Abstract: There is provided an element mapping unit, scanning transmission electron microscope, and element mapping method that enable to acquire an element mapping image very easily. On the scanning transmission electron microscope, the electron beam transmitted through an object to be analyzed enters into the element mapping unit. The electron beam is analyzed of its energy into spectrum by an electron spectrometer and an electron energy loss spectrum is acquired. Because the acceleration voltage data for each element and window data for 2-window method, 3-window method or contrast tuning method are already stored in a database and accordingly the spectrum measurement is carried out immediately even when an element to be analyzed is changed to another, the operator can confirm a two-dimensional element distribution map immediately.

Abstract: A standard sample for transmission electron microscopy (TEM) elemental mapping and a TEM elemental mapping method using the same are provided. The standard sample includes a substrate; a first crystalline thin film containing heavy atoms formed on the substrate; a first amorphous thin film having oxides or nitrides containing light atoms and having a thickness of 1-5 nm or 6-10 nm formed on the first crystalline thin film; a second crystalline thin film containing heavy atoms formed on the first amorphous thin film. The standard sample can be used to correct TEM, EDS and EELS mapping results of a multi-layered nanometer-sized thin film and to optimize mapping conditions.

Abstract: An electron microscope is provided, which enables an observation with high resolution. The electron microscope is able to detect the deviation of an electron beam relative to the opening of a slit quantitatively, thereby shifting the electron beam accurately to the center of the opening of slit so as to execute energy selection. The electron microscope has an energy filter control unit for adjusting a relative position between an electron beam and a slit by shifting the position of electron beam based on a signal delivered by an energy filter electron beam detector. Also a method for controlling an energy filter is provided, which includes the steps of shifting the position of an electron beam, determining the position of electron beam and letting the electron beam pass through the center of an opening of the slit by controlling the position of slit or position of electron beam.

Abstract: The present invention provides an ultimate analyzer which displays an element distribution image of an object with high contrast and high accuracy. A scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer is also provided. The ultimate analyzer comprises a scattered electron beam detector for detecting an electron beam scattered by an object; an electron spectrometer for energy dispersing an electron beam transmitted through the object; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector.

Abstract: A scanning transmission electron microscope has an electron beam energy analyzer (energy filter) to observe electron beam energy loss spectra and element distribution images. This electron microscope further includes a deflection coil provided on the upstream side of a magnetic sector to correct for the electron beam path in a plane normal to the optical axis and make the electron beam incident to the energy filter, a deflection coil for correcting for the electron beam path in the energy axis direction of an energy dispersion surface formed by the magnetic sector, and a control unit for controlling the exciting conditions of the deflection coils.

Abstract: An electron microscope is provided, which enables an observation with high resolution. The electron microscope is able to detect the deviation of an electron beam relative to the opening of a slit quantitatively, thereby shifting the electron beam accurately to the center of the opening of slit so as to execute energy selection. The electron microscope has an energy filter control unit for adjusting a relative position between an electron beam and a slit by shifting the position of electron beam based on a signal delivered by an energy filter electron beam detector. Also a method for controlling an energy filter is provided, which includes the steps of shifting the position of an electron beam, determining the position of electron beam and letting the electron beam pass through the center of an opening of the slit by controlling the position of slit or position of electron beam.

Abstract: An electron microscope is provided, which enables an observation with high resolution. The electron microscope is able to detect the deviation of an electron beam relative to the opening of a slit quantitatively, thereby shifting the electron beam accurately to the center of the opening of slit so as to execute energy selection. The electron microscope has an energy filter control unit for adjusting a relative position between an electron beam and a slit by shifting the position of electron beam based on a signal delivered by an energy filter electron beam detector. Also a method for controlling an energy filter is provided, which includes the steps of shifting the position of an electron beam, determining the position of electron beam and letting the electron beam pass through the center of an opening of the slit by controlling the position of slit or position of electron beam.

Abstract: An object of the invention is to provide a method and apparatus for observing inside structures and a specimen holder, wherein aging degradation of a good sample to a bad sample can be tracked in the same field of view, using the same specimen in order to determine the mechanism of failure. The present invention is a method for observing inside structures. The method comprises irradiating a specimen with a corpuscular beam generated from a corpuscular beam source, detecting transmitted particles transmitted by the specimen, applying a voltage to a portion of the specimen, and observing of a detection status of the transmitted particles in the voltage-applied portion as needed.

Abstract: There are provided an element distribution observing method and an element distribution observing apparatus under utilization of core-loss electrons capable of restricting artifact caused by either a thickness or density of a specimen, or an occurrence of the artifact caused by a diffraction contrast. Electron beam intensities in a total three different energy-loss areas of two energy-loss areas not containing any core-loss electrons and one energy-loss area are calculated to attain an element distribution on the basis of the corresponding three energy-loss areas and an electron beam intensity.

Abstract: A scanning transmission electron microscope has an electron beam energy analyzer (energy filter) to observe electron beam energy loss spectra and element distribution images. This electron microscope further includes a deflection coil provided on the upstream side of a magnetic prism to correct for the electron beam path in a plane normal to the optical axis and make the electron beam incident to the energy filter, a deflection coil for correcting for the electron beam path in the energy axis direction of an energy dispersion surface formed by the magnetic prism, and a control unit for controlling the exciting conditions of the deflection coils.

Abstract: An electron beam detector detects a peak of a spectrum, and when a peak position is deviated from a reference position on the electron beam detector, a controller for controlling an electron beam position on the electron beam detector is used to correct a deviation. An electron energy loss spectrum is measured while controlling correction a deviation between an electron beam position on a specimen, and a peak position of the spectrum, and a spectrum measuring with the electron beam detector.

Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer. The present invention exists in an ultimate analyzer comprising a scattered electron beam detector for detecting an electron beam scattered by an object to be analyzed; an electron spectrometer for energy dispersing an electron beam transmitted through the object to be analyzed; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements of the object to be analyzed based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector.

Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer. The present invention exists in an ultimate analyzer comprising a scattered electron beam detector for detecting an electron beam scattered by an object to be analyzed; an electron spectrometer for energy dispersing an electron beam transmitted through the object to be analyzed; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements of the object to be analyzed based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector.

Abstract: An electron microscope is provided, which enables an observation with high resolution. The electron microscope is able to detect the deviation of an electron beam relative to the opening of a slit quantitatively, thereby shifting the electron beam accurately to the center of the opening of slit so as to execute energy selection. The electron microscope has an energy filter control unit for adjusting a relative position between an electron beam and a slit by shifting the position of electron beam based on a signal delivered by an energy filter electron beam detector. Also a method for controlling an energy filter is provided, which includes the steps of shifting the position of an electron beam, determining the position of electron beam and letting the electron beam pass through the center of an opening of the slit by controlling the position of slit or position of electron beam.

Abstract: An electron beam detector detects a peak of a spectrum, and when a peak position is deviated from a reference position on the electron beam detector, a controller for controlling an electron beam position on the electron beam detector is used to correct a deviation. An electron energy loss spectrum is measured while controlling correction a deviation between an electron beam position on a specimen, and a peak position of the spectrum, and a spectrum measuring with the electron beam detector.

Abstract: There are provided an element distribution observing method and an element distribution observing apparatus under utilization of core-loss electrons capable of restricting artifact caused by either a thickness or density of a specimen, or an occurrence of the artifact caused by a diffraction contrast. Electron beam intensities in a total three different energy-loss areas of two energy-loss areas not containing any core-loss electrons and one energy-loss area are calculated to attain an element distribution on the basis of the corresponding three energy-loss areas and an electron beam intensity.

Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer. The present invention exists in an ultimate analyzer comprising a scattered electron beam detector for detecting an electron beam scattered by an object to be analyzed; an electron spectrometer for energy dispersing an electron beam transmitted through the object to be analyzed; an electron beam detector for detecting said dispersed electron beam; and a control unit for analyzing elements of the object to be analyzed based on an output signal of the electron beam detected by the electron beam detector and an output signal of the electron beam detected by the scattered electron beam detector.

Abstract: An object of the present invention is to provide an ultimate analyzer which can display an element distribution image of an object to be analyzed with high contrast to determine the positions of the element distribution with high accuracy, and a scanning transmission electron microscope and a method of analyzing elements using the ultimate analyzer.

Abstract: An electron beam detector detects a peak of a spectrum, and when a peak position is deviated from a reference position on the electron beam detector, a controller for controlling an electron beam position on the electron beam detector is used to correct a deviation. An electron energy loss spectrum is measured while controlling correction a deviation between an electron beam position on a specimen, and a peak position of the spectrum, and a spectrum measuring with the electron beam detector.

Abstract: A silicon substrate is etched by dipping it in a NH.sub.4 F solution while charging it with a potential more negative than an open-circuit potential. The NH.sub.4 F solution preferably has NH.sub.4 F concentration of 10M or less. The potential applied to the silicon substrate is controlled within the range of from the open-circuit potential to a more negative potential by -1.5 V vs. SCE. Since the etched silicon substrate has flatness in atomic order, it is suitable for the precise fabrications to manufacture high-density ir high-functional semiconductor devices.