Abstract: The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.

Abstract: Luminous surfaces 25 of a concave-convex shape are formed on a light guide member 2 of a scuff plate, and a screen member 4 made of a non-transparent material is disposed between the light guide member 2 and a wire harness 31 of the scuff plate. The light guide member 2 luminously displays a design in a three-dimensional manner, and also the wire harness 31 will not be visually recognized through the light guide member 2, and therefore the design is enhanced.

Abstract: The objective of the present invention is to provide a display device that presents great decorative effects. For a display device that provides a luminous display consisting of characters, numbers, symbols or figures, or arbitrary combinations of them, having a desired form, a half mirror layer is formed above a mirror surface, through a translucent layer, and a desired form is luminously displayed at a location between the mirror surface and the half mirror layer and at a distance from the mirror surface.

Abstract: A phase shift element formed on the outer surface of a glass substrate is formed of an organic PAS film, with a refractive index of approximately 1.5. There is atmospheric air (with a refractive index of 1.0) between the phase shift elements. A thickness of the phase shift element is set at 550 nm, a value obtained by substituting 550 nm for a center wavelength and 0.5 for ?n in D1 ?n=center wavelength/2. A phase shift element formed on the inner surface of the glass substrate is an SiN layer (with a refractive index of approximately 2.0). A substance between the phase shift elements is a flattened film which has a heatproof temperature of 600 degrees centigrade or above, a low refractive index, and flattened effect. A thickness of the flattened film may be equal to or larger than a thickness of the phase shift element and thus is set at 550 nm.

Abstract: The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.

Abstract: A metal halide lamp includes a ceramic arc tube that is composed of a main body and two narrow tube parts provided at respective ends of the main body; a pair of electrodes provided inside the main body; two feeders, each being connected at one end thereof to a different one of the electrodes inside the main body, and extending through a different one of the narrow tube parts, so as to be external to the arc tube at another end; a starting wire that is connected to one of the feeders, and that is in a vicinity of or contacts an outer surface of the arc tube; and a current suppressing unit that is on a current path of the starting wire, and suppresses or cuts off current on the path.

Abstract: An injection molding apparatus includes a forming mold provided with a gas inlet through which a gas is introduced into an area between a rear molding surface in a cavity and a resin material inside the cavity. A plurality of the gas inlets is provided along a passage direction of the resin material in the cavity. In injection molding the resin molded article, a molten resin material is introduced into the cavity from a resin inlet and, when filling the inside of the cavity with the resin material, the introduction of the gas is sequentially started, beginning with a gas inlet provided in an area inside the cavity which is first filled with the resin material, thereby sequentially pressing the relevant resin material against a front molding surface of the cavity.

Abstract: A turbo-compressor being driven by an electric motor has an inlet guide vane and a blow-off valve. The surge limit line of the compressor is amended depending upon seasonal changes of temperature and pressure of a working gas to be sucked into the compressor. Upon the basis of the surge limit line amended, the minimum opening of the inlet guide vale is altered, thereby reducing the driving power or force of the compressor.

Abstract: A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

Abstract: A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1?(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.

Abstract: There is provided a resin molded part mounting structure in which a resin molded part is fixed to a mating member via a clip, wherein a connecting portion is provided on the resin molded part, wherein the clip is made up of a seat portion adapted to be joined to the connecting portion and a clip body which has a leg portion which extends from the seat portion and an engaging portion which is formed at a distal end of the leg portion, and wherein a deformable portion which deforms to extend a distance between the resin molded part and the mating member is provided on at least one of the seat portion, the leg portion and the connecting portion.

Abstract: A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

Abstract: The bill discriminating device includes: a body; and a mask portion, the body includes a main substrate having a light source, the mask portion includes a bill insertion port formed to be placed in a front surface of the bill discriminating device, and a bill chute passage having one end connected to a bill conveying passage and the other end extending to the bill insertion port, at least one surface of the bill chute passage is formed of a light guide member including a portion extending from the light source to the bill insertion port, and light emitted from the light source is optically connected to the bill insertion port via the light guide member.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: A lapping apparatus lapping a work having a pre-machined surface comprises a lapping film which includes a thin substrate having a surface provided with abrasive grains, a shoe disposed at a back surface side of the lapping film, a shoe driving unit which drives the shoe toward the work in order to press the abrasive-grained surface of the lapping film to the pre-machined surface of the work, a rotational driving unit which drives the work rotationally, a detecting unit which detects the position of the rotating work in the rotating direction, and a controlling unit which controls the pressing force of the shoe driving unit so as to drive the shoe correspondingly to the position of the work in the rotating direction during machining.

Abstract: To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.

Abstract: The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X and long axis direction Y on a rail, a glass substrate is carried, which has an amorphous silicon semiconductor film formed. Polycrystallized and large grain silicon film may be obtained by intensity modulating the pulsed laser beam in a line beam shape by means of a phase shift mask with a periodicity in the long axis direction Y of the laser beam, moving the laser beam randomly in the modulation direction of the amorphous silicon semiconductor film formed on the glass substrate to expose to crystallize the film. The image display device may incorporate an active matrix substrate having active elements such as thin film transistors formed by this silicon film.

Abstract: Provided is a metal halide lamp capable of being dimmed, which is prevented from non-lighting due to leakage of an arc tube attributable to a crack occurring at thin tubes, as well as realizing a desired color characteristic. The metal halide lamp has an arc tube that includes an envelope made of translucent ceramic, a pair of electrodes, and metal halides, the metal halides including rare earth metal halide, sodium halide, and magnesium halide, the rare earth metal halide being at least one of dysprosium halide, thulium halide, holmium halide, cerium halide, and praseodymium halide, and the magnesium halide being at least one of magnesium iodide and magnesium bromide, where when a maximum lamp power P (W) is in a range of 70 W to 250 W, the following relations are satisfied: 0.0345A+0.0028B<0.0015P+0.0475; A?0.021P+0.313; and B?10.0, where A (mg) represents a total content of the metal halides, and B (mol %) represents a content ratio of the magnesium halide to the metal halides.

Abstract: A turbo-compressor being driven by an electric motor has an inlet guide vane and a blow-off valve. The surge limit line of the compressor is amended depending upon seasonal changes of temperature and pressure of a working gas to be sucked into the compressor. Upon the basis of the surge limit line amended, the minimum opening of the inlet guide vale is altered, thereby reducing the driving power or force of the compressor.

Abstract: A foamed molded product having joining flat surfaces to be joined to a joining object, in which the foaming ratio of an ordinary portion is higher than the foaming ratio of joining flat surface forming portions provided with the joining flat surfaces. Preferably, the foamed molded product has the joining flat surface forming portions on an end or both ends of the ordinary portion. Preferably, the foamed molded product has an arch portion whose sectional shape is substantially arcuate and the joining flat surfaces are provided on both ends of a concave side face of the arch portion. Preferably, when the foaming ratio of the joining flat surface forming portion is assumed to be A and the foaming ratio of the ordinary portion is assumed to be B, B/A=1.01-2.5.