Abstract: An endoscope shape detection system has a CPU included in a control unit. The CPU performs frequency sampling on digital data to calculate coordinates indicating the spatial positions of source coils incorporated in an insertion unit of an endoscope and of marker coils. An inserted state of the insertion unit of the endoscope is estimated based on the calculated coordinate data indicating the positions of the source coils. Display data based on which shape of the endoscope depicted is produced from the calculated coordinate data indicating the positions of the source coils, and output to a video RAM. Display data based on which marker coils are depicted is produced from the calculated coordinate data indicating the positions of the marker coils, and output to the video RAM. Consequently, the positions of the markers are depicted together with the shape of the endoscope. The positional relationship between the insertion unit of the endoscope and a patient's body can therefore be ascertained.

Abstract: A source coil line-break/short-circuit detecting circuit and a probe connection detecting circuit are provided to the source coil driving circuit unit of an endoscope shape detecting apparatus. The source coil line-break/short-circuit detecting circuit detects line-breaks and short-circuits of the source coils. The probe connection detecting circuit detects whether a connection exists with a probe. A marker coil line-break/short-circuit detecting circuit detects line-breaks and short-circuits of the marker coils. A marker connection detecting circuit detects whether a connection exists with a marker. Accordingly, using the apparatus without being connected to a probe or markers can be avoided by detecting the connection of the probe and markers by the probe connection detecting circuit and marker connection detecting circuit, respectively, when the system is energized, thereby avoiding detecting noise and consequently displaying a random image on the monitor.

Abstract: 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen are carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. A scanning transmission electron microscope has an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons.

Abstract: A 2-dimensional radiation image detector wherein a plurality of conversion elements for converting a radiation into visible light and a plurality of photo-sensitive elements for detecting the visible light and accumulating signals are formed an elements board includes two elements boards arranged in an overlapping relationship with each other and each having the plurality of photo-sensitive elements arranged two-dimensionally thereon such that the distance between centers of the photo-sensitive elements in one direction of the arrangement is substantially equal to a width of the photo-sensitive elements while the distance between the centers of the photo-sensitive elements in a direction perpendicular to the one direction is substantially equal to twice the width of the photo-sensitive elements and such that that portion of a radiation directed upon the two overlapping elements boards which has passed through a first one of the elements boards other than locations of the photo-sensitive elements is detected b

Abstract: A scanning transmission electron microscope including an electron detection system having a scattering angle limiting aperture (for the inner angle) and a scattering angle limiting aperture (for the outer angle) between a specimen and an electron detector (comprising a scintillator and a light guide) and only one electron detector is installed.

Abstract: A transmission electron microscope has a camera system that is linked to the optical lens system of the electron microscope by linking the number of electron beam scanning lines of the camera system with the zoom function of the optical lens system. Thus, the number of scanning lines increases as the magnification of the transferred image decreases. Further, the specimen under observation is photographed with a constant number of pixels at all times regardless of the magnification of the transferred image by the optical lens system, thus preventing a reduction in the amount of specimen information.

Abstract: 3-dimensional observation on the atomic arrangement and atomic species in a thin-film specimen as well as conventional electron microscope observations is carried out at high speed and accuracy by an electron microscope which measures electrons emitted at high angle from the specimen. For that purpose, the present invention provides a scanning transmission electron microscope having an electron detection device comprising a scintillator converting electrons detected thereby to photons, a photoconductive-film converting photons from the scintillator detected thereby to c.a. 1000 times as many electron-hole pairs as these photons (i.d. avalanche multiplication), an electron gun emitting an electron beam toward the photoconductive-film to detect the holes generated therein, and electron deflector electrodes deflecting the electron beam on the photoconductive-film.

Abstract: A photoconductive target having a transparent electrode layer and a photoconductive layer on a transparent substrate is disposed opposite to a group of integrated electron beam emitters having gate electrodes. A number of the electron emitters are activated to apply electron beams to the photoconductive target and the activated ones of the electron beam emitters are temporally changed over by an electron emitter selector circuit and a gate selector circuit. Signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

Abstract: An optically reading type photo-sensor for reading out an information signal of a signal light with a signal reading light includes a first photoconductor (101) and a second photoconductor (102) interposed between two electrodes (104 and 105); an intermediate region (103) disposed between those two photoconductors for storing and recombining carriers; and an optical source (107) for emitting a signal reading light for uninformalizing the potential in said second photoconductor (102), whereby a successive signal reading can be accomplished without any special preparations for the incidence of the signal light. The photo-sensor can be applied to a variety of imaging devices.

Abstract: Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

Abstract: A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.

Abstract: A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract: A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

Abstract: A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

Abstract: A light-detecting device for converting a light to an electrical signal utilizes a charge multiplication function and has a stable gain.The light-detecting device comprises a photo-electric conversion unit for converting a measurement light to an electrical signal, a power supply for applying an electric field to the photo-electric conversion unit, a light source for applying an incident light to the photo-electric conversion unit, signal detection means for detecting the charge converted by the photo-electric conversion unit based on the incident light from the light source, and signal hold means for holding the output signal of the signal detection means at a predetermined level.

Abstract: A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

Abstract: Within an electronic device having a plurality of circuit parts (such as a three-dimensional device), a light transmission system which transfers signals between the circuit parts by the use of light is provided.The light transmission system is formed of a light emitting source which emits light having a desired wavelength, a photoelectric conversion portion which absorbs the light and converts it into an electric signal, and a light traveling path which conveys the light emitted from the light emitting source to the photoelectric conversion portion.Further, each of the light emitting source, the light traveling path and the photoelectric conversion portion is formed of a superlattice structure in which a plurality of materials of unequal energy gaps are layered.