Abstract: A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: wherein Z represents nitrogen atom, C—F or the like; R1 represents a C1-C3 alkyl group; Y represents oxygen atom or N—R7; R2, R3, R4, R5, R6 and R7 each independently represents hydrogen atom, a C1-C6 alkyl group, or a group represented by the formula (II): which is used for preventive and/or therapeutic treatment of a disease caused by tau protein kinase 1 hyperactivity such as a neurodegenerative diseases (e.g. Alzheimer disease).

Abstract: An alkali-niobate-based piezoelectric thin film element includes a substrate, a lower electrode film on the substrate, a piezoelectric thin film on the lower electrode film, and an upper electrode film on the piezoelectric thin film. The piezoelectric thin film is made of an alkali-niobate-based piezoelectric material represented by the formula (NaxKyLiz)NbO3, where 0?x?1, 0?y?1, 0?z?0.2, and x+y+z=1. The piezoelectric thin film has an element pattern and contains a metal element in a higher concentration near the upper electrode film than near the lower electrode film. The average concentration of the metal element is 5×1017 atoms/cm3 or less in a region within ±15% of the thickness of the piezoelectric thin film from a position corresponding to half the thickness of the piezoelectric thin film.

Abstract: A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: wherein Z represents nitrogen atom or C—X; X represents hydrogen atom or fluorine atom; R1 is hydrogen atom or a C1-C3 alkyl group; L represents single bond or a C1-C6 alkylene group which may be substituted; Y represents single bond, sulfur atom, oxygen atom, NH, or the like; R2 represents hydrogen atom or a cyclic group which may be substituted, which is used for preventive and/or therapeutic treatment of a disease caused by abnormal activity of tau protein kinase 1 such as a neurodegenerative diseases (e.g. Alzheimer disease).

Abstract: There is provided a method for manufacturing a niobate-system ferroelectric thin film device, including: a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent.

Abstract: A pyrimidone derivative represented by general formula (I) or a pharmaceutically acceptable salt thereof: wherein X represents hydrogen atom and Y represents hydroxyl group, or X represents fluorine atom and Y represents hydrogen atom; R1 represents a C1-6 alkyl group; R2 represents a morpholin-4-yl group which may be substituted, or the like, which is used for preventive and/or therapeutic treatment of a disease caused by tau protein kinase 1 hyperactivity such as a neurodegenerative diseases (e.g. Alzheimer disease).

Abstract: There is provided a piezoelectric film having an alkali niobate-based perovskite structure expressed by a general formula (NaxKyLiz)NbO3(0?x?1, 0?y?1, 0?z?0.2, x+y+z=1), wherein the alkali niobate has a crystal structure of a pseudo-cubic crystal, a tetragonal crystal, an orthorhombic crystal, a monoclinic crystal, a rhombohedral crystal, or has a crystal structure of coexistence of them, and when total of K—O bonding and K-Metal bonding is set as 100% in a binding state around K-atom of the alkali niobate, a K—O bonding ratio is 46.5% or more and a K-Metal bonding ratio is 53.5% or less, wherein the Metal indicates a metal atom included in the piezoelectric film.

Abstract: Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields. The piezoelectric thin film element (1) comprises: a substrate (10), and a piezoelectric thin film (40) which is arranged on the substrate (10), has at least one crystal structure represented by general formula (NaxKyLiz)NbO3 (0?x?1, 0?y?1, 0?z?0.2, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass.

Abstract: A device for calculating a position of an actuator, the actuator including a movement mechanism configured to move in one direction in proportion to a control signal generated for each minimum movement amount ?M and a movement amount detection sensor configured to detect a movement amount of the movement mechanism in a minimum resolution ?S, where A=?S/?M?2, and the device includes a position calculation unit configured to calculating a position SA of the movement mechanism at a target position from the control signal at a time point T1, at which the sensor signal becomes (S0+m×?S) or (S0?m×?S), where m is a natural number of 1 or more, the control signal at the target position of the movement mechanism is denoted by M0, and the sensor signal is denoted by S0.

Abstract: A piezoelectric thin-film element includes a substrate, a lower electrode layer formed on the substrate, a piezoelectric thin-film layer that is formed on the lower electrode layer and includes potassium sodium niobate having a perovskite structure represented by the composition formula of (K1-xNax)NbO3 (0.4?x?0.7), and an upper electrode layer formed on the piezoelectric thin-film layer. The piezoelectric thin-film layer is formed such that a value of (Ec?+Ec+)/2 is not less than 10.8 kV/cm and a value of (Pr?+Pr+)/2 is not more than ?2.4 ?C/cm2 where Ec? and Ec+ are intersection points of a polarization-electric field hysteresis loop and the x-axis indicating an electric field and Pr? and Pr+ are intersection points of the polarization-electric field hysteresis loop and the y-axis indicating polarization.

Abstract: A piezoelectric thin-film multilayer body includes a substrate, an adhesive layer on the substrate, a lower electrode layer on the adhesive layer, and a lead-free piezoelectric thin-film layer on the lower electrode layer. The lead-free piezoelectric thin-film layer is composed of lithium potassium sodium niobate (composition formula (NaxKyLiz)NbO3, 0<x<1, 0<y<1, 0?z?1, x+y+z=1). The maximum height Rz of a roughness of an adhesive-layer-facing surface of the substrate is 2 nm or less. The adhesive layer is composed of a non-crystalline oxide of a Group 4 element or a non-crystalline oxide of a Group 5 element. The adhesive layer has a thickness of 1 nm or more and 2 nm or less and is equal to or more than the maximum height Rz of the roughness of the surface of the substrate.

Abstract: A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric film represented by a general formula of (NaxKyLiz)NbO3 (0<x?1, 0<y?1, 0?x?0.2, x+y+z=1) and an upper electrode layer formed on the substrate. The piezoelectric film has a crystal structure of pseudo-cubic crystal, tetragonal crystal, orthorhombic crystal, monoclinic crystal or rhombohedral crystal, or has a state that at least two of the crystal structures coexist. A difference between the maximum value and the minimum value of an energy of Na-K absorption edge measured by an electron energy loss spectroscopy or an X-ray-absorption fine-structure spectroscopy in a direction of the film thickness of the piezoelectric film is not more than 0.8 eV.

Abstract: In a local softening point measuring apparatus and thermal conductivity measuring apparatus using a probe microscope as a base, environment of the prob˜ and a sample surface is set to 1/100 atmospheric pressure (103 Pa) or lower. Otherwise, a side surface of the probe is coated with a thermal insulation material having a thickness that enables thermal dissipation to be reduced to 1/100 or lower, to thereby reduce the thermal dissipation from the side surface of the probe, and exchange heat substantially only at the contacting portion between the probe and the sample surface.

Abstract: A compound represented by the formula (I), an optically active isomer thereof, or a pharmaceutical acceptable salt thereof: wherein each R1 represents hydrogen atom or the like; X represents oxygen atom or the like; A represents a C3-C7 cycloalkyl group, a C6-C10 aryl group or a heterocyclic group; R6 represents a halogen atom or the like; s represents 0 or an integer of 1 to 5; Q represents a pyridine ring which may be substituted or pyrimidine ring; and R2 represents hydrogen atom or the like, which is used for preventive and/or therapeutic treatment of a disease caused by abnormal activity of tau protein kinase 1 such as a neurodegenerative diseases (e.g. Alzheimer disease).

Abstract: A piezoelectric film element is provided, which is capable of improving piezoelectric properties, having on a substrate at least a lower electrode, a lead-free piezoelectric film, and an upper electrode, wherein at least the lower electrode out of the lower electrode and the upper electrode has a crystal structure of a cubic crystal system, a tetragonal crystal system, an orthorhombic crystal system, a hexagonal crystal system, a monoclinic crystal system, a triclinic crystal system, a trigonal crystal system, or has a composition in which one of these crystals exists or two or more of them coexist, and crystal axes of the crystal structure are preferentially oriented to a specific axis smaller than or equal to two axes of these crystals, and a ratio c/a? is set in a range of 0.992 or more and 0.

Abstract: A compound represented by the formula (I), an optically active isomer thereof, or a pharmaceutical acceptable salt thereof: wherein R2 represents a hydrogen or the like; R3 represents methyl group or the like; R20 represents a halogen atom or the like; q represents an integer of 0 to 3; Z represent nitrogen atom, CH, or the like; R4 represents hydrogen or the like; R5 represents hydrogen or the like; R6 represents a substituted alkyloxy and the like; p represents an integer of 0 to 3; X represents bond, CH2, oxygen atom, NH, or the like; any one or more of R5 and R6, R5 and R4, R6 and R4, X and R5, X and R4, X and R6, and R6 and R6 may combine to each other to form a ring, which is used for preventive and/or therapeutic treatment of a disease caused by tau protein kinase 1 hyperactivity such as a neurodegenerative diseases (e.g. Alzheimer disease).

Abstract: There is provided a piezoelectric film-attached substrate, including a piezoelectric film having a specific thickness, wherein a reflection spectrum shows a relation between a light obtained in such a way that the surface of the piezoelectric film is irradiated with an irradiation light having a specific wavelength and the irradiation light is reflected on the surface of the piezoelectric film, and a light obtained in such a way that the irradiation light is transmitted through the piezoelectric film and is reflected on the surface of the lower electrode, which is the reflection spectrum at least at one point on a center part and an outer peripheral part of the piezoelectric film, and such a reflection spectrum has at least one of the maximum value and the minimum value respectively, wherein the reflectance at least in one maximum value is 0.4 or more.

Abstract: A compound represented by the formula (I) or a pharmaceutically acceptable salt thereof: which is used for preventive and/or therapeutic treatment of a disease caused by abnormal activity of tau protein kinase 1 such as a neurodegenerative diseases (e.g. Alzheimer disease).

Abstract: To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1-xNax)yNbO3 is in a range of 0.4?x?0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.

Abstract: To provide a piezoelectric thin film element comprising: a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein composition ratios x, y of the piezoelectric thin film expressed by (K1-xNax)yNbO3 are in a range of 0.4?x?0.7 and 0.7?y?0.94.

Abstract: There is provided a piezoelectric thin film element, comprising: a substrate 1; and a piezoelectric thin film 3 having an alkali niobium oxide-based perovskite structure represented by a composition formula (K1-xNax)yNbO3 provided on the substrate 1, wherein a carbon concentration of the piezoelectric thin film 3 is 2×1019/cm3 or less, or a hydrogen concentration of the piezoelectric thin film 3 is 4×1019/cm3 or less.