Abstract: A state evaluation apparatus of a secondary battery, the state evaluation apparatus includes at least one processor configured to perform a process including calculating internal resistance based on a measured voltage value and current value of the secondary battery and calculating internal temperature of the secondary battery and obtaining an amount of charge and discharge electric charge of the secondary battery based on the current value, or obtaining a charge state that indicates a charging rate of the secondary battery based on the current value and the voltage value, and calculating a battery state that indicates a state after deterioration of the secondary battery, based on the internal temperature and at least one of the amount of charge and discharge electric charge and the charge state.

Abstract: An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism which changes a lift amount of an intake valve. An oxygen sensor, which outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.

Abstract: A semiconductor device capable of suppressing a threshold shift and a manufacturing method of the semiconductor device. On a high dielectric constant insulating film, a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer is formed. Therefore, the diffusion of the metal elements from the high dielectric constant insulating film to the upper layer can be prevented. As a result, a reaction and bonding between the metal elements and a Si element in a gate electrode can be suppressed near a boundary between an insulating film and the gate electrode.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: The method of manufacturing the semiconductor device includes nitridizing a silicon substrate with ammonia while heating the silicon substrate, then heating the silicon substrate in an atmosphere containing nitrogen and oxygen to form a gate insulating film including a silicon-based insulating film containing nitrogen and oxygen, then annealing the silicon substrate in an oxygen atmosphere, and forming a gate electrode on the gate insulating film.

Abstract: A roof panel (31) is pre-set on the left and right side members (4) fixed to an underbody of a car. A roof panel spot welding station (7) includes a pair of frames (34) and two joisted-locating jigs (35, 36) bridging the frames. Each of the joisted-locating jigs is furnished with a clamp mechanism for holding the roof panel. The roof panel is located to the side members by the locating jigs, and spot-welded to the side members.

Abstract: An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism which changes a lift amount of an intake valve. An oxygen sensor, which outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.

Abstract: A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film 18 from being deprived of oxygen, while oxygen anneal is performed after a gate electrode layer 20 has been formed to thereby supplement oxygen. The silicon nitride film 16, which is the permeation preventing film, becomes a silicon oxide nitride film 17 without changing the film thickness, whereby characteristics deterioration of the High-k gate insulation film 18 due to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

Abstract: Each of a pair of side members (4) is located relative to an underbody (3) using two locators (16). Each locator is lowered by a lifter (15) and placed on a slide base (18). The slide base is movable along a slide guide (17) toward and away from a transfer conveyor (11).

Abstract: An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism which changes a lift amount of an intake valve. An oxygen sensor, which outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: Objectives of the present invention are to reduce the size and weight of side-member and roofjigs, and to simplify analysis of problems related to ease-of-assembly of vehicle body roofs and side-members. In a first step, using clamping jigs 11-1 through 11-4, a left and right pair of side-members 4 are positioned with respect to an underbody 3 (that was positioned at a prescribed position in a vehicle body assembly line 2), and welded in place. Continuing in a second step, after the clamping jigs 11-1 through 11-4 have been released, a roof 31 is placed on upper welding edges of the left and right side-members 4 while being positioned using suspension jigs 35 and 36, after which it is welded in place.

Abstract: Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.

Abstract: If it is determined that an engine has been started, an engine coolant temperature is detected. If the engine coolant temperature is equal to or lower than a threshold value, the catalyst quick warm-up control is started to retard ignition timing, and a signal indicating a command to increase an operate angle is transmitted to a VVLA controller. When a VVT hydraulic pressure is increased to a predetermined value, a signal indicating a command to decrease the operate angle is transmitted to the VVLA controller, and a signal indicating a command to advance open timing of an intake valve is transmitted to a VVT controller so that the open timing of the intake valve is not changed. If the engine coolant temperature is equal to or higher than a threshold value, the catalyst quick warm-up control ends, and the ignition timing is returned to normal timing.

Abstract: A semiconductor device capable of suppressing a threshold shift and a manufacturing method of the semiconductor device. On a high dielectric constant insulating film, a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer is formed. Therefore, the diffusion of the metal elements from the high dielectric constant insulating film to the upper layer can be prevented. As a result, a reaction and bonding between the metal elements and a Si element in a gate electrode can be suppressed near a boundary between an insulating film and the gate electrode.

Abstract: A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.

Abstract: An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism wich changes a lift amount of an intake valve. An oxygen sensor, wich outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.

Abstract: If it is determined that an engine has been started, an engine coolant temperature is detected. If the engine coolant temperature is equal to or lower than a threshold value, the catalyst quick warm-up control is started to retard ignition timing, and a signal indicating a command to increase an operate angle is transmitted to a VVLA controller. When a VVT hydraulic pressure is increased to a predetermined value, a signal indicating a command to decrease the operate angle is transmitted to the VVLA controller, and a signal indicating a command to advance open timing of an intake valve is transmitted to a VVT controller so that the open timing of the intake valve is not changed. If the engine coolant temperature is equal to or higher than a threshold value, the catalyst quick warm-up control ends, and the ignition timing is returned to normal timing.

Abstract: Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.