Abstract: A durable frost heave damage preventive structure of underground structures applicable easily and at low cost to many different kinds of underground structures. The frost heave damage preventive structure includes a plate-like reaction member (7) provided at the bottom of an underground structure (1) approximately in parallel to a freezing front in the ground.

Abstract: A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.

Abstract: A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.

Abstract: A thermoplastic olefin elastomer molded article has a sealant contact portion coming into contact with a urethane sealant and is substantially made of thermoplastic olefin elastomer. At least the sealant contact surface of the sealant contact portion is made of a polyvinyl chloride layer or a thermoplastic polyurethane layer. At least the portion of the molded article adjoining the polyvinyl chloride layer or the thermoplastic polyurethane layer is made of a chlorinated thermoplastic olefin elastomer which is obtained by replacing part or the whole of the non-rigid phase of a thermoplastic olefin elastomer with chlorinated polyethylene and is capable of thermal fusion bonding to the polyvinyl chloride layer or the thermoplastic polyurethane layer.

Abstract: A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth.

Abstract: An ultrasonic manipulation apparatus has a plurality of ultrasonic wave oscillators arranged in two dimensions to trap, fix or move particles to an optional position in the solution or perform cell fusion by using a gradient force obtained by superposing one over another the gradient force fields generated by ultrasonic waves produced by a plurality of ultrasonic wave oscillators. The ultrasonic wave oscillators, functioning independently of one another, can emit ultrasonic waves with optional intensities and phases, and by using an external force produced by superposed gradient force fields generated by ultrasonic waves, particles are handled easily.

Abstract: A metal vapor discharge lamp comprises a discharge tube having a ceramic container into which a pair of electrodes and a discharge metal compound are sealed. The container comprises a first cylindrical portion, tapered portions, second cylindrical portions and third cylindrical portions. The third cylindrical portions are shrinkage-fitted to the second cylindrical portions. The electrodes are attached to the third cylindrical portion with a sealing member. An inner wall of the third cylindrical portions and the electrodes define a gap. The inner surface of the tapered portions and a central axis of the electrodes define an angle of 40°-80°. Thus, a metal vapor discharge lamp is provided whose discharge tube does not include disks among its parts, and which can maintain, over a long period of operation, good operating characteristics that depend only little on the lamp orientation.

Abstract: Disclosed is a wafer inspecting apparatus suitable to determine whether a scattering substance is a surface foreign matter or an internal defect even if the particle size of the scattering substance is smaller than the wavelength of irradiation rays used for inspection. The wafer is obliquely irradiated with irradiation rays at the Brewster angle, and scattered rays which are scattered from a scattering substance on or in the wafer are detected at and angle 0° and an angle of the Brewster angle or more by detectors. Then, it is determined whether the scattering substance is a surface foreign matter or an internal defect on the basis of a ratio between the intensities of the scattered rays detected by the detectors.

Abstract: In order to easily evaluate defects of the silicon wafer affecting the characteristic of a device, the present invention provides a defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample, which comprises a display apparatus for displaying a distribution of the defects on a graph having coordinate axes of distance from a central position of the sample and the depth where the defect exists based on the depth information and the positional information obtained by a detecting means.

Abstract: A metal halide lamp comprises a discharge tube of transparent ceramic in which a discharge metal is sealed, the discharge tube having a main cylindrical portion, ring portions provided at both ends of the main cylindrical portion, and tubular cylindrical portions provided at the ring portions; and a pair of electrodes inside the discharge tube; wherein a wall thickness .alpha. (in mm) of the main cylindrical portion satisfies the relation0.0023.times.W+0.22.ltoreq..alpha..ltoreq.0.0023.times.W+0.62,and a wall thickness .beta. (in mm) of the ring portion satisfies the relation0.0094.times.W+0.5.ltoreq..beta..ltoreq.0.0094.times.W+1.5,wherein W is the lamp power expressed in Watt. Alternatively, the discharge tube is air-tightly enclosed in the outer tube; the outer tube is filled with a gas comprising nitrogen gas; and the wall thickness .alpha. (in mm) of the main cylindrical portion satisfies the relation0.0023.times.W+0.12.ltoreq..alpha..ltoreq.0.0023.times.W+0.62,and the wall thickness .beta.

Abstract: In order to measure an inner defect of a sample with a certain high accuracy even if the sample surface of the moved up and down by flatness irregularity of the sample and problem on accuracy of the sample movement stage, incident light beams having two wavelength and respective different penetration depths for the sample are slantingly irradiated on the surface of the moving sample 15 from irradiation optical systems 4, 8, and the inner defect of the sample is measured by detecting the scattering light occurred from the interior of the sample with a detection optical system 9 arranged over the sample surface. A distance measurement means 14 is located in an upstream of a movement direction of said sample than said irradiation optical system 4, 8 and said detection optical system 9, thereby a surface height of said sample is measured.

Abstract: A metal halide lamp of the present invention has a ceramic discharge tube and a proximity conductor disposed adjacent to the ceramic discharge tube.

Abstract: An inspection method and apparatus for discriminating the foreign particles on the surface of a sample from the foreign particles or defects within the sample, and a semiconductor-device producing method using the inspection method and apparatus. The inspection apparatus includes a light source, a first optical system that causes the light from the source to be directed to the sample, a second optical system for condensing the light coming back from the sample, a polarizing prism for separating the condensed light into polarized components, and optical detectors, for detecting the polarized components. The two optical systems, are arranged for their optical axes to make an angle of 50.degree. to 120.degree. relative to each other.

Abstract: A chamber for exerting an ultrasound beam on a sample solution containing particles to be concentrated, separated or arranged is provided with a view toward arbitrarily controlling the shape of a spatial distribution of potential energy created by the ultrasound beam and concentrating, separating or periodically arranging the particles. In contrast to the chamber, irradiation ultrasound sources for generating ultrasound beams are provided to create an ultrasonic intensity distribution for producing a position potential energy distribution used to exert a force forwarded in a predetermined direction or a force staying at a predetermined region to each particle. Thus, a specific spatial distribution of potential energy can be realized by ultrasound beams each having a specific intensity, a specific frequency and a specific phase or an ultrasound beam formed by superimposing these on one another.

Abstract: An overcurrent protection device for a motor M with an overheat prevention function having a housing 10 with fixed contacts 16, 18 and movable contacts 24, 26. A first snap acting bimetallic element 20 in the device is responsive to heat from overcurrent conditions and a second snap acting bimetallic element 40 is responsive to heat from the temperature for the motor M. The movable contacts 24, 26 are controlled by the first bimetallic element to cause engagement or nonengagement with the stationary contacts 16,18. Coupling members 42, 44 contained in the housing engage both bimetallic elements 20, 40 and allow the first overcurrent bimetallic element 20 to snap independently of the second bimetallic element 40 while providing for snap action of the second bimetallic element 40 to also cause the first bimetallic 20 to snap.

Abstract: A plurality of memory modules are stacked so as to form a multilayer integrated memory circuit. All of the memory modules have a plurality of bare memory IC chips mounted thereon, and have the same structure, the same circuit configuration and the same terminal arrangement in lead frames with each other. Each of the memory modules to be stacked in each layer is rotated by 90.degree., 180.degree. or 270.degree. before being stacked and connected to each other. Thus, in the multi-layered memory circuit, it is possible that signals can be selectively input/output to/from a particular layer in the multilayer structure, although the lead terminals of each of memory modules has the same configuration and the same arrangement with each other. As a result, a small-size integrated memory circuit device with a large memory-capacity can be provided, which can be fabricated easily and efficiently. A higher processing speed of digital computers can be also achieved.

Abstract: A turbo compressor in which a rotor having impellers is supported by a magnetic bearing is constructed such that a control valve is provided in a thrust balancing line connecting a suction line of the compressor to a balancing chamber formed outside a balancing drum provided at one end side of a rotor. The control valve serves to regulate a rate at which a gas flows through the thrust balancing line, and is adapted to be controlled in relation to a load imposed upon the magnetic thrust bearing.

Abstract: A process for producing a protein-oriented membrane which is enhanced physically and chemically by orienting protein and cross linking the oriented protein together, is described. The proteinaceous membrane which is subjected to orientation treatment alone is weak physically and chemically, and its processing and handling are therefore difficult. However, according to the present invention, the protein after the process of orientation is cross linked together to produce a protein-oriented membrane remarkably enhanced physically and chemically.

Abstract: An apparatus and a method for non-invasively measuring oxygen partial pressure in a living body in which light is thrown on a living body to be measured, the oxygen saturation of the living body is obtained from the light absorption spectrum or light scattering spectrum thereof, the temperature and/or pH of the living body is obtained from a nuclear magnetic resonance signal from the living body, and the oxygen partial pressure in the living body, useful for the diagnosis thereof, is determined on the basis of not only the oxygen saturation but also the temperature and/or pH of the living body.

Abstract: A method of making a semiconductor integrated circuit provided with an isolating region constituted of an upper and lower isolating regions, and integrated circuit element regions is disclosed, wherein: the lower isolating region is diffused upward to a depth of a little more than half the thickness of an epitaxial layer to link with the upper isolating region prior to a doping of the upper isolating region; the doping of the lower isolating region and integrated circuit element regions, is implemented by means of ion implantation through a resist film which is capable of blocking ions implanted and in which specified doping windows have been formed in advance, and a SiO.sub.2 film is used as a reference mask in an ion implanting step, and the respective borders of the upper isolating region and the specified regions of the circuit elements is determined by self-alignment.