Patents by Inventor Kazuo Matsuzaki
Kazuo Matsuzaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5604383Abstract: A stabilized power supply device includes a substrate and a passive part laminate layered on the substrate. The passive part laminate, shaped as a single flat board, includes a thin charge storage film element. A thin magnetic inductive film element is laminated on the thin charge storage film element. The device also includes an active part incorporated in a flip chip. The flip chip, including semiconductors and bump electrodes, is mounted on an upper surface of the passive part laminate. The upper surface of the passive part laminate includes terminals for connecting the passive part laminate to the bump electrodes. This connection also fixes the active part to the passive part laminate.Type: GrantFiled: May 11, 1995Date of Patent: February 18, 1997Assignee: Fuji Electric Co., Ltd.Inventor: Kazuo Matsuzaki
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Patent number: 5592081Abstract: A compact Hall element having a high magnetic sensitivity, a wide measuring range and which is resistant to application conditions such as high temperatures or radiations, includes a rectangular recess formed in a surface layer of an insulator layer, a negative electrode for emitting electrons and a positive electrode for collecting the electrons provided on the surface of the insulator layer surrounding the recess, a gate electrode located on the bottom of the recess so that it faces the negative electrode, Hall electrodes that are provided on the surface of both sidewalls of the recess and which are parallel with the line connecting the centers of width of the negative and positive electrodes. All of these electrodes are disposed in a vacuum containment structure.Type: GrantFiled: April 6, 1995Date of Patent: January 7, 1997Assignee: Fuji Electric Co., Ltd.Inventor: Kazuo Matsuzaki
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Patent number: 5576986Abstract: A highly reliable memory device with excellent heat resistance that can be used in any environment utilizes a chemical change to define a state transition. The memory device includes a micro vacuum tube structure having a recess portion formed on an upper face of a quartz substrate, a cold cathode having many comb-tooth like tips extending from the quartz substrate over to one side of the recess portion, a rectangular control electrode disposed on the side of the cold cathode at the bottom of the recess portion, an anode extending from the quartz substrate over to the other side of the recess portion and facing opposed to the cold cathode, and a sealing member for vacuum sealing a space inside the recess portion 11a. N.sub.2 and O.sub.2 gases are enclosed in a space under the pressure of 0.2 mmHg. By changing the control electrode voltage, energy of accelerated electrons is changed: NO is produced at the control voltage of 17 eV, NO2 at 23 eV and the product gases dissociate to N.sub.2 and O.sub.Type: GrantFiled: October 14, 1994Date of Patent: November 19, 1996Assignee: Fuji Electric Co. Ltd.Inventors: Kazuo Matsuzaki, Yoshiyuki Sakai, Yuichi Urano, Hidekatsu Kuroda, Akira Amano
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Patent number: 5519582Abstract: A magnetic induction coil is mounted directly on and integrated with a semiconductor wafer containing integrated circuitry for a stable power source. Grooves are etched in the reverse face of the wafer substrate, an insulating film is applied, and conducting material fills the grooves, forming the coil. The coil conductors are connected with wiring conductors from the opposite side through protruding electrodes.Type: GrantFiled: August 7, 1995Date of Patent: May 21, 1996Assignee: Fuji Electric Co., Ltd.Inventor: Kazuo Matsuzaki
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Patent number: 5509309Abstract: An acceleration measuring device consists of a sealed-off, diode vacuum tube which in turn contains a cold cathode and an anode positioned at opposing longitudinal end regions of the vacuum tube via an inter-electrode space C. An inert argon gas is sealed in the vacuum tube at the pressure of 1 mm Hg. Because the acceleration measuring device utilizes field effect electron emission phenomenon, i.e., quantum mechanical tunneling by the Schottky effect, from the cold cathode, one obtains electron-emission characteristics which are essentially temperature independent. The vacuum tube also includes one or more areas connected to the inter-electrode space, local density of the gas in which connected areas changes in response to acceleration experienced by the acceleration measuring device, whereby the density of the gas in the inter-electrode space is altered.Type: GrantFiled: November 30, 1994Date of Patent: April 23, 1996Assignee: Fuji Electric Co., Ltd.Inventors: Shotaro Yokoyama, Akira Amano, Kazuo Matsuzaki
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Patent number: 5503034Abstract: A force sensor comprises a substrate having a movable unit which is displaceable in response to one of an applied force and acceleration; an electron emission unit having a cathode for emitting electrons in accordance with an applied potential; an electron absorption unit having an anode for capturing electrons emitted from the cathode, the electron emission unit and the electron absorption unit being formed on a surface of the substrate; and a control unit for, on the basis of the displacement of the movable unit, controlling the electron capturing efficiency of the anode with respect to electrons emitted from the cathode.Type: GrantFiled: November 18, 1993Date of Patent: April 2, 1996Assignee: Fuji Electric Co., Ltd.Inventors: Akira Amano, Kazuo Matsuzaki, Toshiaki Sakai
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Patent number: 5499535Abstract: A force sensor comprises a substrate having a movable unit which is displaceable in response to one of an applied force and acceleration; an electron emission unit having a cathode for emitting electrons in accordance with an applied potential; an electron absorption unit having an anode for capturing electrons emitted from the cathode, the electron emission unit and the electron absorption unit being formed on a surface of the substrate; and a control unit for, on the basis of the displacement of the movable unit, controlling the electron capturing efficiency of the anode with respect to electrons emitted from the cathode.Type: GrantFiled: May 11, 1995Date of Patent: March 19, 1996Assignee: Fuji Electric Co., Ltd.Inventors: Akira Amano, Kazuo Matsuzaki, Toshiaki Sakai
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Patent number: 5496760Abstract: A dielectrics dividing wafer, and a method of manufacturing the wafer, is disclosed in which embedded dielectric films are provided in the interior of the wafer in a predetermined pattern extending laterally parallel to a face surface of the wafer, and partition dielectric films, in the form of vertical walls extending from the face surface and the rear surface of the wafer, to the embedded dielectric films, are provided to define semiconductor areas extending continuously from the face surface of the wafer to the rear surface of the wafer. The semiconductor areas can be used for vertical circuit elements. The partition dielectric films in conjunction with the embedded dielectric films and the face surface of the wafer also define additional planar semiconductor areas that can be used for planar structure circuit elements.Type: GrantFiled: August 18, 1994Date of Patent: March 5, 1996Assignee: Fuji Electric Company, Ltd.Inventor: Kazuo Matsuzaki
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Patent number: 5492011Abstract: A force sensor comprises a substrate having a movable unit which is displaceable in response to one of an applied force and acceleration; an electron emission unit having a cathode for emitting electrons in accordance with an applied potential; an electron absorption unit having an anode for capturing electrons emitted from the cathode, the electron emission unit and the electron absorption unit being formed on a surface of the substrate; and a control unit for, on the basis of the displacement of the movable unit, controlling the electron capturing efficiency of the anode with respect to electrons emitted from the cathode.Type: GrantFiled: May 11, 1995Date of Patent: February 20, 1996Assignee: Fuji Electric Co., Ltd.Inventors: Akira Amano, Kazuo Matsuzaki, Toshiaki Sakai
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Patent number: 5463226Abstract: A miniaturized electromagnetic wave detecting apparatus is provided that detects wavelengths from the microwave to the infrared regions in any environment. Electrons are field-emitted from an electron emitting means comprising a cold cathode and a gate electrode 2. Spiral motion and elongation of traveling length of the emitted electrons are enhanced by orthogonal magnetic field applied by a magnetic field application means while the electrons are attracted to the anode. The electrons are accelerated by the cyclotron resonance enhanced when the angular cyclotron resonance frequency .omega..sub.c, determined by the magnetic flux density of the orthogonal magnetic field, and the angular frequency .omega..sub.f of the electromagnetic wave to be measured coincide with each other. The accelerated electrons collide with and dissociate the dilute gas molecules to produce multiplied ion-pairs, which are then captured by the cathode and anode.Type: GrantFiled: July 7, 1994Date of Patent: October 31, 1995Assignee: Fuji Electric Co., Ltd.Inventors: Kazuo Matsuzaki, Akira Amano
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Patent number: 5381033Abstract: A dielectrics dividing wafer is disclosed in which embedded dielectric films are provided in the interior of the wafer in a predetermined pattern extending laterally parallel to a face surface of the wafer, and partition dielectric films, in the form of vertical walls extending from the face surface and the rear surface of the wafer, to the embedded dielectric films, are provided to define semiconductor areas extending continuously from the face surface of the wafer to the rear surface of the wafer. The semiconductor areas can be used for vertical circuit elements. The partition dielectric films in conjunction with the embedded dielectric films and the face surface of the wafer also define additional planar semiconductor areas that can be used for planar structure circuit elements.Type: GrantFiled: January 27, 1994Date of Patent: January 10, 1995Assignee: Fuji Electric Company, Ltd.Inventor: Kazuo Matsuzaki
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Patent number: 4851889Abstract: A conductivity modulated type field effect transistor, having a drain region of a first conductivity type with an associated drain electrode, a conductivity modulating region of a second conductivity type opposed to that of the drain region, a channel region of the first conductivity type and a source region of the second conductivity type formed consecutively on top of one another. The channel forming region has a low resistance layer of the same conductivity type formed in the middle of the region such that small portions of the channel forming region of higher resistance are left intact at the sides of the region, and the source region penetrates into the channel forming region at the sides of the region adjacent to the low resistance layer.Type: GrantFiled: December 1, 1987Date of Patent: July 25, 1989Assignee: Fuji Electric Co., Ltd.Inventor: Kazuo Matsuzaki
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Patent number: 4737923Abstract: A type arrangement data editing apparatus in which type arrangement data from a type carrier is automatically edited in accordance with the carrier set carried by the type carrier. A first area of a ROM stores the basic type arrangement data for a plurality of basic character sets. A second area of the ROM stores replacement data which is replaced for specific symbols in the basic character sets, and the start addresses of the type arrangement data for each set. An identifier identifies which character set and which replacement data are carried on the type carrier. A microprocessor stores a program for retrieving the respective type arrangement data and inserting the replacement data therein. The data is sent to a RAM, where it is compared to input data to print a specific print symbol.Type: GrantFiled: March 2, 1983Date of Patent: April 12, 1988Assignee: Hitachi Koki Co., Ltd.Inventors: Kazuo Matsuzaki, Tsuneki Kobayashi, Masao Miyasaka, Kazuyuki Kubo, Kimio Nakamura
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Patent number: 4286517Abstract: A magnetic interference prevention system in a printer comprising a plurality of print hammers whose hammering surfaces are disposed in a straight line and a plurality of printing magnets arranged adjacent one another to drive each of the print hammers respectively. In this system when a signal to drive a first printing magnet for a column is provided the driving of at least one of two printing magnets adjacent to the first printing magnet is inhibited for a predetermined period of time. This will prevent three adjacent printing magnets from being driven substantially at the same time.Type: GrantFiled: July 12, 1979Date of Patent: September 1, 1981Assignee: Hitachi Koki Company LimitedInventors: Shigenobu Katagiri, Hiroshige Nakano, Kazuo Matsuzaki
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Patent number: 4236447Abstract: A device for limiting the number of printing columns in a printer in which a group of printing data codes transferred from a data source are successively compared with a group of type codes which are determined in correspondence to the instantaneous positions of type on a type carrier, so that a type in a place where a printing data code coincides with a type code is printed. The device comprises a reversible counter adapted to subject a coincidence signal relating to said printing data code and type code and a printing completion signal for each place to addition and subtraction, respectively, so that when the count value of the reversible counter reaches a predetermined value, printing for further places is inhibited.Type: GrantFiled: October 10, 1978Date of Patent: December 2, 1980Assignee: Hitachi Koki Co., Ltd.Inventors: Kazuo Matsuzaki, Shigenobu Katagiri, Hiroshige Nakano