Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: In order to reduce the discharge delay time and increase the image quality in a display device such as a PDP using ultraviolet light emission produced by discharge, there is provided a display device including: a front panel and a rear panel disposed opposite to each other with discharge spaces formed therebetween, and a discharge gas being injected into the discharge spaces; at least a pair of electrodes for performing a display discharge; and phosphor layers emitting visible light by using ultraviolet light emission produced by discharge of the discharge gas. At least one of the compounds represented by the composition formulas Cs(1?x)M1xAl02 (where M1 is the I group element, 0?5x<1) and Cs(1?x)M2xAl(1+x)O(2+2x) (where M2 is the II group element, 0?x<1) is present in any of the components constituting the discharge spaces of the display device.

Abstract: Provided is a display device such as a plasma display device including a front plate and a rear plate arranged opposing to each other to form a discharge space, where a discharge gas filled inside the discharge space, and at least a pair of electrodes for performing a display discharge and a phosphor layer for emitting visible light by an ultraviolet ray emission by the discharge of the discharge gas are provided. Inside the discharge space, a material whose main composition is alumina oxychloride of a group IIa metal and/or a group IIb metal is at least partly contained. Accordingly, a sustain discharge voltage can be reduced.

Abstract: In a method of mounting a planar electronic circuit chip onto a flexible sheet together with another planar electronic element, the electronic circuit part and the another electric element are selected so that the planar surface of the another electric element is greater than the planar surface of the electronic circuit chip, and the another electric element and the electronic circuit chip are mounted on the sheet so that the planar surface of the another electric element and the planar surface of the electronic circuit chip are in parallel with the sheet surface, and the planer surface of the electronic circuit chip is accommodated within the planar surface of the another electric element as viewed in a direction perpendicular to the sheet surface.

Abstract: A high-quality long-life plasma display panel is provided by enabling compatibility between priming-electron emission characteristics, and other characteristics such as sputtering resistance, secondary electron emission characteristics, and wall charge retention. The plasma display panel is structured to include a front substrate, transparent electrodes and bus electrodes provided on the inner side of the front substrate, a dielectric layer covering these electrodes, a first protective layer covering the dielectric layer, and a second protective layer disposed on the side closer to the discharge space than the first protective layer. The first protective layer is doped with Sc to generate a predetermined excitation light by incidence of ultraviolet light. The second protective layer is doped with Si to emit electrons to the discharge space by the excitation light. With this structure, it is possible to realize a plasma display device in which the discharge delay is small, thereby the fluctuation less occurs.

Abstract: The present invention provides an image display device, by which it is possible to prevent dielectric breakdown between a bottom electrode and a top electrode (top electrode bus line), which make up thin-film type electron sources, and which is free of display defect and has longer service life. On a cathode substrate 10, a bottom electrode 11, a tunneling insulator 12, and a top electrode 13 are prepared. On a lower layer of the top electrode 13, a top electrode bus line 16 is formed, and the top electrode 13 is reliably connected to the top electrode bus line 16 via a contact electrode 15. A field insulator 12A, a lower layer 14a of the interlayer insulator deposited by sputtering and an upper layer 14b of the interlayer insulator are laminated between the top electrode 13 and the contact electrode and the bottom electrode 11, and the bottom electrode 11 is insulated from the top electrode 13 (top electrode bus line 16).

Abstract: A non-contact identification semiconductor device is provided with a semiconductor chip including a receiving circuit that receives an inquiry to the non-contact identification semiconductor device, a memory that stores identification information of multiple bits and a sending circuit that sends the identification information. An antenna coupled to said semiconductor chip receives the identification information from said semiconductor chip and transmits the identification information outside of said non-contact semiconductor. The long side length of the semiconductor chip is not greater than 0.5 mm in plane dimension, and the identification information is stored by a pattern printed by an electron beam.

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: A method of checking a sheet as to forgery thereof, the sheet being provided with an electronic circuit chip from or in which information can be read out or written and having visible information. The method includes a step of encrypting the visible information of the sheet and storing the encrypted visible information in the electronic circuit chip, and a step of determining discriminatively the authenticity of the sheet by comparing the visible information of the sheet with the information stored in the electronic circuit chip.

Abstract: A non-contact identification semiconductor device is provided with a semiconductor chip including a receiving circuit that receives an inquiry to the non-contact identification semiconductor device, a memory that stores identification information of multiple bits and a sending circuit that sends the identification information. An antenna coupled to said semiconductor chip receives the identification information from said semiconductor chip and transmits the identification information outside of said non-contact semiconductor. The long side length of the semiconductor chip is not greater than 0.5 mm in plane dimension, and the identification information is stored by a pattern printed by an electron beam.

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: A simple method was needed for dividing up the electron emitter electrodes into individual supply electrodes. An insulator partition wall was formed on the same layer and parallel to the supply electrode for supplying power to the electron emitter electrode, an electron emitter electrodes formed across the entire surface of the image display area, a side surface of the partition wall was sliced, condensation and solubility diffusion performed by heat treatment, ablation performed by irradiating the upper surface of the silicon partition wall with a laser, Joule thermal sealing/cutting performed by conducting electricity across the scanning lines enclosing the silicon partition wall in order to slice the electron emitter electrode.

Abstract: A shape of endoscope detecting apparatus in accordance with the present invention consists mainly of a shape detection unit, a marker, a location information of marker acquisition unit, and a display control unit. The shape detection unit detects the shape of a portion of an insertion unit of an endoscope inserted into a subject, and produces graphic data expressing the shape thereof. The marker is placed near a position on the subject at which the endoscope is inserted. The location information of marker acquisition unit acquires the location information of the marker. The display control unit graphically indicates on a display device the shape of the portion inserted into a body cavity, which is detected by the shape detection unit, using as a reference the location information of the marker acquired by the location information of marker acquisition unit.

Abstract: The present invention provides an image display device, in which a top electrode is selectively separated by laser ablation for each scan line. As the laser, a third harmonic wave of YAG laser with a wavelength of 355 nm is used. By setting film thickness of the interlayer insulator 15 to 100 nm and film thickness of a field insulator 14 to 140 nm, reflective spectrum has the minimum value near a wavelength of 355 nm, This laser beam is projected from a top electrode 13 toward a substrate 10. A part of the projected laser beam 20 is reflected by the top electrode 13, but most of the laser beam pass through a field insulator 14 and the interlayer insulator 15 and is reflected by a bottom electrode 11. As the result of interference of these two reflection waves, the minimum value appears in reflection spectrum. In this case, the laser beam is mostly absorbed near boundary surface between the top electrode 13 and the interlayer insulator 15.

Abstract: An object of the invention is to provide a thin-film cathode having a base electrode, an upper electrode and an electron accelerator disposed therebetween and made of an insulator or a semiconductor, wherein a diode current rises with a lower threshold voltage that that in the background art, so that a diode current required for electron emission can be secured with a low voltage, and to obtain an image display device long in life and low in power consumption. Platinum-group metal (Group VIII), noble metal belonging to Group Ib, or a laminated film, a mixed film or an alloy film of those materials containing an alkali metal oxide, an alkaline earth metal compound or a compound of transition metal belonging to Group III to VII from the interface with an electron accelerator to the surface is used as an upper electrode.

Abstract: The present invention provides an image display device, by which it is possible to prevent dielectric breakdown between a bottom electrode and a top electrode (top electrode bus line), which make up thin-film type electron sources, and which is free of display defect and has longer service life. On a cathode substrate 10, a bottom electrode 11, a tunneling insulator 12, and a top electrode 13 are prepared. On a lower layer of the top electrode 13, a top electrode bus line 16 is formed, and the top electrode 13 is reliably connected to the top electrode bus line 16 via a contact electrode 15. A field insulator 12A, a lower layer 14a of the interlayer insulator deposited by sputtering and an upper layer 14b of the interlayer insulator are laminated between the top electrode 13 and the contact electrode and the bottom electrode 11, and the bottom electrode 11 is insulated from the top electrode 13 (top electrode bus line 16).

Abstract: A self light emitting display device having high level of the external coupling efficiency and high grade image presentation as no optical cross-talk or blur can be obtained by a new light-emitting element. The device is constructed as follows. A plurality of picture elements, each of which picture elements has an organic layer composing light emitting areas, a transparent electrode and a reflective electrodes, are formed on a substrate. Between the picture elements, a bank which has a tilted reflective surface is formed so that the light emitting area is surrounded by the bank wherein the transparent optical waveguide layer is formed as optically isolated for each of the picture elements.

Abstract: This Application is intended to provide a method for effectively protecting paper or film-form media against forgery. This can be achieved by, for example, embedding in a paper or film-form medium a thin semiconductor chip up to 0.5 mm square, equipped with an antenna, and characterized in that the side walls of the semiconductor chip are formed using oxide films, and in that multiple such semiconductor chips are separated by etching. Limiting the size of these semiconductor chips to 0.5 mm or less enables improvement against bending and concentrated loads, and separating the semiconductor chips by etching results in semiconductor chips free from cracking and breakage. Also, the oxide films constituting the side walls of the semiconductor chips prevents short-circuiting at edges during connection to the respective antennas. Thus, simplified processes can be adopted.