Abstract: A radio data transmitter includes radio switching circuit which is activated in response to first radio signal having a predetermined particular pattern, and a data transmitter unit. The data unit transmits a first radio signal include a carrier modulated by predetermined data from an antenna when supplied with power in accordance with the activation of the radio switching circuit, and subsequently disconnect the power supply. In addition, a radio data receiver includes switch-activation to circuit for transmitting the first radio signal having the predetermined particular pattern, a receiving circuit for receiving the second radio signal including the data from the data transmitter unit activated by the first radio signal having the predetermined particular pattern, and a storage device for storing data received by the receiving circuit.

Abstract: A radio switching apparatus is provided which is actuated upon reception of a radio signal and which is capable zero or near-zero standby electric power consumption. The radio switching apparatus includes a receiving antenna; a surface-acoustic-wave device to which a signal received by the antenna is fed and which extracts a specific pattern contained in the signal; a storing circuit for storing output electric power of the surface-acoustic-wave device; and a switch circuit which is turned on when the output voltage of the storing circuit exceeds a set value.

Abstract: There is provided a semiconductor device high in speed and in reliability by formation of interlayer dielectric films capable of rapidly transmitting heat as generated at wiring lines and yet less in capacitance.The semiconductor device of the present invention has multi-layered low-resistance wiring lines such as metal layers as stacked or laminated on a top surface and/or a bottom surface of a conductive substrate with a first dielectric material being sandwiched between adjacent ones thereof, featured in that said first dielectric material between said low-resistance wiring layers has a through-hole formed therein, and that said through-hole comprises a hole (through-hole: TH) filled with at least a conductive material, and a hole (dummy hole; DH) filed with a second dielectric material having thermal conductivity greater than that of said first dielectric material.

Abstract: A process and apparatus for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al. Pressure in a deposition chamber is maintained from 10.sup.-3 to 760 Torr. Alkyl aluminum hydride and hydrogen gas are introduced at a partial pressure from 1.5.times.10.sup.-5 to 1.3.times.10.sup.-3 of the pressure in the chamber. Aluminum is deposited on a substrate in the chamber by heating the substrate sufficiently to decompose the alkyl aluminum hydride.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: A gas-feeding device for feeding a starting gas for deposition-film-formation by the chemical vapor deposition method, comprising a container having a space for discharging the starting gas containing an organometallic compound by introduction of a carrier gas; a gas-introducing means connected to the container for introducing a carrier gas is described. A plurality of openings for introducing the organometallic compound into the container is also provided, wherein each opening is part of an atomizer employing a piezoelectric element to eject the organometallic compound in a mist state into the container where the carrier gas passes through the space, and a container is provided for storing the organometallic compound.

Abstract: A chemical vapor deposition process is disclosed comprising the steps of forming liquid droplets of a liquid raw material; injecting the liquid droplets through a plate member opening placed opposite to the surface of the substrate to vaporize the liquid droplets; and supplying a reaction gas that reacts with the vaporized raw material; and depositing a thin film on the substrate.

Abstract: A gas-feeding device for feeding a starting gas for forming a deposited film by the chemical vapor deposition method, comprising a storage area for an organometallic compound having a high viscosity, wherein the storage area has a space for discharging a starting gas containing the organometallic compound by introducing a carrier gas into the storage area. The carrier gas is introduced into the organometallic gas via a gas-introducing member having a number of openings. An ultrasonic oscillator is provided in the storage area to generate cavitation in the organometallic compound. A deposited-film forming apparatus incorporating the gas-feeding device is also described.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: A process for thin film formation comprises selectively irradiating with an energy ray a substrate to the surface of which a surface treatment for providing hydrogen atoms is applied to thereby form an irradiated region and a non-irradiated region on the surface of the substrate, and forming a thin film selectively on the non-irradiated region.

Abstract: A semiconductor circuit device wiring is provided in which the wiring connected to a semiconductor element is composed of a crystalline material. The crystal axis direction along which nearest neighboring atoms in a single crystal constituting the crystalline material are arranged and the electric current direction through the wiring are crossed with each other at an angle of 22.5.degree. or less.

Abstract: A gas feeding device for feeding to a reaction vessel a starting gas for film formation by chemical vapor deposition. The gas feeding device is connected to a container which contains an organometallic compound, and has a plurality of gas introducing openings for introducing a carrier gas into the container for carrying vaporized organometallic compound into the reaction vessel. The gas feeding device includes an accelerating device which selects a carrier gas introducing route into the container through at least one of the plurality of gas introducing openings for accelerating the generation of the starting gas.

Abstract: An apparatus for vaporizing a liquid raw material comprises a nozzle with an open tip end for ejecting a liquid raw material into a heated gas atmosphere as liquid droplets and a heated plate with a small opening disposed in front of the nozzle, a space opposite to that occupied by the nozzle with respect to the plate being evacuated.

Abstract: By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

Abstract: A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450.degree. C.

Abstract: A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al.

Abstract: In forming a deposited film composed mainly of Al according to the CVD method utilizing gas of alkyl aluminum hydride, hydrogen gas, and if desired, further gas containing Si atoms, film formation is carried out by shifting the deposition rate from a low deposition rate to a high deposition rate.According to this method, excellent selectivity is exhibited and also a film excellent in flatness can be deposited at a high deposition rate.

Abstract: A spread spectrum receiving device using a correlator in an IF stage of the receiving device is disclosed, which is so constructed that interference wave or disturbing wave is removed by subjecting the interference wave or the disturbing wave and a desired spread spectrum signal to a signal processing in a stage preceding or succeeding a correlator to take out the desired spread spectrum signal.

Abstract: A semiconductor element is disclosed, with which it is possible to obtain an area sufficiently large for evacuating heat and to have a high thermal conductivity so as to have an extremely high heat evacuation efficiency by using cooling fins having a microchannel structure.

Abstract: A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.