Abstract: A metal film forming method comprises steps of:forming a non-monocrystalline metal film principally composed of aluminum, in contact, at least in a part thereof, with a monocrystalline metal principally composed of aluminum; andheating the non-monocrystalline metal film to convert at least a part thereof into monocrystalline state.

Abstract: A process for forming a Si-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing silicon and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Si-containing Al.

Abstract: By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

Abstract: A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of A1.

Abstract: In a spread spectrum communication device using a convolver as a correlator, the modulation-demodulation system is so constructed that characteristics peculiar to the convolver are utilized for the frequency hopping of the base band primary modulated information and the spectrum spreading process using a pseudo noise code.

Abstract: An improved RHEED apparatus and a method for observing step-like surface irregularities of a sample by the use of the improved RHEED apparatus.

Abstract: A deposited film formation method which forms an aluminum film by use of the plasma CVD method,wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A).

Abstract: A thin film forming apparatus includes, in addition to a material gas nozzle, a control gas nozzle for jetting a control gas flow which encircles a material gas flow jetted from the material gas nozzle against a substrate supported in a reaction chamber, so as to shape the material gas flow into the form of a beam.

Abstract: In a spread-spectrum communication apparatus using a convolver as a correlator, demodulating processes in a receiver apparatus using a carrier and a PN code are performed under a non-synchronous condition.

Abstract: A surface acoustic wave charge transfer device of monolithic type has a channel stopper for preventing the charge carriers from deviating from the transfer channel of the device. The charge transfer device has an acoustic wave generator for generating an acoustic wave propagating in a piezo-electric layer, a transfer channel for transferring charge carriers within a depletion layer in the vicinity of the surface of a semiconductor being bunched in a potential wells of a potential wave accompanying the acoustic wave, and a detector for detecting the transferred charge carriers. In a preferred embodiment of the invention, the charge carriers are transferred in a perfect bunching condition. In another preferred embodiment, the acoustic wave propagates at such a speed that the time for propagating one wavelength distance is shorter than the statistical time for the charge carriers to drop in the traps on the surface of the semiconductor.

Abstract: An acoustic surface wave device includes a substrate made of an elastic material, a multilayer structure disposed on a surface of the substrate and having a silicon dioxide layer and an aluminum nitride layer superimposed on each other, and electrodes having predetermined configurations formed on the multilayer structure. The main component of the elastic material is a silicon monocrystal, whose temperature coefficient of delay time for acoustic surface waves is positive, and the piezo-electric axis of the aluminum nitride is either perpendicular or parallel to the surface of the substrate, with a negative delay coefficient, counteracting that of the substrate.

Abstract: A surface acoustic wave device comprises an elastic substrate having a major surface with a given crystal orientation and having a positive temperature coefficient of delay (TCD), and AlN film deposited on the elastic substrate so that piezoelectric axis of the AlN film has a predetermined direction with respect to the major surface of the elastic substrate having a negative TCD, and electrodes provided on the AlN film or between the elastic substrate and the AlN film.

Abstract: A crystal defect analyzer comprises acousto-electric transducer means disposed in close adherence to a sample to be analyzed through the medium of a filter layer which functions to intercept light or electrons or particles emitted from said excitation means and to transmit only acoustic waves produced within said sample by excitation, thereby it can attain higher response and sensitivity, smaller size, higher resistance to vibration and superior operationality.