Abstract: By applying a laser beam that is absorbed into a quartz crystal to an upper right end of a crystal chip, the height of the crystal chip is altered step by step to form a first step, a second step, a third step, and a fourth step, respectively. As such, control of the shape of a quartz crystal resonator is easy even if the quartz crystal resonator is miniaturized, the shape and the performance of a processed quartz crystal resonator are satisfactory, quartz crystal resonators of various shapes can be formed, a quartz crystal resonator can be formed at low cost with a small number of man-hours, a load in driving a quartz crystal resonator is small, and versatile equipment and tools can be used.

Abstract: An optical module comprising: an optical fiber; an optical element having an optical section and with a fixed position relative to the optical fiber; and a semiconductor chip electrically connected to the optical element, and the optical element and semiconductor chip being packaged. A hole is formed in the semiconductor chip, and the optical element is mounted on the semiconductor chip with the optical section facing the hole, and the optical fiber is inserted in the hole and fitted to the semiconductor chip.

Abstract: According to the present invention, a case housing a product and a lid made of material that transmits a laser beam are fixed to each other with a bonding member interposed between them, and thereafter, a laser beam is focused onto the bonding member through the lid so that the bonding member is melted. By doing so, the case and the lid are welded together via the bonding member.

Abstract: A method for manufacturing a piezoelectric resonator is provided including: forming a resonator element having a plate-like base and a plurality of arms extending laterally from the base on a substrate made of crystal; emitting laser light for irradiating one surface and the other surface of the arms with laser light and for removing a region irradiated with the laser light, so as to form a groove having a predetermined cross sectional shape perpendicular to the longitudinal direction of the groove; forming a driving electrode on the resonator element.

Abstract: A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.

Abstract: A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Abstract: An apparatus for cutting an electrical wiring line includes a laser generator for generating a laser beam, an optical beam branching element for branching a laser beam generated by the laser generator into a plurality of branch beams, and a condenser element for condensing the branch beams branched by the optical beam branching element (the optical beam branching element can also serve as the condenser element). The condenser element may be a condenser lens which is separate from the optical beam branching element. The power and the focal depth of the branch beam may be adjusted. When the substrate has a transparency to the laser beam, the branch beam is directed to the electrical wiring line formed on the substrate from the opposite side to the surface having the electrical wiring line.

Abstract: According to the present invention, a case housing a product and a lid made of material that transmits a laser beam are fixed to each other with a bonding member interposed between them, and thereafter, a laser beam is focused onto the bonding member through the lid so that the bonding member is melted. By doing so, the case and the lid are welded together via the bonding member.

Abstract: An apparatus for cutting an electrical wiring line includes a laser generator for generating a laser beam, an optical beam branching element for branching a laser beam generated by the laser generator into a plurality of branch beams, and a condenser element for condensing the branch beams branched by the optical beam branching element (the optical beam branching element can also serve as the condenser element). The condenser element may be a condenser lens which is separate from the optical beam branching element. The power and the focal depth of the branch beam may be adjusted. When the substrate has a transparency to the laser beam, the branch beam is directed to the electrical wiring line formed on the substrate from the opposite side to the surface having the electrical wiring line.

Abstract: A method of laser processing for processing a laminated member where a metal thin film is protruded from an end portion of a silicon substrate at the bottom of the silicon substrate, wherein; a laser beam of which wavelength has the light absorption coefficient of the metal thin film being higher than the light absorption coefficient of the silicon substrate, is irradiated onto an boundary between an end of the silicon substrate and the metal thin film so as to cut the metal thin film.

Abstract: A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.

Abstract: A plurality of penetrating holes are formed in a substrate, each of the penetrating holes connecting a first opening and a second opening larger than the first opening. An etching resistant film is formed on a first surface of the substrate avoiding areas in which the first openings will be formed, part of the second surface in which the penetrating holes are formed being exposed so as to expose areas each of which includes two or more of the second openings. Small holes are formed in the formation regions for each of the penetrating holes. Etching having crystal orientation dependence is performed from both the first and second surfaces of the substrate.

Abstract: An optical module comprising: an optical fiber; an optical element having an optical section and with a fixed position relative to the optical fiber; and a semiconductor chip electrically connected to the optical element, and the optical element and semiconductor chip being packaged. A hole is formed in the semiconductor chip, and the optical element is mounted on the semiconductor chip with the optical section facing the hole, and the optical fiber is inserted in the hole and fitted to the semiconductor chip.

Abstract: An electro-optical device comprises first and second substrates (10, 20) disposed facing each other, an interconnect (14) formed on the surface of the first substrate (10) opposing the second substrate (20), and a conductive member (40) passing through the second substrate (20) and reaching both surfaces of the second substrate (20), and the conductive member (40) and interconnect (14) are electrically connected between the first and second substrates (10, 20).

Abstract: A semiconductor chip having a vertical current conduction structure of a high reliability: a semiconductor device, a circuit substrate, and an electronic apparatus each containing such semiconductor chips; and a method for producing them. A prehole (3) is formed in a silicon substrate (10) surface-oriented to a (100) face by laser beam irradiation. The prehole (3) is enlarged by anisotropic etching to thereby form a through-hole (4). An electrically insulating film is formed on an inner wall of the through-hole (4). An electrically conducting material is provided inside the insulating film to thereby form a metal bump (30).

Abstract: A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.

Abstract: An optical module comprising: an optical fiber; an optical element having an optical section and with a fixed position relative to the optical fiber; and a semiconductor chip electrically connected to the optical element, and the optical element and semiconductor chip being packaged. A hole is formed in the semiconductor chip, and the optical element is mounted on the semiconductor chip with the optical section facing the hole, and the optical fiber is inserted in the hole and fitted to the semiconductor chip.

Abstract: A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.

Abstract: A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.

Abstract: A method for processing a work in which a processed hole with a high aspect ratio is formed by laser machining. Silicon oxide films (2) are formed as protective films on front and rear surfaces, respectively, of a silicon substrate (1). The silicon substrate (1) is irradiated with a laser light through the protective films (2) to thereby perform a perforating process. Alternatively, the silicon substrate (1) is irradiated with a circularly or randomly polarized laser light. Hence, a processed hole with a high aspect ratio can be obtained. Moreover, the processed hole can be shaped straightly, so that processing accuracy is improved.