Abstract: A semiconductor device configured to drive a display panel in a display period, and perform touch sensing on the display panel in a touch sensing period after the display period. In a last horizontal sync period of the display period, the semiconductor device drives a first source line with a drive voltage of a first polarity, and a second source line with a drive voltage of a second polarity different from the first polarity. is the semiconductor is configured to output a first dummy pulse having first polarity and a voltage level based on the second display data to the first source line in a transition period between the display period and the touch sensing period.

Abstract: In a semiconductor device in which a reference voltage is generated by a reference voltage generation circuit, and the same reference voltage generated is used in a plurality of circuit units for the purpose of generating a voltage, a sampling and holding circuit of the reference voltage is provided in order to provide a standard voltage to the circuit units. A sampling and holding control circuit that controls the sampling and holding circuit instructs the sampling and holding circuit to perform a sampling operation of the reference voltage in case that the semiconductor device operates in a state where power supply noise of the reference voltage generation circuit falls within a predetermined range, and instructs the sampling and holding circuit to perform a holding operation of the reference voltage in case that the semiconductor device operates in a state where the power supply noise exceeds the predetermined range.

Abstract: The semiconductor device is intended for connection with an in-cell type display touch panel having a plurality of common electrodes, a reference voltage for display is applied to the common electrodes in a display drive period, and the common electrodes serve as sensor electrodes in a touch detection period. The semiconductor device includes a DC level shift circuit operable to shift the DC level of a toggle signal output by a toggle drive circuit to the reference voltage. The semiconductor device supplies the reference voltage to the common electrodes of the display touch panel in the display drive period, and performs a guarding action in which at least a part of the plurality of common electrodes is supplied with a toggle signal shifted in DC level in the touch detection period.

Abstract: A semiconductor device configured to drive a display panel in a display period, and perform touch sensing on the display panel in a touch sensing period after the display period. In a last horizontal sync period of the display period, the semiconductor device drives a first source line with a drive voltage of a first polarity, and a second source line with a drive voltage of a second polarity different from the first polarity. is the semiconductor is configured to output a first dummy pulse having first polarity and a voltage level based on the second display data to the first source line in a transition period between the display period and the touch sensing period.

Abstract: The semiconductor device is intended for connection with an in-cell type display touch panel having a plurality of common electrodes, a reference voltage for display is applied to the common electrodes in a display drive period, and the common electrodes serve as sensor electrodes in a touch detection period. The semiconductor device includes a DC level shift circuit operable to shift the DC level of a toggle signal output by a toggle drive circuit to the reference voltage. The semiconductor device supplies the reference voltage to the common electrodes of the display touch panel in the display drive period, and performs a guarding action in which at least a part of the plurality of common electrodes is supplied with a toggle signal shifted in DC level in the touch detection period.

Abstract: In a semiconductor device in which a reference voltage is generated by a reference voltage generation circuit, and the same reference voltage generated is used in a plurality of circuit units for the purpose of generating a voltage, a sampling and holding circuit of the reference voltage is provided in order to provide a standard voltage to the circuit units. A sampling and holding control circuit that controls the sampling and holding circuit instructs the sampling and holding circuit to perform a sampling operation of the reference voltage in case that the semiconductor device operates in a state where power supply noise of the reference voltage generation circuit falls within a predetermined range, and instructs the sampling and holding circuit to perform a holding operation of the reference voltage in case that the semiconductor device operates in a state where the power supply noise exceeds the predetermined range.

Abstract: In a semiconductor device in which a reference voltage is generated by a reference voltage generation circuit, and the same reference voltage generated is used in a plurality of circuit units for the purpose of generating a voltage, a sampling and holding circuit of the reference voltage is provided in order to provide a standard voltage to the circuit units. A sampling and holding control circuit that controls the sampling and holding circuit instructs the sampling and holding circuit to perform a sampling operation of the reference voltage in case that the semiconductor device operates in a state where power supply noise of the reference voltage generation circuit falls within a predetermined range, and instructs the sampling and holding circuit to perform a holding operation of the reference voltage in case that the semiconductor device operates in a state where the power supply noise exceeds the predetermined range.

Abstract: There is provided an electric motor suitable for a vacuum cleaner, which achieves high output and high efficiency in operation at a rotation of 30,000 rpm or more, required for a motor for a vacuum cleaner, as well as enables its life to be extended. The electric motor includes a rotor core and a commutator that are coaxially fixed to a rotating shaft, and a stator core arranged around the rotor core. The rotor core and the stator core comprises a plurality of rotor core elements and a plurality of stator core elements, each formed of a thin electromagnetic steel plate having a thickness of less than 0.3 mm, are stacked and fixed in layers. Each of the plurality of rotor core elements has a diameter including a tip of each of teeth, within a range of approximately 35 mm to 40 mm, and each of the teeth has a length in a longitudinal direction that is one-third or more of a radius of the rotor core element.

Abstract: Provided is a touch sensor panel which can increase the detection sensitivity of a touch relatively readily. The touch sensor panel controller supplies drive electrodes of a touch sensor panel with a high-voltage AC drive signal with its low level set to a negative voltage and drives them. The time of change of a drive waveform supplied to the drive electrodes of the touch sensor panel is shifted relative to the time of change of a drive waveform supplied to a display scan electrode. The touch sensor panel controller uses a charge pump in synchronization with clock signals of more than one phase to produce a high drive voltage to activate drive electrodes of the touch sensor panel, and the clock signals of more than one phase are initialized each time the drive electrode is subjected to AC pulse driving.

Abstract: In a semiconductor device in which a reference voltage is generated by a reference voltage generation circuit, and the same reference voltage generated is used in a plurality of circuit units for the purpose of generating a voltage, a sampling and holding circuit of the reference voltage is provided in order to provide a standard voltage to the circuit units. A sampling and holding control circuit that controls the sampling and holding circuit instructs the sampling and holding circuit to perform a sampling operation of the reference voltage in case that the semiconductor device operates in a state where power supply noise of the reference voltage generation circuit falls within a predetermined range, and instructs the sampling and holding circuit to perform a holding operation of the reference voltage in case that the semiconductor device operates in a state where the power supply noise exceeds the predetermined range.

Abstract: Provided is a touch sensor panel which can increase the detection sensitivity of a touch relatively readily. The touch sensor panel controller supplies drive electrodes of a touch sensor panel with a high-voltage AC drive signal with its low level set to a negative voltage and drives them. The time of change of a drive waveform supplied to the drive electrodes of the touch sensor panel is shifted relative to the time of change of a drive waveform supplied to a display scan electrode. The touch sensor panel controller uses a charge pump in synchronization with clock signals of more than one phase to produce a high drive voltage to activate drive electrodes of the touch sensor panel, and the clock signals of more than one phase are initialized each time the drive electrode is subjected to AC pulse driving.

Abstract: A semiconductor circuit with the reduced scale of circuitry and a semiconductor integrated circuit chip which is obtained by integrating the semiconductor circuit and enables chip size reduction are provided. For this purpose, a two-decode method is used. The method uses: a pre-decode circuit comprising a first decoder of the preceding stage which decodes an arbitrary bit of an address signal of eight bits and a second decoder of the preceding stage which decodes the remaining bits; level conversion circuits which shift the output of the pre-decode circuit; and post-decode circuits which decode the decode outputs of the decoders in the pre-decode circuit, level-converted through the level conversion circuits.

Abstract: A semiconductor circuit with the reduced scale of circuitry and a semiconductor integrated circuit chip which is obtained by integrating the semiconductor circuit and enables chip size reduction are provided. For this purpose, a two-decode method is used. The method uses: a pre-decode circuit comprising a first decoder of the preceding stage which decodes an arbitrary bit of an address signal of eight bits and a second decoder of the preceding stage which decodes the remaining bits; level conversion circuits which shift the output of the pre-decode circuit; and post-decode circuits which decode the decode outputs of the decoders in the pre-decode circuit, level-converted through the level conversion circuits.

Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.

Abstract: By implementing reduction in power of common electrode voltages applied from a power source of a liquid crystal drive device to common electrode interconnects of a liquid crystal display panel, respectively, reduction in power consumption of the liquid crystal display panel as a whole is attained. A VCOM operation waveform in a charging process from a second voltage VCOML to a first voltage VCOMH shows that a charging current Icha represents the sum of a charging current from VCOML to a reference voltage VCI, Icha1=Cp (VCI?VCOML)/?t, and a charging current from the reference voltage VCI to the first voltage VCOMH, Icha2=Cp (VCOMH?VCI)/?t. Accordingly, power consumed by Icha1 is the reference voltage VCI×Icha1, and power consumed by Icha2 is VCI×Icha2×2.

Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.

Abstract: By implementing reduction in power of common electrode voltages applied from a power source of a liquid crystal drive device to common electrode interconnects of a liquid crystal display panel, respectively, reduction in power consumption of the liquid crystal display panel as a whole is attained. A VCOM operation waveform in a charging process from a second voltage VCOML to a first voltage VCOMH shows that a charging current Icha represents the sum of a charging current from VCOML to a reference voltage VCI, Icha1=Cp(VCI-VCOML)/?t, and a charging current from the reference voltage VCI to the first voltage VCOMH, Icha2=Cp(VCOMH?VCI)/?t. Accordingly, power consumed by Icha1 is the reference voltage VCI×Icha1, and power consumed by Icha2 is VCI×Icha2×2.

Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.

Abstract: By implementing reduction in power of common electrode voltages applied from a power source of a liquid crystal drive device to common electrode interconnects of a liquid crystal display panel, respectively, reduction in power consumption of the liquid crystal display panel as a whole is attained. A VCOM operation waveform in a charging process from a second voltage VCOML to a first voltage VCOMH shows that a charging current Icha represents the sum of a charging current from VCOML to a reference voltage VCI, Icha1=Cp (VCI?VCOML)/?t, and a charging current from the reference voltage VCI to the first voltage VCOMH, Icha2=Cp (VCOMH?VCI)/?t. Accordingly, power consumed by Icha1 is the reference voltage VCI×Icha1, and power consumed by Icha2 is VCI×Icha2×2.

Abstract: There is to be provided a liquid crystal drive controller with a built-in power supply circuit wherein latch-up is made difficult to arise even if one amplitude level of the segment line drive voltage is set to the ground potential and the levels of other liquid crystal drive voltages are determined accordingly. A semiconductor integrated circuit with a built-in power supply circuit, wherein a negative voltage generated in a power supply circuit is applied to a substrate or a well region as a bias voltage, is provided with a switch for temporarily applying the ground potential to the substrate or well region to be biased with the negative voltage at the time of starting up the power supply circuit.