stronger cleavage property than the second end face.

Abstract: An electrical connection structure that includes a first connection portion of the connection member that is fixedly fastened to the first terminal by a fastening bolt, and a second connection portion of the connection member that is connected to the second terminal through an insertable/removable plug, the first connection portion is fixedly fastened to the first terminal by inserting the fastening bolt through an insertion hole provided in one of the connection member and the first terminal, and fastening the fastening bolt in a fastening hole provided in the other of the connection member and the first terminal, the insertion hole is formed larger than a diameter of a shaft-like portion of the fastening bolt, and an inserting/removing direction of the plug and an axial direction of the fastening bolt are substantially parallel to each other.

Abstract: A scanning electron microscope for digitally processing an image signal to secure the largest focal depth and the best resolution in accordance with the magnification for observation is disclosed. The angle of aperture of an optical system having a plurality of convergence lenses is changed by changing the convergence lenses and the hole diameter of a diaphragm. The angle ? of aperture of the electron beam is changed in accordance with the visual field range corresponding to a single pixel, i.e. what is called the pixel size.

Abstract: A rotary electric machine control device includes a positive/negative determination section that determines whether an output torque of the rotary electric machine is positive or negative; a correction parameter setting section that sets as a correction parameter a phase difference of a sinusoidal ripple correction wave for reducing torque ripple of the rotary electric machine with respect to a magnetic pole position of the rotary electric machine depending on whether the output torque is positive or negative; and a correction wave generation section that generates the ripple correction wave on the basis of the correction parameter.

Abstract: The present invention provides a method of correcting coordinates so as to quickly and properly arrange a sample in a field of view in a review apparatus for moving a sample stage onto the specified coordinates to review the sample. A review apparatus according to the present invention, which is a review apparatus for moving a sample stage onto coordinates previously calculated by a checking apparatus to review the sample, has a function of retaining a plurality of coordinate correction tables to correct a deviation between a coordinate value previously calculated by a checking apparatus and an actual sample position detected by the review apparatus. The review apparatus evaluates correction accuracy of the plurality of coordinate correction tables and applies one of the coordinate correction tables with the maximum evaluation value.

Abstract: To provide a Ga2O3 compound semiconductor device in which a Ga2O3 system compound is used as a semiconductor, which has an electrode having ohmic characteristics adapted to the Ga2O3 system compound, and which can make a heat treatment for obtaining the ohmic characteristics unnecessary. An n-side electrode 20 including at least a Ti layer is formed on a lower surface of an n-type ?-Ga2O3 substrate 2 by utilizing a PLD method. This n-side electrode 20 has ohmic characteristics at 25° C. The n-side electrode 20 may have two layer including a Ti layer and an Au layer, three layers including a Ti layer, an Al layer and an Au layer, or four layers including a Ti layer, an Al layer, a Ni layer and an Au layer.

Abstract: A semiconductor module includes a base plate whose one surface is formed with a fin region in which a cooling fin is provided; a substrate that is disposed on the other surface of the base plate and provided with a switching device; and a case member having an internal space an opening formed in one wall of the case member so that the opening is smaller than the one surface of the base plate and larger than the fin region.

Abstract: A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate.

Abstract: A semiconductor module includes a base plate; a plurality of substrates placed on one surface of the base plate, with each substrate of the plurality of substrates including a switching element, a diode element, and a connection terminal area; and a parallel flow forming device that forms parallel coolant flow paths that are provided so as to be in contact with the other surface of the base plate. The coolant flow paths are formed such that coolant flows in a coolant flow direction.

Abstract: A semiconductor module includes a base plate; a plurality of substrates placed on one surface of the base plate, with each substrate of the plurality of substrates including a switching element, a diode element, and a connection terminal area; and a parallel flow forming device that forms parallel coolant flow paths that are provided so as to be in contact with the other.

Abstract: The present invention provides a method of correcting coordinates so as to quickly and properly arrange a sample in a field of view in a review apparatus for moving a sample stage onto the specified coordinates to review the sample. A review apparatus according to the present invention, which is a review apparatus for moving a sample stage onto coordinates previously calculated by a checking apparatus to review the sample, has a function of retaining a plurality of coordinate correction tables to correct a deviation between a coordinate value previously calculated by a checking apparatus and an actual sample position detected by the review apparatus. The review apparatus evaluates correction accuracy of the plurality of coordinate correction tables and applies one of the coordinate correction tables with the maximum evaluation value.

Abstract: The search apparatus of the present invention searches for a document corresponding to a specified search term from among a plurality of documents, and includes a search term pair generation unit for generating at least one search term pair including a first search string with a length equal to the number of index characters and a second search string with a length equal to the number of index characters located at a position shifted by a predetermined number of offset characters relative to the first search string, which are included in the search term, a search unit for searching, for each search term pair, an index database for a document which has both of the first search string and the second search string as indexing terms, a calculation unit for calculating a score of each document on the basis of a frequency of occurrence of the first search string and the second search string of each search term pair included in each document, and a selection unit for selecting a document to be outputted as a search

Abstract: A heat generating member cooling structure in which a coolant space is formed between a heat releasing surface that is thermally connected to a heat generating member and an opposing surface that is positioned opposite the heat releasing surface, includes a plurality of heat releasing fins that are provided within the coolant space so as to be parallel to one another and stand from the heat releasing surface toward the opposing surface, and an inter-fin passage, through which a coolant flows, formed between every two of the plurality of heat releasing fins that are positioned adjacent to each other.

Abstract: To provide a method of controlling a conductivity of a Ga2O3 system single crystal with which a conductive property of a ?-Ga2O3 system single crystal can be efficiently controlled. The light emitting element includes an n-type ?-Ga2O3 substrate, and an n-type ?-AlGaO3 cladding layer, an active layer, a p-type ?-AlGaO3 cladding layer and a p-type ?-Ga2O3 contact layer which are formed in order on the n-type ?-Ga2O3 substrate. A resistivity is controlled to fall within the range of 2.0×10?3 to 8×102 ?cm and a carrier concentration is controlled to fall within the range of 5.5×1015 to 2.0×1019/cm3 by changing a Si concentration within the range of 1×10?5 to 1 mol %.

Abstract: A method for growing a ?-Ga2O3 single includes preparing a ?-Ga2O3 seed crystal and growing the ?-Ga2O3 single crystal from the ?-Ga2O3 seed crystal in a predetermined direction.

Abstract: An electrical connection structure that includes a first connection portion of the connection member that is fixedly fastened to the first terminal by a fastening bolt, and a second connection portion of the connection member that is connected to the second terminal through an insertable/removable plug, the first connection portion is fixedly fastened to the first terminal by inserting the fastening bolt through an insertion hole provided in one of the connection member and the first terminal, and fastening the fastening bolt in a fastening hole provided in the other of the connection member and the first terminal, the insertion hole is formed larger than a diameter of a shaft-like portion of the fastening bolt, and an inserting/removing direction of the plug and an axial direction of the fastening bolt are substantially parallel to each other.

Abstract: The invention can include a token list generating unit 11 for decomposing a natural language text to be processed into tokens that are components of the natural language text and registering them on a token list, and a token string selecting unit 13 for selecting optimum token strings for composing the natural language text to be processed on the basis of the token list generated by the token list generating unit 11. The token list generating unit 11 registers, on the token list, tokens among the tokens obtained by decomposing the natural language text to be processed except tokens decomposable into smaller tokens according to conditions imposed on the morphological analysis.

Abstract: A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (AlxInyGa(1?X?Y))2O3 where 0?x?1, 0?y?1 and 0?x+y?1. The pn-junction has first conductivity type substrate, and GaN system compound semiconductor thin film of second conductivity type opposite to the first conductivity type.