Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Abstract: A magnetic tunneling junction (MTJ) with a free layer that is less temperature sensitive and is reflow compatible at 260° C. The magnetic free layer may include various configurations, such as a single as-deposited crystalline magnetic layer or a composite free layer with more than one magnetic layers or a combination of composite and single magnetic layers. The layers of the composite magnetic free layer may include as-deposited crystalline magnetic free layers or a combination of as-deposited crystalline and as-deposited amorphous magnetic layers, with or without a spacer layer. An interface layer may be provided at an interface between the free layer and adjacent layer to apply tensile stress on the free layer in the direction perpendicular to the in-plane direction to enhance perpendicular magnetic anisotropy (PMA) of the free layer.

Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The spin transfer torque magnetic random access memory structure further includes a fixed layer over the base layer. The fixed layer includes anti-parallel layers including cobalt tungsten/platinum (CoW/Pt) bilayers, cobalt molybdenum/platinum (CoMo/Pt) bilayers, or bilayers including a combination of at least two materials selected from cobalt (Co), tungsten (W), molybdenum (Mo), platinum (Pt), palladium (Pd) or iridium (Ir). Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the fixed layer and a top electrode over the MTJ element.

Abstract: A storage device according the present technology includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer is configured to have magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer. The storage layer includes an outer circumferential portion and a center portion, is disposed to face the magnetization fixed layer with the intermediate layer sandwiched therebetween, and is configured to have a variable magnetization direction, the outer circumferential portion having magnetization in an orientation perpendicular to a film surface, the center portion being formed by being surrounded by the outer circumferential portion and having magnetization inclined from the orientation perpendicular to the film surface.

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, an integrated circuit includes a magnetic tunnel junction. The magnetic tunnel junction includes a fixed layer structure, a free layer structure, and a barrier layer disposed between the fixed layer structure and the free layer structure. The fixed layer structure includes a first magnetic layer and a second magnetic layer that is disposed between the first magnetic layer and the barrier layer. The first magnetic layer is configured to produce a first magnetic moment that substantially correlates to a second magnetic moment of the second magnetic layer as a function of temperature.

Abstract: A memory system is provided. The memory system includes a memory area configured to include a plurality of memory cells; a driving area configured to drive the memory cells; and a control area configured to supply a standby current to the memory area before the memory area records data; a plurality of word lines is crossing to a plurality of bit lines via the plurality of memory cells; and wherein each of the memory cells includes a memory layer, a magnetic fixed layer, an intermediate layer including a non-magnetic material provided between the memory layer and the magnetic fixed layer, a top electrode provided over the memory layer, a bottom electrode provided over the magnetic fixed layer.

Abstract: There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and in regard to the insulating layer and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film.

Abstract: A storage device according to one embodiment of the present technology includes a magnetization fixed layer, an intermediate layer, and a storage layer. The magnetization fixed layer is configured to have magnetization in an orientation perpendicular to a film surface and a constant magnetization direction. The intermediate layer includes a non-magnetic body and is disposed on the magnetization fixed layer. The storage layer includes an outer circumferential portion and a center portion, is disposed to face the magnetization fixed layer with the intermediate layer sandwiched therebetween, and is configured to have a variable magnetization direction, the outer circumferential portion having magnetization in an orientation perpendicular to a film surface, the center portion being formed by being surrounded by the outer circumferential portion and having magnetization inclined from the orientation perpendicular to the film surface.

Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.

Abstract: A bottom pinned perpendicular magnetic tunnel junction (pMTJ) with high TMR which can withstand high temperature back-end-of-line (BEOL) processing is disclosed. The pMTJ includes a composite spacer layer between a SAF layer and a reference layer of the fixed magnetic layer of the pMTJ. The composite spacer layer includes a first non-magnetic (NM) spacer layer, a magnetic (M) spacer layer disposed over the first NM spacer layer and a second NM spacer layer disposed over the M layer. The M layer is a magnetically continuous amorphous layer, which provides a good template for the reference layer.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, an integrated circuit includes a magnetic tunnel junction. The magnetic tunnel junction includes a fixed layer structure, a free layer structure, and a barrier layer disposed between the fixed layer structure and the free layer structure. The fixed layer structure includes a first magnetic layer and a second magnetic layer that is disposed between the first magnetic layer and the barrier layer. The first magnetic layer is configured to produce a first magnetic moment that substantially correlates to a second magnetic moment of the second magnetic layer as a function of temperature.

Abstract: According to some aspects, a layered structure comprises a memory layer exhibiting magnetization perpendicular to a face of the memory layer, the memory layer configured to change a direction of the magnetization in response to application of a current thereto, a magnetic layer exhibiting magnetization parallel or antiparallel to the direction of the magnetization of the memory layer and comprising a plurality of ferromagnetic layers, one or more non-magnetic layers, and an antiferromagnetic material, wherein a first non-magnetic layer of the one or more non-magnetic layers is situated between a first ferromagnetic layer of the plurality of ferromagnetic layers and a second ferromagnetic layer of the plurality of ferromagnetic layers, and wherein the antiferromagnetic material contacts at least one of the first non-magnetic layer and the first ferromagnetic layer, and an intermediate layer formed from a non-magnetic material located between the memory layer and the magnetic layer.

Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

Abstract: A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.