Abstract: When a first semiconductor chip is installed on a circuit substrate by using an anisotropic conductive bonding agent, one portion thereof is allowed to protrude outside the first semiconductor chip. A second semiconductor chip is installed on the first semiconductor chip and a support portion formed by the protruding resin. The protruding portion of the second semiconductor chip is supported by the support portion from under. Thus, in a semiconductor device having a plurality of laminated semiconductor chips in an attempt to achieve a high density, even when, from a semiconductor chip stacked on a circuit substrate, one portion of a semiconductor chip stacked thereon protrudes, it is possible to carry out a better wire bonding process on electrodes formed on the protruding portion.

Abstract: A semiconductor device package which eliminates the possibility of damages to a solder connected portion of a flip-chip connected chip by load, or which eliminates ultrasonic output at the time of wire bonding is described. Electrodes of a first chip are connected to first connection pads corresponding to the electrodes with the first chip being bonded at its rear surface to a rear surface of a second chip. A first resin is interposed in a gap between the first chip and a circuit board so as not to cover the first or second connection pads. Thereafter, the electrode of the second chip is connected to the second connection pads by wires, and the whole device is overlayed by a second resin.

Abstract: A process for preparing a biaxially stretched film of a polyamide blend, which comprises (1) melt extruding a polyamide blend to make an unstretched film and (2) stretching the unstretched film first in the machine direction and then in the transverse direction, or (2') stretching the unstretched film first to make a uniaxially stretched film having a plane orientation index of about 0.6 to 1.7 and then stretching the uniaxially stretched film in a direction substantially at a right angle to the direction at the previous stretching, said polyamide blend comprising 97 to 80% by weight of an .alpha.-type aliphatic polyamide (Component A) and 3 to 20% by weight of at least one polyamide (Component B) selected from the group consisting of (i) an .alpha.-type aliphatic polyamide different from the Component A, (ii) a .gamma.

Abstract: A process for preparing a biaxially stretched film of polyamide blend, which comprises (1) extruding a polyamide blend in melt to make an unstretched film and (2) stretching the unstretched film first in a machine direction with a stretch speed of about 40,000 to 60,000,000 %/minute in a draw ratio of about 2 to 6 and then in a transverse direction with a stretch speed of about 500 to 100,000 %/minute in a draw ratio of about 2 to 6, or (2') stretching the unstretched film first to make a uniaxially stretched film having a plane orientation index of about 0.6 to 1.