Patents by Inventor Kazutaka Ishigo

Kazutaka Ishigo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070090549
    Abstract: According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a p-type impurity diffusion layer formed on the semiconductor substrate, and Ni silicide formed on the diffusion layer, wherein an alignment mark for lithography is formed on the Ni silicide.
    Type: Application
    Filed: October 18, 2006
    Publication date: April 26, 2007
    Inventors: Tomoyasu Kudo, Kazutaka Ishigo