Abstract: An omnidirectional wheel whose outer circumference surface is formed by pluralities of rollers, and includes a rotating part that rotates around a rotation axis. A plurality of supports are arranged in a circumferential direction of the rotating part and each mounted on the rotating part. The rollers include a plurality of first rollers and a plurality of second rollers. Each support has a first arm supporting one end side of a corresponding first roller of the plurality of first rollers, and a second arm supporting the other end side of the corresponding first roller. A corresponding second roller of the plurality of second rollers is supported by the first arm of one of two supports that are adjacent to each other in the circumferential direction and the second arm of the other one of the two supports.

Abstract: Provided are vitamin D3 derivatives of formula (I), pharmaceutical compositions thereof, and pharmaceutical or medical uses thereof for treating metabolic disease, a liver disease, obesity, diabetes, cardiovascular disease, or cancer in a patient in need thereof.

Abstract: A method for manufacturing a light-emitting element includes preparing a wafer that includes a semiconductor structure body and a light-transmitting conductive film; forming a first mask on the light-transmitting conductive film; removing the light-transmitting conductive film exposed from the first mask to form an opening in the light-transmitting conductive film, the opening exposing the semiconductor structure body from under the light-transmitting conductive film; forming an n-side exposed part by removing the semiconductor structure body exposed from the first mask; removing the first mask; forming a second mask on the light-transmitting conductive film; removing the light-transmitting conductive film exposed from the second mask; forming an n-side electrode at the n-side exposed part; forming a third mask on the light-transmitting conductive film and on the semiconductor structure body; and removing the semiconductor structure body to form a groove dividing the semiconductor structure body into a plural

Abstract: An image capturing apparatus comprises an imaging unit, a sensor unit, a first focus detection unit configured to detect a first in-focus position based on a pair of image signals, a second focus detection unit configured to detect a second in-focus position based on a signal output from the imaging unit, a control unit configured to control a position of the focus lens and control display indicating the focus detection areas, and a correction unit configured to acquire a correction amount for correcting the first in-focus position, wherein the correction unit determines a first focus detection area from which the correction amount is to be acquired while the focus lens is moved to the second in-focus position, and wherein the control unit controls the first focus detection area to be identifiable.

Abstract: An image capturing apparatus includes an image sensor having a first pixel group that photoelectrically converts an object image from a first exit pupil region, a second pixel group that photoelectrically converts an object image from a second exit pupil region, and a third pixel group for capturing that photoelectrically converts an object image from overall exit pupil region; a focus detection unit that detects focus information by performing a defocus calculation with use of a first image signal obtained from the first pixel group and a second image signal obtained from the second pixel group; an image processing unit that converts captured image data into an image file for recording and saving; and a data recording unit that records, in association with the image file, signals obtained from the first pixel group and the second pixel group such that the defocus calculation can be performed.

Abstract: An image capturing apparatus includes an image sensor having a first pixel group that photoelectrically converts an object image from a first exit pupil region, a second pixel group that photoelectrically converts an object image from a second exit pupil region, and a third pixel group for capturing that photoelectrically converts an object image from overall exit pupil region; a focus detection unit that detects focus information by performing a defocus calculation with use of a first image signal obtained from the first pixel group and a second image signal obtained from the second pixel group; an image processing unit that converts captured image data into an image file for recording and saving; and a data recording unit that records, in association with the image file, signals obtained from the first pixel group and the second pixel group such that the defocus calculation can be performed.

Abstract: An image capturing apparatus comprises an imaging unit, a sensor unit, a first focus detection unit configured to detect a first in-focus position based on a pair of image signals, a second focus detection unit configured to detect a second in-focus position based on a signal output from the imaging unit, a control unit configured to control a position of the focus lens and control display indicating the focus detection areas, and a correction unit configured to acquire a correction amount for correcting the first in-focus position, wherein the correction unit determines a first focus detection area from which the correction amount is to be acquired while the focus lens is moved to the second in-focus position, and wherein the control unit controls the first focus detection area to be identifiable.

Abstract: The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.

Abstract: The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01?Zn/(In+Zn)?0.22.

Abstract: The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01?Zn/(In+Zn)?0.22.

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property and credibility, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Si, In, Zn, and O as constituent atoms.

Abstract: The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms.

Abstract: Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

Abstract: The image pickup apparatus electrically converts an object image to produce an image signal and includes a first detector detecting a first in-focus position by a phase difference detection method, a second detector detecting a second in-focus position by a contrast detection method using the image signal, and a corrector correcting, based on a difference between the first and second in-focus positions, the first in-focus position for image pickup. A controller instructs the optical apparatus to move the focus lens by a predetermined movement amount when the second in-focus position is detected, receives, from the optical apparatus, information on an actual movement amount of the focus lens in response to the instruction, and instructs again the optical apparatus to move the focus lens with change of the predetermined movement amount when a difference between the predetermined and actual movement amounts exceeds a predetermined value.

Abstract: The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.

Abstract: A method for manufacturing a semiconductor device including a thin film device unit including a TFT, and a peripheral device unit provided around the thin film device unit and including a semiconductor element, includes a first step of preparing a substrate, a second step of bonding the peripheral device unit directly to the substrate, and a third step of forming the thin film device unit on the substrate to which the peripheral device unit is bonded.

Abstract: Disclosed is a glass substrate (20) that is capable of constituting a semiconductor device (10) when a monocrystalline silicon thin film (90) is provided on the surface of the substrate by transfer. The surface of the glass substrate (20) has a receiving surface (22) onto which the monocrystalline silicon thin film (90) can be provided. The height of the ripples on the receiving surface (22) having a period of 200 to 500 microns is no more than 0.40 nm.

Abstract: Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

Abstract: An image capturing apparatus includes an image sensor having a first pixel group that photoelectrically converts an object image from a first exit pupil region, a second pixel group that photoelectrically converts an object image from a second exit pupil region, and a third pixel group for capturing that photoelectrically converts an object image from overall exit pupil region; a focus detection unit that detects focus information by performing a defocus calculation with use of a first image signal obtained from the first pixel group and a second image signal obtained from the second pixel group; an image processing unit that converts captured image data into an image file for recording and saving; and a data recording unit that records, in association with the image file, signals obtained from the first pixel group and the second pixel group such that the defocus calculation can be performed.

Abstract: The present invention presupposes a MIPS electrode in which a gate electrode of a MISFET is made up of a stacked film of a metal film and a polysilicon film. Then, by a first characteristic point that a gate contact hole is formed to have an opening diameter larger than a gate length of the gate electrode of the MIPS electrode and a second characteristic point that a concave portion is formed in a side surface of the metal film constituting the gate electrode, the further reduction of the gate resistance (parasitic resistance) and the improvement of the connection reliability between the gate electrode and the gate plug can be achieved.