Patents by Inventor Kazuto Ikeda

Kazuto Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220360100
    Abstract: A device according to one embodiment includes a first battery to output alternating-current power for driving a motor and connected to a first main circuit that is connected to an inverter; a second battery connected to a second main circuit, having a storage capacity larger than it of the first battery, and having a permissible power output per unit storage capacity smaller than it of the first battery; a DC/DC converter to convert a voltage of the second main circuit to a predetermined voltage and output to the first main circuit; a control circuit to control charging and discharging operations of the first and the second battery and an operation of the DC/DC converter; a first terminal connected to a positive terminal of the first battery; and a second terminal connected to a negative terminal of the first battery.
    Type: Application
    Filed: July 21, 2022
    Publication date: November 10, 2022
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Koji TAKAZAWA, Kazuto KURODA, Akio NISHIMAKI, Yoshiyuki ISOZAKI, Kaoru KOIWA, Makoto MATSUOKA, Hiroshi KUSAJIMA, Motoshige IKEDA, Takuya IWASAKI
  • Patent number: 11451161
    Abstract: A power switcher includes a first normally-off transistor that switches between interrupting and not interrupting a current path between first and second electrodes according to a drive voltage input to a first control electrode, a second normally-on transistor cascode-connected to the first transistor and including a second control electrode to which the second electrode of the first transistor is connected, a control voltage generator that generates a control voltage in accordance with a voltage between the first and second electrodes of the first transistor, and a drive voltage generator that generates a drive voltage equal to or lower than a withstand voltage of the first transistor in accordance with the control voltage.
    Type: Grant
    Filed: September 8, 2020
    Date of Patent: September 20, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yusuke Hayashi, Kazuto Takao, Kentaro Ikeda
  • Publication number: 20140095092
    Abstract: A state evaluation apparatus of a secondary battery, the state evaluation apparatus includes at least one processor configured to perform a process including calculating internal resistance based on a measured voltage value and current value of the secondary battery and calculating internal temperature of the secondary battery and obtaining an amount of charge and discharge electric charge of the secondary battery based on the current value, or obtaining a charge state that indicates a charging rate of the secondary battery based on the current value and the voltage value, and calculating a battery state that indicates a state after deterioration of the secondary battery, based on the internal temperature and at least one of the amount of charge and discharge electric charge and the charge state.
    Type: Application
    Filed: September 20, 2013
    Publication date: April 3, 2014
    Applicant: FUJITSU LIMITED
    Inventors: Kazuto IKEDA, Masanori Kurita, Masatoshi Watanabe, Takashi Maruyama
  • Patent number: 8015967
    Abstract: An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism which changes a lift amount of an intake valve. An oxygen sensor, which outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.
    Type: Grant
    Filed: December 22, 2008
    Date of Patent: September 13, 2011
    Assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation
    Inventors: Hiroshi Morita, Kazuto Ikeda
  • Patent number: 7893508
    Abstract: A semiconductor device capable of suppressing a threshold shift and a manufacturing method of the semiconductor device. On a high dielectric constant insulating film, a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer is formed. Therefore, the diffusion of the metal elements from the high dielectric constant insulating film to the upper layer can be prevented. As a result, a reaction and bonding between the metal elements and a Si element in a gate electrode can be suppressed near a boundary between an insulating film and the gate electrode.
    Type: Grant
    Filed: September 11, 2006
    Date of Patent: February 22, 2011
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Tsunehisa Sakoda, Kazuto Ikeda
  • Patent number: 7838439
    Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.
    Type: Grant
    Filed: June 26, 2008
    Date of Patent: November 23, 2010
    Assignee: Semiconductor Technology Academic Research Center
    Inventors: Masaharu Oshima, Haruhiko Takahashi, Koji Usuda, Ziyuan Liu, Liu Guo-lin, Kazuto Ikeda, Masaki Yoshimaru
  • Publication number: 20100022080
    Abstract: The method of manufacturing the semiconductor device includes nitridizing a silicon substrate with ammonia while heating the silicon substrate, then heating the silicon substrate in an atmosphere containing nitrogen and oxygen to form a gate insulating film including a silicon-based insulating film containing nitrogen and oxygen, then annealing the silicon substrate in an oxygen atmosphere, and forming a gate electrode on the gate insulating film.
    Type: Application
    Filed: September 29, 2009
    Publication date: January 28, 2010
    Applicant: FUJITSU MICROELECTRONICS LIMITED
    Inventors: Sekikin Sho, Kazuto Ikeda
  • Patent number: 7608801
    Abstract: A roof panel (31) is pre-set on the left and right side members (4) fixed to an underbody of a car. A roof panel spot welding station (7) includes a pair of frames (34) and two joisted-locating jigs (35, 36) bridging the frames. Each of the joisted-locating jigs is furnished with a clamp mechanism for holding the roof panel. The roof panel is located to the side members by the locating jigs, and spot-welded to the side members.
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: October 27, 2009
    Assignee: Daihatsu Motor Co., Ltd.
    Inventors: Shinobu Inoue, Masaharu Saito, Akiyoshi Hazama, Yasuhiro Hosokawa, Takuma Arai, Isao Kita, Takuji Izutani, Kazuto Ikeda
  • Publication number: 20090118987
    Abstract: An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism which changes a lift amount of an intake valve. An oxygen sensor, which outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.
    Type: Application
    Filed: December 22, 2008
    Publication date: May 7, 2009
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Hiroshi Morita, Kazuto Ikeda
  • Patent number: 7521325
    Abstract: A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film 18 from being deprived of oxygen, while oxygen anneal is performed after a gate electrode layer 20 has been formed to thereby supplement oxygen. The silicon nitride film 16, which is the permeation preventing film, becomes a silicon oxide nitride film 17 without changing the film thickness, whereby characteristics deterioration of the High-k gate insulation film 18 due to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.
    Type: Grant
    Filed: July 28, 2005
    Date of Patent: April 21, 2009
    Assignee: Fujitsu Microelectronics Limited
    Inventors: Tsunehisa Sakoda, Masaomi Yamaguchi, Hiroshi Minakata, Yoshihiro Sugita, Kazuto Ikeda
  • Patent number: 7498541
    Abstract: Each of a pair of side members (4) is located relative to an underbody (3) using two locators (16). Each locator is lowered by a lifter (15) and placed on a slide base (18). The slide base is movable along a slide guide (17) toward and away from a transfer conveyor (11).
    Type: Grant
    Filed: October 17, 2003
    Date of Patent: March 3, 2009
    Assignee: Daihatsu Motor Co., Ltd.
    Inventors: Shinobu Inoue, Masaharu Saito, Akiyoshi Hazama, Yasuhiro Hosokawa, Takuma Arai, Isao Kita, Takuji Izutani, Kazuto Ikeda
  • Patent number: 7472697
    Abstract: An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism which changes a lift amount of an intake valve. An oxygen sensor, which outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.
    Type: Grant
    Filed: November 27, 2006
    Date of Patent: January 6, 2009
    Assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation
    Inventors: Hiroshi Morita, Kazuto Ikeda
  • Publication number: 20090004886
    Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.
    Type: Application
    Filed: June 26, 2008
    Publication date: January 1, 2009
    Inventors: Masaharu OSHIMA, Haruhiko TAKAHASHI, Koji USUDA, Ziyuan LIU, Liu GUO-LIN, Kazuto IKEDA, Masaki YOSHIMARU
  • Patent number: 7448529
    Abstract: Objectives of the present invention are to reduce the size and weight of side-member and roofjigs, and to simplify analysis of problems related to ease-of-assembly of vehicle body roofs and side-members. In a first step, using clamping jigs 11-1 through 11-4, a left and right pair of side-members 4 are positioned with respect to an underbody 3 (that was positioned at a prescribed position in a vehicle body assembly line 2), and welded in place. Continuing in a second step, after the clamping jigs 11-1 through 11-4 have been released, a roof 31 is placed on upper welding edges of the left and right side-members 4 while being positioned using suspension jigs 35 and 36, after which it is welded in place.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: November 11, 2008
    Assignee: Daihatsu Motor Co., Ltd.
    Inventors: Jyunji Motomi, Isao Kita, Tadao Nasu, Takuji Izutani, Kaname Akagi, Kazuto Ikeda, Hiromichi Arayama
  • Patent number: 7396715
    Abstract: Patterning is performed in such a manner that an end portion fabricated of a second gate insulating film partially overlaps an end portion fabricated of a first gate insulating film. Then, a surface recovery treatment is performed in the aforementioned state where the first and second gate insulating films partially overlap each other.
    Type: Grant
    Filed: July 27, 2005
    Date of Patent: July 8, 2008
    Assignee: Fujitsu Limited
    Inventor: Kazuto Ikeda
  • Patent number: 7331316
    Abstract: If it is determined that an engine has been started, an engine coolant temperature is detected. If the engine coolant temperature is equal to or lower than a threshold value, the catalyst quick warm-up control is started to retard ignition timing, and a signal indicating a command to increase an operate angle is transmitted to a VVLA controller. When a VVT hydraulic pressure is increased to a predetermined value, a signal indicating a command to decrease the operate angle is transmitted to the VVLA controller, and a signal indicating a command to advance open timing of an intake valve is transmitted to a VVT controller so that the open timing of the intake valve is not changed. If the engine coolant temperature is equal to or higher than a threshold value, the catalyst quick warm-up control ends, and the ignition timing is returned to normal timing.
    Type: Grant
    Filed: October 3, 2006
    Date of Patent: February 19, 2008
    Assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation
    Inventors: Kiyoo Hirose, Kazuto Ikeda, Hiroshi Morita
  • Publication number: 20070232004
    Abstract: A semiconductor device capable of suppressing a threshold shift and a manufacturing method of the semiconductor device. On a high dielectric constant insulating film, a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer is formed. Therefore, the diffusion of the metal elements from the high dielectric constant insulating film to the upper layer can be prevented. As a result, a reaction and bonding between the metal elements and a Si element in a gate electrode can be suppressed near a boundary between an insulating film and the gate electrode.
    Type: Application
    Filed: September 11, 2006
    Publication date: October 4, 2007
    Applicant: FUJITSU LIMITED
    Inventors: Tsunehisa Sakoda, Kazuto Ikeda
  • Patent number: 7265401
    Abstract: A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.
    Type: Grant
    Filed: June 9, 2005
    Date of Patent: September 4, 2007
    Assignee: Fujitsu Limited
    Inventors: Masaomi Yamaguchi, Hiroshi Minakata, Tsunehisa Sakoda, Kazuto Ikeda
  • Publication number: 20070125350
    Abstract: An air-fuel ratio control apparatus is applied to an internal combustion engine including a variable lift mechanism wich changes a lift amount of an intake valve. An oxygen sensor, wich outputs a signal indicating an oxygen concentration in exhaust gas, is provided downstream of an exhaust gas purification catalyst in an exhaust passage of the internal combustion engine. Air-fuel ratio control is performed to correct the fuel injection amount command value using the correction amount that is set based on the value output from the oxygen sensor. The relationship among the deviation of the correction amount from its reference value, the learned small lift value, the learned medium lift value, and the lift amount is learned. The learned deviation value is calculated based on the lift amount, using the learned relationship. Then, the fuel injection amount command value is corrected by the correction amount including the calculated learned deviation value.
    Type: Application
    Filed: November 27, 2006
    Publication date: June 7, 2007
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, DENSO CORPORATION
    Inventors: Hiroshi Morita, Kazuto Ikeda
  • Patent number: D858479
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: September 3, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Susumu Saga, Kazuto Ikeda, Yuuta Nakaya